The aim of this study was to explore the feasibility fused deposition modeling (FDM) 3D printing prepare intragastric floating sustained release (FSR) tablets. Domperidone (DOM), an insoluble weak base, chosen as a model drug investigate potential FSR in increasing its oral bioavailability and reducing administration frequency. DOM successfully loaded into hydroxypropyl cellulose (HPC) filaments using hot melt extrusion (HME). were then printed hollow structured tablets through changing...

In this paper, we present a comprehensive, correlative study of the structural, transport, optical and thermoelectric properties high-quality VO2 thin films across its metal-insulator phase transition. Detailed x-ray diffraction shows that it's textured polycrystalline along [010]M1, with in-plane lattice orienting three equivalent crystallographic directions. Across transition, conductivity increases by more than 3 orders magnitude value 3.8 × 103 S/cm in metallic phase. This increase is...

A high-speed c-plane InGaN/GaN blue micro-scale light-emitting diodes (Micro-LEDs) with a pixel diameter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$60~\mu \text{m}$ </tex-math></inline-formula> , and high −3 dB modulation bandwidth 1.53 GHz at the current density 5996 A/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were demonstrated. The ultra-thin quantum well (QW) structure InGaN...

Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in applications. However, its decreasing pixel size complex manufacturing process create challenges integration driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures unit. Researchers take advantage of the performance transistors low power consumption, current gain, fast response frequency. This...

Micro Light-emitting diodes (Micro-LEDs) array for near-eye display with pixel dimensions of 1.3×1.5 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were fabricated, corresponding to a resolution 10040 pixels per inch (PPI). Optimized N <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O plasma treatment process was deployed minimize the sidewall non-radiative recombination and increase radiative efficiency Micro-LEDs. The...

An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength nanocrystals (NCs) as color‐conversion mediums. MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation NCs. A significant reduction in decay lifetime of excitons structure observed a result NRET from nitride...

Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, edge effect caused by inductively coupled plasma (ICP) dry etching Micro-LEDs significant with respect decreased chip size, resulting great reduction device performance. In this article, sector-shaped GaN-based blue are designed and fabricated. Additionally, performance different size passivation...

Self-powered ultraviolet (UV) photodetectors have great application prospects in the fields of UV astronomy, environmental monitoring, and space communication. In particular, emerging photoelectrochemical (PEC PDs) without external bias, high sensitivity, sensitivity attracted extensive attention. Herein, self-powered PEC PDs were designed constructed by using highly ordered GaN nanorod arrays (NRAs) as photoelectrodes. Without with NRA structures exhibit a peak responsivity 6.04 mA/W...

GaN-based Micro-LED has become a research hotspot as novel display technology due to its numerous unique advantages. Especially in augmented reality and smart glasses applications, chip with high transparency possesses unparalleled opportunities. In this work, transparent single-color based on double-side polished sapphire substrate was designed single pixel size of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages high efficiency, brightness and stability. However, typical micro-fabrication process would leave a great number damages on sidewalls LED pixels, especially Micro-LEDs, thus reducing light emitting efficiency. In this paper, sidewall passivation methods were optimized by using acid-base wet etching SiO2 layer passivation. The optical...

High-responsivity and energy-saving ultraviolet photodetectors become crucial components for modern optoelectronic information sensing communication systems. This study presents an advanced self-powered MXene/GaN Schottky photodetector that features a high-quality van der Waals interface to enhance photoresponsivity. The exhibits high responsivity of 681.6 mA W−1 significant detectivity 7.65 × 1013 Jones at zero bias. In mode, the detector can operate robustly even under dim illumination...

A series of highly ordered c-plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The photoluminescence (PL) integral intensities NR samples show remarkable enhancement factor up to two orders magnitude compared with their corresponding as-grown at room temperature. radiative recombination in is found be greatly enhanced due not only the suppressed non-radiative but also strain relaxation and optical waveguide...

