A5073982875- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Copper-based nanomaterials and applications
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Analytical Chemistry and Sensors
- Radiation Detection and Scintillator Technologies
- Particle Detector Development and Performance
- Photocathodes and Microchannel Plates
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Atomic and Subatomic Physics Research
- Radiation Effects in Electronics
- Advanced Chemical Sensor Technologies
- 2D Materials and Applications
- Metal and Thin Film Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Transition Metal Oxide Nanomaterials
- Diamond and Carbon-based Materials Research
- Nuclear Physics and Applications
Dalian University of Technology
2016-2025
Dalian University
2015-2024
Liaoning Normal University
2016
State Council of the People's Republic of China
2016
State Key Laboratory on Integrated Optoelectronics
2007-2011
Jilin University
2007-2011
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry
2011
Abstract X‐ray imaging technology covers a wide range of applications in the medical, industrial, and scientific research fields. Highly sensitive, flexible, cost‐effective scintillation screens are great importance for applications. In this paper, manganese (II) activated 2D butylammonium lead bromide perovskite, namely BA 2 PbBr 4 :Mn (II), is demonstrated as highly efficient low‐cost scintillator. The appropriate amount Mn dopant can act an activator achieving optimization luminescence...
In this paper, hexagonal structure phase-pure wide-band gap ε-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The with good crystal quality verified high-resolution X-ray diffraction. out-of-plane epitaxial relationship between and substrates is confirmed to be (0001)//6H-SiC (0001), the in-plane also ⟨112¯0⟩//6H-SiC ⟨112¯0⟩. SEM AFM images show that are uniform flat. thermally stable up approximately 800 °C begin transform into β-phase Ga2O3 at 850...
Self-powered solar-blind ultraviolet (UV) photodetectors have drawn worldwide attention in recent years because of their important applications military and civilian areas. In this study, a dual-source vapor codeposition technique was employed, for the first time, to prepare nontoxic copper halide Cs3Cu2I5, which integrated with β-Ga2O3 wafer construct type-II heterojunction photodetection applications. By optimizing annealing conditions, high-quality Cs3Cu2I5 films dense morphology, high...
Abstract “A Craftsman Must Sharpen His Tools to Do Job,” said Confucius. Nuclear detection and readout techniques are the foundation of particle physics, nuclear astrophysics reveal nature universe. Also, they being increasingly used in other disciplines like power generation, life sciences, environmental medical etc. The article reviews short history, recent development, trend techniques, covering Semiconductor Detector, Gaseous Scintillation Cherenkov Transition Radiation Readout...
Pure ε- and β-phase gallium oxide (Ga2O3) films have been successfully grown on Al2O3 (001) substrate via metal–organic chemical vapor deposition (MOCVD) at a growth temperature of 500 °C. Growth pressure controlled nucleation is the dominant controlling parameter for pure phase Ga2O3 film growth. Due to biaxial stress induced by lattice mismatch, heteroepitaxial ε-phase heterogeneous low pressure. However, dominated spherical nuclei homogeneous higher than 100 mbar, with mosaic surface. The...
A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga2O3. Cu and Ti/Au were deposited top bottom surface of Ga2O3 as ohmic contacts, respectively. The SBD exhibits a higher rectification ratio up to 5 × 107 at ±2 V. photoresponse spectra show maximum responsivity 241 nm cutoff wavelength 256 nm. solar-blind/ultraviolet solar-blind/visible rejection can reach high level 200 1000, It is interesting that device has clear response zero bias,...
Abstract Fast neutron and X‐ray imaging are considered complementary nondestructive detection technologies. However, due to their opposite cross‐sections, development of a scintillator that is sensitive both fast neutrons X‐rays within single‐material framework remains challenging. Herein, an organic–inorganic hybrid perovskite (C 4 H 9 NH 3 ) 2 PbBr (BPB) demonstrated as fully meets the requirements for detection. The hydrogen‐rich organic component acts converter produces detectable recoil...
The functional mechanism of oxide-based gas sensors and the catalysis reaction are controversial topics. traditional static photoelectron data collection technique is obviously not satisfied for this study. However, after appropriate remodification system we propose a new, online XPS in-situ overcoming difficulty. This was employed first time on kind study with SnO2-based sensors. results found as follows: (1) For rutile SnO2 in powder form, its O1s peak 531.8 eV would come from lattice...
n-ZnO/p-Si hetero-junction light emitting diodes were fabricated using a metal organic chemical vapour deposition (MOCVD) technique. Room temperature (RT) photoluminescence (PL) spectrum showed an intense main peak at 377 nm and weak deep-level emission. The I–V characteristics of the rectifying diode behaviour different temperatures. At low bias voltage, typical values ideality factors determined to be 2.84 77 K 1.94 300 K, indicating that junction had good characteristics. RT...
The light-emitting diode of p-ZnO∕n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. p-ZnO films have been formed the doping As atoms which diffuse into ZnO film from GaAs substrate. p-type behavior As-doped based on p-ZnO∕n-GaAs, p-ZnO∕p-GaAs studied carrying out I-V measurements and x-ray photoelectron spectroscopy. characteristic showed rectifying visual-infrared electroluminescence emission under forward current injection at room temperature. heterounction had a...
ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and avoid unexpectable contaminating during epitaxy process. layer is helpful reduce leakage current, as well achieve high transparency in visible light band, due wide band gap (7.7eV) constant (9.8). The XRD measurement indicates that has crystal quality. field effect...