A5031673753- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Plasma Diagnostics and Applications
- Particle accelerators and beam dynamics
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Advancements in Battery Materials
- Atomic and Molecular Physics
- Pulsed Power Technology Applications
- Metal and Thin Film Mechanics
- Urbanization and City Planning
- Gyrotron and Vacuum Electronics Research
- Privacy, Security, and Data Protection
- Fish Ecology and Management Studies
- Fish biology, ecology, and behavior
- Mobile Crowdsensing and Crowdsourcing
- Minerals Flotation and Separation Techniques
- China's Socioeconomic Reforms and Governance
- Tribology and Wear Analysis
- Fish Biology and Ecology Studies
- Radiation Therapy and Dosimetry
State Grid Corporation of China (China)
2024
Zhejiang University
2013-2023
University of Electronic Science and Technology of China
2011-2022
Anhui Normal University
2018-2021
Zhuhai Institute of Advanced Technology
2021
National Engineering Research Center of Electromagnetic Radiation Control Materials
2016-2020
Dalian University of Technology
2014-2018
Dalian University
2014-2018
Hainan University
2016-2017
TiNb 2 O 7 nanorods have been successfully fabricated by a sol–gel method with sodium dodecyl surfate (SDS) surfactant. X-ray diffraction indicates that the Ti Nb[Formula: see text]O[Formula: text]-type crystal structure. Scanning electron microscopy (SEM) and transmission (TEM) results show an average diameter of [Formula: text][Formula: text]100[Formula: text]nm length text]300[Formula: text]nm. As result such nanosizing effect, this new material exhibits advanced electrochemical...
In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) low dynamic ON-resistance (RON, D) AlGaN/GaN electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between gate drain electrodes. Instead of ion implantation thin AlGaN barrier layer, peak position vacancy distributions are far from two-dimensional gas (2DEG) channel case which effectively suppresses direct current (DC) static pulsed characteristic...
In this paper, we demonstrate a 570.0 MHz harmonically mode-locked all-polarization-maintaining Ho-doped fiber laser based on semiconductor saturable absorbed mirror. Firstly, the operates in 15.4 fundamental soliton regime, emitting 2051.5 nm, 1.62 ps pulse without Kelly sidebands. And then, stable 37th-order harmonic with maximum repetition rate up to at 2053nm is generated. Moreover, colorful rain behaviors are also discussed.
In this brief, an AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with pulsed laser deposited AlN interface protection layer (IPL) and trench termination (T <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) structure is experimentally theoretically investigated. The IPL could effectively improve the quality reduce trap density, which verified by frequency-dependent C-V measurement conductance method....
Urbanization in Central and Western China has attracted increasing attention the advent of new-type urbanization age 'Global Urbanism'. Although land is at epicenter Chinese urbanization, its process driving forces counties beyond Eastern coastal areas are less known. This paper therefore seeks to investigate spatial expansion Feixi county, a relatively advanced county neighboring Hefei city proper Anhui province China. Based on land-use change survey data, remote sensing interpretation...
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with theory used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The displays reliable reproducible a current density 3 A/cm(2) at the reverse bias -1 V. absence negative differential...
Both the ion emission from anode surface and electron cathode may occur in magnetically insulated transmission line (MITL) with a very high pulsed power large current density. A model for MITL both flow is developed. In this model, physical quantities (such as space-charge sheath thicknesses currents) are theoretically analyzed, specific expression voltage on by terms of currents derived. Furthermore, particle-in-cell simulations carried out to verify theoretical results.
A novel thin SOI lateral insulated gate bipolar transistor (LIGBT) with low on-state voltage drop ( Von) and latch-up immunity is proposed. The device features the multi-segmented trench gates in z-direction, named MST LIGBT. form multi conduction channels along sidewalls, which increases channel density so as to reduce Von increase saturation current. Furthermore, hinder holes from being extracted by cathode x- z- direction, attracts a large number of electrons injected cathode, therefore...
An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) electron (2DEG) are formed at GaN-top/AlGaN interface, respectively. At off-state, 2DEH 2DHG partially depleted then completely disappear. There remain fixed positive negative polarization charges, forming junction. Therefore, a flat electric field in drift region high breakdown voltage (BV) obtained. Moreover,...
Interface enhanced magnetism attracts much attention due to its potential use in exploring novel structure devices. Nevertheless, the magnetic behavior at interfaces has not been quantitatively determined. In this study, abnormal moment reduction is observed La 0.7 Sr 0.3 MnO 3 (LSMO)/BiFeO (BFO) superlattices, which induced by ferromagnetic (FM)/antiferromagnetic (AFM) coupling interface. With reduced repetition of superlattice's unit cell [(LSMO) n /(BFO) ] 60/ ( = 1, 2, 5, 10) on a SrTiO...
In this paper, we discuss possible solutions to overcome the critical issues for GaN-on-Si power device popularization including cost competitiveness Si MOSFETs, system level reliability verification, and electromagnetic interference (EMI) mitigation at high switching frequency without compromising loss. Both an advanced epitaxy technology a comprehensive platform of 200 mm electron mobility transistors (HEMTs) mass production are presented. A novel strain engineering is reported realize...
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F − ) treatment is proposed and its mechanism investigated. The features the Selective F both in AlGaN channel region thick passivation layer between gate drain (SFCP-MIS-HEMT). First, not only extends depletion thus enhances average electric field (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:mi>E</mml:mi></mml:mrow></mml:math>-field) by assisted...
Antifogging coatings with superhydrophilic performance by manipulating composition and structure have obtained significant consideration over recent years attributed to their ability readily form a thin water film, which does not deteriorate light transmission. In this work, an advanced organic-inorganic nonhomogeneous antifogging coating has been successfully fabricated. The bottom layer was comprised of silica nanoparticles, forming the three-dimensional (3D) network skeleton via...
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the selective regrowth (SR) AlN/AlGaN strain layers has been proposed. The novel engineering is used to realize 2-D gas (2DEG) redistribution by polarization effect and surface electric field optimization modulation effect. SR increase 2DEG density in access region reduce ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Weakly electric fish employ active electrolocation for orientation and navigation in their environment at night thus able perceive an electrical image of surroundings even complete darkness. This principle is adopted to design a technical sensor system. In this paper, we conducted the underwater experiments different water conductivities environment. The following conclusions were obtained: has some relationships with conductivity effect on image. There blind area location specific may be...
Novel lateral AlGaN/GaN Schottky barrier diodes (SBDs) featuring nanoscale multi-channel for gradient two-dimensional electron gas (2DEG) modulation have been proposed and successfully demonstrated on silicon substrates. The 5 °C low temperature plasma etching with improved resolution is developed to form the trenches. Due aspect ratio dependent etching, trenches different widths depths can be fabricated in one step process. Owing small discontinuous area of trenches, lattice strain...