A5078184979- GaN-based semiconductor devices and materials
- Photocathodes and Microchannel Plates
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Radiation Detection and Scintillator Technologies
- Ga2O3 and related materials
- Diamond and Carbon-based Materials Research
- Particle Detector Development and Performance
- solar cell performance optimization
- Advanced Semiconductor Detectors and Materials
- ZnO doping and properties
- Nuclear Physics and Applications
- Silicon Nanostructures and Photoluminescence
- Dark Matter and Cosmic Phenomena
- Photonic Crystals and Applications
- Wireless Networks and Protocols
- Electronic and Structural Properties of Oxides
- Laser-Matter Interactions and Applications
- Laser-Plasma Interactions and Diagnostics
- Astronomy and Astrophysical Research
- Military Defense Systems Analysis
- Semiconductor materials and interfaces
- Radiation Effects in Electronics
- Embedded Systems and FPGA Design
Zhengzhou University
2022-2024
East China University of Technology
2015-2024
Shanghai Advanced Research Institute
2019
Chinese Academy of Sciences
2019
ShanghaiTech University
2019
Dalian University
2015-2018
Dalian University of Technology
2015-2018
North China Institute of Science and Technology
2009-2011
Tohoku University
1997-1998
Negative electron affinity GaAs wire-array photocathodes have been fabricated by reactive ion etching and inductively coupled plasma of bulk material followed Cs-O activation. Scanning microscope has revealed that the thus obtained high-density wire arrays had high periodicity, large height, good morphology. Photoluminescence spectra indicated were crystalline quality free from any obvious damage. Compared to original wafer, photoluminescence peak positions somewhat red-shifted, which may be...
The resolution model of a graded doping and composition transmission-mode AlGaAs/GaAs photocathode is solved numerically from the two-dimensional continuity equations. According to model, we calculate theoretical modulation transfer function (MTF) different structures. simulation results show that both structures can increase photocathode. exponentially linear has maximum among possible photocathodes. improvement attributed built-in electric field induced by or structure. also MTFs cathodes...
For the frequency range of 1 kHz–10 MHz, interface state density Ni contacts on p-GaN is studied using capacitance-voltage (C–V) and conductance-frequency-voltage (G–f–V) measurements at room temperature. To obtain real capacitance Ni/p-GaN structures, effects series resistance () high-frequency (5 MHz) values measured a reverse forward bias are investigated. The mean densities obtained from – conductance method , respectively. Furthermore, derived higher than that reported Ni/n-GaN in...
Currently, the high-purity single crystal diamond preparation is still a challenging task, which restricts application of in electronics. In this paper, chemical vapor deposition (CVD) IIa type was prepared on high pressure temperature (HPHT) substrate by combining chamber design with plasma purifying technology, and performance detectors using both diamonds were compared based defect analysis. The dislocations directly observed synchrotron radiation X-ray white-beam topography. CVD shows...
Abstract: Development of the fast neutron radiography with higher penetration capability in Non-Destructive Testing (NDT) techniques is rapidly. The detection efficiency and imaging spatial resolution are main problem detector for many systems. In this paper, a composed pixelated EJ200 scintillator array，an 16 × silicon-photomultipliers (SiPM) array, capacitive multiplexing network readout electronics designed. Using Monte-Carlo simulations，the parameters was optimization. Then prototype...
In this study, a new magneto-optical trap (MOT) recoil ion momentum spectrometer is built for investigating the interactions between cold rubidium (Rb) atoms and strong laser fields. This compact device can provide Rb in three different modes: 2D MOT mode, which beam generated by two-dimensional pushed directly to interaction regime; molasses cooling lasers are applied at 3D quadrupole magnetic field form three-dimensional MOT. The typical densities of target modes estimated be 107, 108, 109...
We reported a method combining the gas–liquid interface and inductively coupled plasma (ICP) to fabricate highly-ordered nanowire arrays on 2 inch GaAs substrate. A large-area SiO2 nanosphere monolayer was fabricated array etched by ICP. The flow rates ratios of etching gases were studied. Finally, with high quality surface morphology obtained volumetric at 9 sccm 21 for BCl3 N2 gases, respectively. Reflectance samples found be consistently below 10%, lowest being 3%.
The effects of different masks and patterns on the top stripping GaAs microwire arrays fabricated by inductively coupled plasma etching for 20 min 40 are investigated. results show that mask layer is main affect microwires in min. Increasing layers reducing photoresist can prevent result a suitable array.
Recently, optical resonances of nanostructured semiconductor were proved highly effective for light management in many optoelectronic devices.In this work, the monodispersed silica nanospheres with particle sizes 270330 nm synthesized by modified two-step Stober method, and nanosphere size uniformity was improved optimizing synthesis conditions.Then, as-prepared self-assembled into monolayer as etching mask on silicon substrate means constant temperature heating evaporation.Finally, Si...
Metallic photocathodes have drawn attention due to their outstanding performances of ultrafast photoelectric response and long operational lifetime. However, high work function the large number scattering events, metallic typically are driven by ultraviolet laser pulses characterized low intrinsic quantum efficiency (QE). In this work, a new type Mie-type silver (Ag) nano-sphere resonant structure fabricated on an Ag/ITO composite substrate is used enhance photocathode QE, where Mie...
Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure sufficiently low. significantly suppressed under high of As. A possible mechanism its implication growth GaAs are discussed.
A GaN-based pin neutron detector with a 6 LiF conversion layer was fabricated, and can be used to detect thermal neutrons. Measurement of the electrical characteristic showed that reverse leakage current reduced significantly after deposition on surface. The neutrons in this experiment were obtained from an 241 Am–Be fast source being moderated by 100-mm-thick high-density polyethylene. experimental results show 16.9-μm thick achieved maximum detection efficiency 1.9% at bias 0 V, which is...
Hexagonal boron nitride (h-BN) with a certain thickness has wide applications in semiconductor electronic devices. In this study, the relationship between amount of ammonia borane and h-BN films was investigated via low-pressure chemical vapor deposition (LPCVD) on noncatalytic c-plane Al2O3 substrate. Through various characterization methods, grown film confirmed to be h-BN. The effect precursor mass growth studied, it found that significantly affected rate film. results from SEM show is...
Among non-destructive testing (NDT) techniques, fast neutron radiography with a higher penetration capability has achieved rapid advancements. However, the application of detector in many imaging systems is limited by unfavorable detection efficiency and spatial resolution. In this paper, was designed, which composed pixelated EJ200 scintillator array, 16 × silicon photomultiplier (SiPM) capacitive multiplexing network readout electronics. The main parameters were optimized using Monte Carlo...
Pin structure GaN-based alpha particle detector with epitaxial growth on c-plane sapphire substrate through metal organic chemical vapor deposition (MOCVD) method, uses electron beam evaporation and photoetching machine to produce the ohmic contact electrodes of device. The electrical properties device which were tested by I-V C-V show that device’s reverse leakage current is 9.9μA at 100V bias voltage at; detector’s junction capacitance 19pF 20V voltage.
The embedded and field-bus technology have a profound impact on industrial control area. paper design an numerical (NC) system based ARM, the NC has characteristics of high precision, low cost, good openness so on. Through extend CAN bus interface circuit ARM which can realize network system. for one computer more tools resolve problem real-time result from transmission. realization improve efficiency process enhance ability.