A5101730315- Thin-Film Transistor Technologies
- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- ZnO doping and properties
- Semiconductor materials and devices
- Conducting polymers and applications
- Silicon Nanostructures and Photoluminescence
- Transition Metal Oxide Nanomaterials
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Luminescence and Fluorescent Materials
- Advanced battery technologies research
- Chalcogenide Semiconductor Thin Films
- Scheduling and Optimization Algorithms
- Quantum Dots Synthesis And Properties
- Assembly Line Balancing Optimization
- Electrocatalysts for Energy Conversion
- Electrochemical Analysis and Applications
- Advancements in Battery Materials
- Pulsed Power Technology Applications
- Green IT and Sustainability
- Perovskite Materials and Applications
- Advanced Manufacturing and Logistics Optimization
- HVDC Systems and Fault Protection
- Electrostatic Discharge in Electronics
South China University of Technology
2012-2024
China Jiliang University
2023-2024
Institute of New Materials
2024
Beijing Institute of Optoelectronic Technology
2015-2024
University of Electronic Science and Technology of China
2005-2021
Guangzhou Electronic Technology (China)
2011-2021
National Engineering Research Center of Electromagnetic Radiation Control Materials
2017-2020
State Key Laboratory of Luminescent Materials and Devices
2013-2017
Infineon Technologies (Germany)
2014
Guangzhou Experimental Station
2014
This review reports on the recent development of fluorescent/phosphorescent hybrid white organic light-emitting diodes.
We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) with anodic AlOx gate dielectric on polyethylene naphthalate (PEN) substrate process temperature below 150 °C. The TFTs exhibit field-effect mobility of 12.87 cm2 V−1 s−1, subthreshold swing 0.20 V dec−1, and an Ion/Ioff ratio 109.
The bi-layered inorganic/organic of AMO + CYTOP has superior water vapor transmission rate as 1.05 × 10<sup>−6</sup> g m<sup>−2</sup> day<sup>−1</sup> at 60 °C and 100% R.H., the encapsulated OLEDs device produces no black spots under harsh environment 85 & 85% R.H. for 250 h.
A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the TLP-SBD that remarkably improves body characteristics while guarantees excellent fundamental performance of TMOS. In blocking state, P-base region, gate, P+ shield at bottom serve as TLP contact. Each assists in depleting drift region beneath Benefiting from self-assembled TLP, leakage...
The balance between electron and hole injection is critical for obtaining high efficiency in quantum dot light-emitting diodes (QLEDs).
Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression light-induced instability. A negligible photo-response and enhancement in negative gate bias stress under illumination (NBIS) were achieved PrIZO-TFTs. Meanwhile, PrIZO-TFTs showed reasonable characteristics high-field-effect mobility 26.3 cm2/V s, SS value 0.28 V/decade, Ion/ Ioff ratio 108. X-ray photoelectron...
Flexible WOLEDs with extremely high efficiency and color-stability are realized<italic>via</italic>the extraordinary combination of mechanical, electrical optical properties.
The effect of n-type interlayer in hybrid white organic light-emitting diodes (WOLEDs) has been systematically investigated by using various materials. A new finding, that the triplet energy rather than electron mobility or hole-blocking ability plays a more positive role performance WOLEDs, is demonstrated. Based on efficient bis[2-(2-hydroxyphenyl)-pyridine] beryllium employed to realize high-performance WOLED. resulting device (without n-doping technology) exhibits low voltages (i.e., 2.8...
Abstract A very-high color rendering index white organic light-emitting diode (WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m 2 . peak 90 relatively stable during wide range luminance were obtained. In addition, it demonstrated that the 4,4′,4″-tri(9-carbazoyl) triphenylamine host influenced strongly performance this WOLED. These results may be beneficial to design both material...
Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. find Ti/C S/D electrodes exhibits superior performance higher output current, lower threshold voltage, and effective electron mobility compared to that Mo/C electrodes. Transmittance microscopy (TEM) X-ray...
In this paper Al<sub>2</sub>O<sub>3</sub> films are prepared with a method of atomic layer deposition (ALD) as the thin film encapsulation technology for top-emitting organic light-emitting diodes (TE-OLED).
A novel solid state circuit breaker (SSCB), which uses the cathode-short MOS-controlled thyristor (CS-MCT) as main switch to achieve high power efficiency, is proposed for direct current (dc) microgrid protection. The SSCB features commutating with a one-shot triggering characteristic and compact size, makes realize simple tripping process easy integration. Furthermore, charges capacitor offers interruption capability before turned on. This avoids possible failure of under fault that occurs...
High-brightness and color-stable two-wavelength hybrid white organic light emitting diodes (HWOLEDs) with the configuration of indium tin oxide (ITO)/ N, N', N'-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD): tetrafluoro-tetracyanoqino dimethane (F4-TCNQ)/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB)/4,4-N,N-dicarbazolebiphenyl (CBP): iridium (III) diazine complexes (MPPZ)2Ir(acac)/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN): p-bis(p-N,N-di-phenyl-aminostyryl)benzene (DSA-ph)/...
In this study, thin-film transistors (TFTs) with amorphous indium–zinc oxide (IZO) channel were fabricated by plasma-enhanced atomic layer deposition (PEALD). By optimizing the cyclic ratio of laminated ZnO/In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O notation="LaTeX">$_{\text{3}}$</tex-math> , IZO-TFTs demonstrated a high field-effect mobility (...
Thin-film transistors (TFTs) based on indium-zinc oxide (IZO) active layer and anodic aluminum (Al2O3) gate dielectric were fabricated. The influence of source drain (S/D) contacts TFT performance was investigated by comparing IZO–TFTs with different S/D electrodes. Mo electrodes had higher output current lower threshold voltage, but poorer subthreshold swing effective electron mobility compared to that ITO By using x-ray photoelectron spectroscopy (XPS) depth profile analyzing method, it...
Organic light-emitting diodes (OLEDs) are essential for the development of future light sources and display technology. Here, we have investigated effects various electron transport layers such as Bebq2, Bepp2, BAlq, Alq3 TPBi in blue flourescent OLEDs. It is found that properties layer, including energy gap, hole blocking ability mobility, play critical roles determining device performance. Particularly, it more crucial than mobility terms current efficiency. With excellent great TPBi-based...
The electronic properties of amorphous indium-zinc-oxide (IZO) thin film transistors (TFTs) with back-channel-etch (BCE) structure was investigated. In the cyclic-transfer characteristics test, initial transfer curve BCE-type exhibited a significant hysteresis phenomenon under high-gate bias (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> ). However, in following cycles curves, significantly reduced, and curves nearly overlapped...
Low efficiency roll-off, stable color and highly efficient single-EML phosphorescent WOLEDs are realized.