A new type of Micro-LED driving technique has attracted wide attention, for its advantages and potential applications in the field where direct current-drive (DC-drive) LED is restricted. However, understanding dominant mechanism AC-driven still vague. In this work, single contact (SC-LED) devices were fabricated. Electrical optical characteristics are investigated. equivalent circuit model established simulated. The injection efficiency (INJ) discussed, which understands SC-LEDs. These...

We demonstrated the monolithic integration of GaN-based driving metal-oxide-semiconductor field effect transistor (MOSFET) on micro-light-emitting diodes ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LEDs) by regrowing a hybrid tunnel junction (TJ) top commercial green LED wafer. The TJ served not only as current spreading layer for LEDs, but n/p/n structure + stack...

We propose a strain relaxed template (SRT), which consists of an InGaN decomposition layer (DL) and GaN protecting layers grown at three different temperatures as stop (DSLs), to enhance the indium incorporation in quantum wells. The high-temperature growth DSL decomposed DL created voids inside release as-grown templates. Although surface morphology slightly degraded with DL-DSL SRT, emission wavelength over 4-in. wafer was uniform standard deviation 3.4 nm. In addition, chip containing SRT...

Solar-driven photocatalytic CO2 conversion is a promising strategy to alleviate the energy crisis and reduce level of emissions. In this study, GaN@β-Ga2O3 core–shell nanowire (NW) arrays were prepared via thermal oxidation GaN NWs, their reduction performance was investigated. NWs exhibited superior activity compared β-Ga2O3 under simulated sunlight irradiation. The average CO production rate reached ∼447.30 μmol g–1 h–1 within 3 h. process further enhanced using with Ag nanoparticles ∼18...

Abstract The optical chirality of metamaterials gives birth to distinct responses left circularly polarized (LCP) and right (RCP) light, leading asymmetric transmission circular dichroism (CD) light. In this work, meta-atom structure composed square semicircular combinations were designed, which exhibits extreme high ratio transmission, reflection CD values in blue light range. compare other reported structures, the can achieve better transmission. At wavelength 460 nm, incident LCP be...

GaN nanorods with a period of 400 nm and diameter 200 nm, nano-gratings gap width 100 are fabricated on wafers by soft UV-curing nanoimprint lithography. These nanostructures show high periodicity good morphology. The photoluminescence (PL) spectra exhibit that the integral PL intensity is enhanced as much 2.5 times, compared to as-grown films. According finite-difference time-domain simulations cathodoluminescence mappings, it concluded enhancement for due improvements both spontaneous...

Abstract The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based have been fabricated by a soft UV-curing nano-imprint lithography and top-down etching technique, which improve the incident photon (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, turn-on voltage...

We fabricated p-i-n tunnel junction (TJ) contacts for hole injection on c -plane green micro-light-emitting diodes (micro-LEDs) by a hybrid growth approach using plasma-assisted molecular beam epitaxy (PA-MBE) and metal–organic chemical vapor deposition (MOCVD). The TJ was formed an MBE-grown ultra-thin unintentionally doped InGaN polarization layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msup> <mml:mi mathvariant="normal">n</mml:mi>...

The self-powered photodetector has recently received wide attention as a fundamental component of energy-saving optoelectronic systems. In this study, the GaN@Ga2O3 core–shell nanowire arrays (NAs) were used photoanode for solar-blind photoelectrochemical-type photodetectors (PEC-PDs). vertically aligned NAs on GaN template was fabricated by inductively coupled plasma etching combined with thermal oxidation process. Under 255 nm illumination without an external power supply, device exhibits...

Abstract GaN-based microring lasers grown on Si are promising candidates for compact and efficient light sources in Si-based optoelectronic integration optical interconnect due to their small footprints, low mode volume, power consumption, high modulation rate. However, the symmetry of circular microcavity leads isotropic emission, which not only reduces collection efficiency, but also affects other adjacent devices during data transmission. In this study, unidirectional lasing emission...