An ever increasing number of configuration parameters are provided to system users. But many users have used one setting across different workloads, leaving untapped the performance potential systems. A good can greatly improve a deployed under certain workloads. with tens or hundreds parameters, it becomes highly costly task decide which leads best performance. While such requires strong expertise in both and application, commonly lack expertise. To help tap systems, we present BestConfig,...

A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator integrated into the laser shares same InGaN quantum well active region with photodetector. By varying applied voltage to absorption can be adjusted due changed band bending region, hence threshold current light output power tuned. effectively detect tuned by which opens up a new way for photonic Si.

Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible on-chip photonic integration. Etching as an alternative approach holds great advantage in preparing mirrors no need breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have large roughness and damages, which would cause...

Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> passivation by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a high-temperature passivation-first technique no incompatibility issues. Through careful surface treatments, high-quality interfaces (regrown p-GaN/AlGaN / AlGaN), as well stable contact, can be achieved, enabling robust...

A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> -GaN drift layer with precisely-controlled n-type doping. high current on/off ratio of 10 xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> , an ideality factor 1.03, low specific on-resistance 1.41 mΩ·cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and relatively...

This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes (SBDs) with without argon-implanted termination (ArIT). The electrical characteristics in SBD edge sequentially go through thermionic field emission, variable range hopping (VRH), trap-assisted tunneling conduction as bias increases gradually. Its are limited by electric crowding effect. While for ArIT (ArIT-SBD), electrons at a low bias, following space-charge-limited (SCLC) model,...

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-FETs) with current density of −5.6 mA/mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I} _{{\mathrm {ON}}}/{I} {OFF}}}$ </tex-math></inline-formula> ratio 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> was demonstrated on a p-GaN/AlN/AlGaN/GaN heterostructure Si substrate. A decent ohmic contact...

This work demonstrates a novel Nitrogen-implanted (N-implanted) guard ring (GR) technology for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD). The GR parameters are designed and studied in detail by TCAD simulation. With 4.4- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick GaN drift layer, seven GRs with precise design greatly enhance...

A lithium and nitrogen codoping method has been employed to prepare p-type MgZnO films, p-MgZnO/i-ZnO/n-ZnO structured light-emitting devices (LEDs) photodetectors have fabricated. The LEDs can work continuously for about 97 h under the injection of a 20 mA continuous current, which is best value ever reported ZnO-based LEDs. performance degrades little after several running cycles. above results reveal applicability p-MgZnO films in optoelectronic devices.

This letter reports the influence of material quality and device processing on performance AlGaN-based Schottky barrier deep ultraviolet photodetectors grown Si substrates. The thermal annealing can significantly improve height wet chemical etching effectively remove damage. Meanwhile, decrease threading dislocation density pit size, especially later, substantially suppress reverse leakage. As a result, leakage current as-fabricated UV photodetector was reduced down to 3×10 −8 A/cm 2 ....

This work reports 1200-V quasi-vertical GaN-on-Si p-n diodes with a 6.6- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick high-quality GaN drift layer showing excellent static and dynamic performance. The as-fabricated diode gives high current on/off ratio of ~1010, low ideality factor 1.2, specific on-resistance (Ron,sp) 1.3 notation="LaTeX">$\text{m}\Omega...

We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN stripe-patterned Si(111) substrates with various trench widths. By narrowing down and ridge widths patterned Si substrates, crack-free, 6-micrometer-thick, films were produced. The full-width-at-half-maximum values X-ray-diffraction rocking curves for (0002) (101¯2) planes as low 260 374 arcsec, respectively, corresponding to a record dislocation density 1.3 × 109 cm−2. Through combination micro-Raman study X-ray...

Heteroepitaxial growth of high Al-content AlGaN often results in a density threading dislocations and surface hexagonal hillocks, which degrade the performance reliability AlGaN-based UVC light emitting diodes (LEDs). In this study, degradation mechanism impurity/defect behavior LEDs relation to hillocks have been studied detail. It was found that early is primarily caused by electron leakage. The prominent contribution hillock edges leakage unambiguously evidenced transmission microscopy...

Abstract This work presents a high-performance AlInGaN/GaN high-electron-mobility transistor (HEMT) with the gate process using fluorine-based plasma and oxidation treatment (FAO) which induces formation of Ni-Al-O interfacial oxide layer in region, achieving threshold voltage ( V th ) -0.2 V, enhanced thermal stability (Δ &lt; 0.3 V) low leakage current (~ 3 × 10 -7 A/mm). Moreover, simplified fabrication employs low-pressure chemical vapor deposition (LPCVD) SiN x as both mask for...

This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with lasing wavelength 386.3 nm at room temperature. The crack-free structure was epitaxially grown on Si substrates using an Al-composed down-graded AlN/AlGaN multilayer buffer to mitigate the mismatches in lattice constant and coefficient thermal expansion, processed into “sandwich-like” structures radius 12 μm. Air-bridge electrodes were successfully fabricated enable device...

Silicon photonics has been calling for an electrically pumped on-chip light source at room temperature decades. A GaN-based microdisk laser diode with whispering gallery modes grown on Si is a promising candidate compact source. By suppressing the unintentional incorporation of carbon impurity in p-type AlGaN cladding layer laser, we have significantly reduced operation voltage and threshold current GaN-on-Si laser. Meanwhile radius was shrunk to 8 µm lower thermal power. The overall...

Abstract GaN-based microring lasers grown on Si are promising candidates for compact and efficient light sources in Si-based optoelectronic integration optical interconnect due to their small footprints, low mode volume, power consumption, high modulation rate. However, the symmetry of circular microcavity leads isotropic emission, which not only reduces collection efficiency, but also affects other adjacent devices during data transmission. In this study, unidirectional lasing emission...

This work presents a characterization study on the internal quantum efficiency of InGaN-based green light-emitting diodes (LEDs) grown Si with markedly different buffer strain. One huge residual compressive strain but low density threading dislocations (TDD, ∼9.0 × 10 8 cm -2 ) by using conventional Al-composition step-graded AlN/AlGaN buffer, and other nearly strain-free relatively high TDD (∼2.5 9 an AlN single-layer buffer. An intriguing difference in 56% 78% for two samples is revealed....

In this work, the mechanism of RF loss up to 110 GHz for N-polar GaN has been studied. With assistance S-parameter characterization combined with secondary ion mass spectroscopy analyses, incorporated oxygen impurity identified be main source bringing about severe GaN. The compensation Fe-doping enables an effective reduction in loss. Moreover, unintentionally doped (UID) layer grown on top Fe-doped buffer requires a careful design due distinct memory effect optimization its thickness, very...

Abstract In this work, the relationship between 2DEG density and electron velocity in AlGaN/GaN-based single-channel multi-channel structures has been studied through I-shape test structure pulsed I-V measurements. With an optimized epitaxial design, a with of 0.65×10^13 cm^-2 presents maximum 1.57×10^7 cm/s at 100 kV/cm, which is 2.4 times higher than that conventional structure. This ultra-low highly suitable for enhanced-mode FinFETs, offering significant potential radio-frequency mobile...

A major obstacle in the commercialization of GaN-on-Si RF HEMTs lies elevated thermal resistance introduced by AlN/AlGaN multi-layer buffer, employed for stress management. This issue adversely impacts device performance and reliability. In this study, structure function method was utilized to precisely determine intrinsic materials. Results reveal that a single-layer AlN buffer demonstrates significantly enhanced heat dissipation capability compared conventional or superlattice buffer....