A5063965613- ZnO doping and properties
- Muon and positron interactions and applications
- Semiconductor materials and devices
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
- Advancements in Battery Materials
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Supercapacitor Materials and Fabrication
- Gas Sensing Nanomaterials and Sensors
- Advanced Battery Materials and Technologies
- GaN-based semiconductor devices and materials
- Microwave Engineering and Waveguides
- Graphene research and applications
- Ammonia Synthesis and Nitrogen Reduction
- Advanced battery technologies research
- Radio Frequency Integrated Circuit Design
- Perovskite Materials and Applications
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Thin-Film Transistor Technologies
- Atomic and Molecular Physics
University of Hong Kong
2016-2025
Chinese University of Hong Kong
2006-2025
Petronas (Malaysia)
2024
China Electronic Product Reliability and Environmental Test Institute
2022
South China Normal University
2022
South China Institute of Collaborative Innovation
2022
Shanghai Institute for Science of Science
2022
Pakistan Institute of Engineering and Applied Sciences
2020
State Council of the People's Republic of China
2015-2018
Pakistan Institute of Nuclear Science and Technology
2017
ZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods studied by scanning electron microscopy, photoluminescence (PL), time-resolved PL, X-ray photoelectron spectroscopy, and positron annihilation spectroscopy before after annealing in different environments at temperatures. Annealing atmosphere temperature had significant effects on the PL spectrum, while all cases diffusion length decay times increased. We found that, defect emission can be significantly reduced 200...
Abstract Rechargeable aqueous Zn‐ion batteries (ZIBs) show attractive potential in energy storage devices on account of high safety and eco‐friendliness. Yet the lack suitable cathode materials prevented practical application ZIBs. In our work, a Na 0.56 V 2 O 5 (NVO) nanobelt material has been fabricated via hydrothermal reaction. The prepared NVO samples reveal an expanded layer spacing, assisted by chemical intercalation + into . Particularly, mild hybrid cationic electrolyte (0.5HCE,...
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and as well multilevel storage ability. Although tens states have been reported in literature, there are still three obvious deficiencies most memories: large programming voltage (>20 V), high optical power density (>1 mW cm-2), poor compatibility originating from over-reliance on channel materials. Here, we firstly propose an based a new photosensitive dielectric (PSD) architecture....
A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown (HTG) or melt (MG), has been performed. The crystal quality assessed by x-ray diffraction, and a comprehensive estimation the detailed impurity hydrogen contents inductively coupled plasma mass spectrometry nuclear reaction analysis, respectively, made also. High precision positron lifetime experiments show that is observed in all crystals investigated, which clusters at 180--182 ps 165--167 for...
Abstract Zinc oxide is a very promising material for short‐wavelength light‐emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p‐type doping control over native defects introduced during or after growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate versatile method n‐type nanorods from same solution at temperature as low 90 °C, where...
A new type of monolithic planar transmission line, the microshield is proposed. This line can operate without need for via-holes or use air-bridges ground equalization. Furthermore, it has shown tendency to radiate less than conventional microstrip coplanar waveguide (CPW) and provide a wide range impedances due many available parameters design. The space domain integral equation method used analyze four different discontinuities proposed type. comparison CPW with respect radiation shows...
The fabrication of ZnO tetrapods an exceptional optical quality, based on a photoluminescence (PL) lifetime in the range tens nanoseconds and absence defect emission, is found to be possible very narrow temperature only. A reduction PL increase emission are observed for both higher lower growth temperatures. obtained optimal order magnitude than best results achieved epilayers single crystals. Temperature dependence high-quality tetrapod samples indicates that dominant recombination...
Abstract Flexible rechargeable zinc‐ion batteries (ZIBs) have aroused tremendous attention owing to the good safety and abundant reserves, making it one of most promising alternatives for novel energy storage devices. Herein, flexible, free‐standing hybrid films with a three‐dimensional interlaced network are reported ZIBs. The flexible pliable VO 2 /MXene deliver high specific capacity 228.5 mAh g −1 at 0.2 A display reversible over 126.6 after 700 cycles . More impressively, electrode also...
Rectifying undoped and nitrogen-doped ZnO∕p-Si heterojunctions were fabricated by plasma immersion ion implantation deposition. The ZnO films n type (n∼1019cm−3) highly resistive (resistivity ∼105Ωcm), respectively. While forward biasing the undoped-ZnO∕p-Si, current follows Ohmic behavior if applied bias Vforward is larger than ∼0.4V. However, for nitrogen-doped-ZnO∕p-Si sample, Vforward<1.0V then transits to J∼V2 Vforward>2.5V. transport properties of undoped-ZnO∕p-Si...
Conversion of the Au∕n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation and deep level transient spectroscopy. treatment did not affect carbon surface contamination or EC–0.31eV level, but it resulted in a significant decrease OH formation vacancy-type defects (Zn vacancy cluster) close surface. The can be attributed reduced conductivity region due removal defects.
The colossal dielectric constant and relatively low loss (<italic>ε</italic><sub>r</sub> = 9862 tan <italic>δ</italic> 0.159) in ZnO ceramics have been achieved <italic>via</italic> acceptor donor co-doping method.
The influence of postannealing in different gaseous environments on the optical properties indiu-tin-oxide (ITO) thin films deposited glass substrates using e-beam evaporation has been systematically investigated. It is found that annealing conditions affect and electrical films. Atomic force microscopy, x-ray diffraction, photoemission spectroscopy (XPS) were employed to obtain information chemical state crystallization These data suggest states surface morphology ITO film are strongly...
A low temperature (10 K) photoluminescence study shows that green luminescence peaking at 2.47 eV and near band edge emission 3.23 from the Zn-vacancy related defect are introduced in undoped ZnO grown by pulsed laser deposition after annealing 900 °C.
A lithium and nitrogen codoping method has been employed to prepare p-type MgZnO films, p-MgZnO/i-ZnO/n-ZnO structured light-emitting devices (LEDs) photodetectors have fabricated. The LEDs can work continuously for about 97 h under the injection of a 20 mA continuous current, which is best value ever reported ZnO-based LEDs. performance degrades little after several running cycles. above results reveal applicability p-MgZnO films in optoelectronic devices.
Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that dominant VZn-related defect in as-grown undoped with relative low oxygen pressure P(O2) is a vacancy cluster (most likely VZn-nVO complex n = 2, 3) rather than isolated VZn which has lower formation energy. Annealing these samples 900 °C induces out-diffusion Zn from film into sapphire creating...
Influences of growth parameters on the shape and ferroelectric properties a 2D-In<sub>2</sub>Se<sub>3</sub>layered structure grown by CVD were systematically studied.