A5045618487- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Advanced materials and composites
- Advanced Surface Polishing Techniques
- High-pressure geophysics and materials
- GaN-based semiconductor devices and materials
- Ion-surface interactions and analysis
- Advancements in Battery Materials
- Advanced Battery Materials and Technologies
- Electronic and Structural Properties of Oxides
- Neonatal Respiratory Health Research
- Fibroblast Growth Factor Research
- Graphene research and applications
- Lubricants and Their Additives
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Carbon Nanotubes in Composites
- Advanced Battery Technologies Research
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Electronic Packaging and Soldering Technologies
- Advanced ceramic materials synthesis
- Proteoglycans and glycosaminoglycans research
- 3D IC and TSV technologies
University of Science and Technology Beijing
2016-2025
Jiangsu University of Science and Technology
2023-2024
Shunde Polytechnic
2024
Shandong First Medical University
2017-2024
Shandong Tumor Hospital
2024
Beijing University of Chemical Technology
2013-2023
State Key Laboratory on Integrated Optoelectronics
2023
Jilin University
2023
Shanghai Architectural Design & Research Institute
2023
Shanghai Xiandai Architectural Design
2023
A novel porous sulfur/carbon nanocomposite was prepared as the cathode material for lithium–sulfur batteries. The nanostructure of composite is beneficial enhancing cycle life by accommodating volume expansion sulfur particles and adsorbing polysulfide produced during electrochemical reaction. resulting shows a high capacity 1039 mA h g−1 at 1C (1C = 1675 g−1) in first reversible remains up to 1023 even after 70 cycles.
Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently work function such films, spontaneous charge transfer occurs at QD/ZnO interface in a QD-LED, thus leading to reduced performance. Here, improve QD-LED performance, we prepared Ga-doped NPs low functions tailored band structures via room-temperature (RT) solution process...
Chitosan with abundant hydroxyl and amine groups as an additive for cathodes separators has been proven to be effective polysulfide trapping agent in lithium–sulfur batteries.
This study aims to investigate the mechanical properties changes and underlying reasons caused by Mn addition Cu6Sn5 intermetallic compounds (IMC). For this purpose, 0.07 wt.% doped SnAgCu (SAC)305/Cu joint were prepared observe its shear performance at a high speed of 1000 mm/min after aging 170°C for 750 h. The Mn-doped samples exhibited smaller decline aging, in comparison undoped samples. Notably, fracture location transitioned from interior SAC interface doping. Nanoindentation...
CuInS2 (CIS) quantum dots (QDs) have tunable photoluminescence (PL) behaviors in the visible and near infrared spectral range with markedly lower toxicity than cadmium-based counterparts, making them very promising applications light emitting solar harvesting. However, there still remain material- fabrication- related obstacles realizing high-performance CIS-based QDs well-resolved Mn2+d-d emission, long emission lifetimes as well high efficiencies. Here, we demonstrate growth of...
Dual emission quantum dots (QDs) have attracted considerable interest as a novel phosphor for constructing ratiometric optical thermometry because of its self‐referencing capability. In this work, the exploration codoped Zn–In–S QDs with dual emissions at ≈512 and ≈612 nm from intrinsic Cu Mn dopants temperature sensing is reported. It found that dopant can be tailored by adjusting Mn‐to‐Cu concentration ratios, enabling in tunable manner. The energy difference between conduction band host...
Fabrication of well-aligned one-dimensional (1D) nanostrucutres is critically important and highly desired since it the key step to realize patterned arrays be used as display units. In present work, we report large-scale growth n-type SiC nanowire on 6H-SiC wafer substrates via pyrolysis polymeric precursors assisted by Au catalysts. The obtained nanowires are qualified with sharp tips numerous corners around wire bodies, which bring emitters excellent field emission (FE) performance low...
Current emission stability is one of the key issues for field emitters them to be practically applied as electron sources. In present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis polymeric precursors. The measured (FE) characteristics suggest that turn-on fields as-synthesized are reduced from 1.92 0.98 V μm−1 with temperature increasing room (RT) 500 °C, suggesting their excellent FE performances. slightly changed...
The realization of a practical lithium sulfur battery system, despite its high theoretical specific capacity, is severely limited by fast capacity decay, which mainly attributed to polysulfide dissolution and shuttle effect. To address this issue, we designed thin cathode inactive material interlayer modified separator block polysulfides. There are two advantages for strategy. First, the coating totally comes from cathode, thus avoids additional weights involved. Second, improve reversible...
Cu-doped Zn–In–Se QDs with color-tunable photoluminescence emissions are synthesized, and the as-fabricated QD-LEDs exhibit a luminous efficiency of 0.97 cd A<sup>−1</sup>.
The burgeoning multi-field applications of diamond concurrently bring up a foremost consideration associated with nitrogen. Ubiquitous nitrogen in both natural and artificial most cases as disruptive impurity is undesirable for material properties, eg deterioration electrical performance. However, the feat this common element-nitrogen, can change growth evolution, endow fancy colors even give quantum technology solid boost. This perspective reviews understanding progress including occurring...
Abstract Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, main obstacles development originate from small‐sized single‐crystal wafers instability electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on diamond substrate derived five‐inch (110) highly preferred polycrystalline film. The MOSFETs with performance are fabricated by combining an...
Integrated optical light source on silicon is one of the key building blocks for interconnect technology. Great research efforts have been devoting worldwide to explore various approaches integrate onto substrate. The achievements so far include successful demonstration III/V-on-Si hybrid lasers through III/V-gain material wafer bonding However, potential large-scale integration, leveraging mature complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more...