Abstract Emission from metal–organic frameworks (MOFs) made Eu 3+ and 1,3,5‐benzenetricarboxylic acid (BTC) is enhanced eightfold by doping with Y Ca 2+ ions. The ions are shown to substitute into the MOFs, MOFs structure be retained at high levels. emission enhancement associated variations in local electric field centers MOFs. Calculations indicate that HOMO LUMO levels vary considerably both low‐level doping. These then modulates concentration quenching, ligand‐metal energy transfer...

Abstract In this study, heterostructured nanoparticles based on lanthanide double perovskite halide are innovatively proposed, which dramatically improved quantum yield and color purity, but the problem of water stability materials has also been solved. The without surface ligands have excellent optical properties when dispersed in water, higher purity than those organic solvents. Besides, application potential is demonstrated practical performance verified by preparing luminescent ink. This...

Abstract Modulating the emission wavelengths of materials has always been a primary focus fluorescence technology. Nanocrystals (NCs) doped with lanthanide ions rich energy levels can produce variety emissions at different excitation wavelengths. However, control multimodal these remained challenge. Herein, we present new composition Er 3+ ‐based NCs color‐switchable output under irradiation 980, 808, or 1535 nm light for information security. The variation changes intensity ratio visible...

Abstract Fluorescence bioimaging has always been a research hotspot in the field of life sciences and medicine. Although many studies focus on promising second near infrared window (NIR‐II) imaging, NIR‐II imaging with deep tissue penetration is limited by broad emission band widths. Herein, well‐designed lanthanide doped nanocrystal presented that can modulate energy migration processes controlling pathway cerium‐assisted transfer processes, resulting switchable modes visible dependent...

Lanthanide-doped metal-organic frameworks (Ln-MOFs) have versatile luminescence properties, however it is challenging to achieve lanthanide-based upconversion in these materials. Here, 1,3,5-benzenetricarboxylic acid (BTC) and trivalent Yb3+ ions were used generate crystalline Yb-BTC MOF 1D-microrods with under near infrared excitation via cooperative luminescence. Subsequently, the MOFs doped a variety of different lanthanides evaluate potential for -based energy transfer. Er3+ , Ho3+ Tb3+...

Abstract Fluorescent temperature sensing is considered as a research hotspot in the fields of life sciences and medicine. Despite existence numerous materials, low sensitivity still limits their broader application. Herein, core‐shell‐shell structure lanthanide‐doped nanoparticles designed, which can adjust energy transfer process by controlling Yb 3+ concentration migration layer, so to generate different but regular visible upconversion near‐infrared downshifting emission modes depending...

Ultrasonic shot peening (USSP) is a technique to tune the performance of metallic materials by generating gradient nanocrystalline structure (GNS) as well residual compressive stress. However, surface contamination can also be introduced during USSP. The nature this layer and how it influences corrosion behavior alloy require further investigation. In work, we found that Fe-rich oxide with thickness around 50 nm, mainly in an amorphous state, was on topmost TA2 USSP treatment....

A GaN complementary field-effect transistor (FET) inverter monolithically integrated with power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si substrate. The p-channel and n-channel logic devices were fabricated based p-GaN/AlGaN/GaN epi-structure. Through optimization of epi-layer thickness doping, excellent low-level noise margin (NM_L) 1.47 V high-level (NM_H) 0.98 achieved at supply voltage <inline-formula> <tex-math...

In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to WPT system demonstration. Benefited wide bandgap, high mobility, saturation velocity of gallium nitride (GaN) two-dimensional electron gas, engineered lateral SBD with low turn-ON voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Both dc and OFF-state stress characteristics of vertical beta-gallium oxide (β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 1.5 kV, respectively, sacrificing...

In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> (at 10 μA/mm) is improved from 1850~2100 to 2200~2600 LGD = 22μm. Due high electric field of AlGaN material, xmlns:xlink="http://www.w3.org/1999/xlink">RB</sub> reaches as -1950 ~ -2200 V. For HEMTs with L...

Heart disease remains a significant threat to human health. As non-invasive diagnostic tool, the electrocardiogram (ECG) is one of most widely used methods for cardiac screening. However, scarcity high-quality ECG data, driven by privacy concerns and limited medical resources, creates pressing need effective signal generation. Existing approaches generating signals typically rely on small training datasets, lack comprehensive evaluation frameworks, overlook potential applications beyond data...

Antibiotics are widely used in treating animal and human diseases; thus, the trace detection of antibiotics is crucial challenging. Currently, sensors for antibiotic generally responsive only to a single type antibiotic. Herein, we designed prepared luminescence ratio nanocomposite (UCN-ATPA-Eu3+), which 2-Aminoterephthalic acid (ATPA) was functionalize upconversion nanoparticles (UCN), Eu3+ ion coordinated at periphery. The upconversion/downshifting from different categories can be achieved...

In this letter, a high-performance GaN quasi-vertical Schottky barrier diode (SBD) is demonstrated via oxygen plasma termination. A specific on-resistance of 0.2 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , turn-on voltage 0.71 V, and breakdown 193 V are achieved with SBD 1.3μm drift layer. The average electric field calculated to be about 1.48 MV/cm, which much higher than the state-of-art value for vertical SBDs....

Microstructure, thermal stability at room temperature and corrosion behavior of ultrasonic shot peened AA7034 were investigated in this work. Microstructure modification induced by peening was obtained using OM, SEM, EBSD XRD, it found that a ∼200 μm thick gradient surface layer with nano-scale grains on the topmost sample. XRD peaks pre-existing aging-induced precipitates, i.e., η′ η phases, disappeared after did not show up during 52 months-long natural aging treatment, showing good...

Lu-MOFs with formic acid as the sole ligand were synthesized by a formamide hydrolysis reaction. The luminescence color and intensity of Lu–Eu-MOFs-bipy can be controlled energy competition transfer between 4,4′-bipyridine Eu 3+ .

Temperature-dependent current–voltage characteristics was measured to investigate leakage conduction mechanisms in GaN-on-Si quasi-vertical Schottky barrier diode. At low reverse bias, thermionic emission is dominated. voltage range from −1 −20 V, variable hopping (VRH) main current mechanism at temperatures (298–373 K), while high (498–573 electrons gain enough energy and emit into the trapped states, Frenkel–Poole becomes dominant. a relatively range, increased electric field promotes...

The leakage mechanism of quasi-vertical GaN Schottky barrier diodes (SBDs) with ultra-low turn-on voltage has been investigated. By using a tungsten anode, the is 0.39 V and average breakdown electric field above 1 MV cm−1. Under low reverse bias, thermionic emission dominated. When bias increases to certain value, increased promotes electron hopping along threading dislocation in bulk layers, variable range (VRH) becomes main current mechanism. difference between tungsten-anode nickel-anode...