A5000888205- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Graphene research and applications
- 2D Materials and Applications
- Supercapacitor Materials and Fabrication
- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Advancements in Battery Materials
- Advanced Photocatalysis Techniques
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Energy Harvesting in Wireless Networks
- Advanced Sensor and Energy Harvesting Materials
- Radio Frequency Integrated Circuit Design
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Wireless Power Transfer Systems
- Semiconductor materials and interfaces
- Ferroelectric and Negative Capacitance Devices
- Advanced battery technologies research
- Perovskite Materials and Applications
- Advanced Battery Materials and Technologies
- Electromagnetic Scattering and Analysis
- Advanced Antenna and Metasurface Technologies
Xidian University
2016-2025
Huazhong University of Science and Technology
2022-2024
Yalong Hydro (China)
2024
Hefei University of Technology
2024
Guilin University of Technology
2023
Singapore University of Technology and Design
2022
Wuhu Institute of Technology
2021
Nanjing University of Posts and Telecommunications
2021
Nanjing University
2021
China XD Group (China)
2019
Abstract Gallium oxide (Ga 2 O 3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap 4.6–4.9 eV, estimated critical breakdown field 8 MV cm −1 , decent electron mobility 250 V s and high theoretical Baliga figures merit (BFOMs) around 3000. Bolstered by their capability economical growth technique for high-quality bulk substrate, β -Ga -based materials devices have been highly sought after in recent years power electronics solar-blind ultraviolet...
Abstract The practical application of infancy‐stage rocking‐chair Zn‐ion batteries is predominately retarded by the strong electrostatic interaction between traditional anode materials with bivalent Zn 2+ , resulting in irreversible serious structural damage, unsatisfactory cycling stabilities, and poor rate performances. Herein, an advanced dual electric field situ induced intercalation/conversion dual‐mechanism Na 1.6 TiS 2 /CuSe heterointerface towards ultrastable aqueous zinc‐ion...
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...
In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various periodic fin widths of 1.5/3/5 μm are demonstrated the incorporation p-type NiOx. The HJBS diode achieves a low specific on-resistance (Ron,sp) 1.94 mΩ cm2 breakdown voltage 1.34 kV at width 3 μm, translating to direct-current Baliga's power figure merit (PFOM) 0.93 GW/cm2. addition, find by shrinking width, reverse leakage current is minimized due enhanced sidewall depletion...
Recently, micro-supercapacitors (MSCs) have undergone major development as next-generation micro-electrochemical energy storage devices for self-powered, integrated, and wearable systems, thanks to their excellent performance capability. In particular, rapid frequency response characteristics make them potential candidates replace conventional capacitors function alternating current (AC) line filters rectify pulse or ripple in the kHz range. However, few papers been published about...
Engineering F-rich solid electrolyte interphase (SEI) layers is regarded as an effective strategy to enable the long-term cycling stability of potassium-ion batteries (KIBs). However, in conventional KPF
Abstract Flexible energy storage devices play a pivotal role in realizing the full potential of flexible electronics. This work presents high‐performance, all‐solid‐state, supercapacitors by employing an innovative multilevel porous graphite foam (MPG). MPGs exhibit superior properties, such as large specific surface area, high electric conductivity, low mass density, loading efficiency pseudocapacitive materials, and controlled corrugations for accommodating mechanical strains. When loaded...
In this letter, we report on demonstrating a high performance vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) based self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of ions, fixed negative charges introduced by F ions during BFPT process alleviate electric field crowding,...
Recent developments in the synthesis of graphene-based structures focus on continuous improvement porous nanostructures, doping thin films, and mechanisms for construction three-dimensional architectures. Herein, we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid melting-reconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard Ni Si surface, reduce free energy thermodynamic equilibrium solid Ni-Si particles,...
In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) silicon substrate with low turn-on voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ), high breakdown (BV) reverse leakage current (IR), and power figure of merit (P-FOM) through anode engineering technique. Lateral SBD anode-cathode distance (L xmlns:xlink="http://www.w3.org/1999/xlink">AC</sub> ) 25 μm demonstrates a V = 0.38...
In this work, we have demonstrated normallyoff β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D-) Enhancement (E-) mode device, respectively, which shows negligible current reduction. Steep...
In this work, an enhancement-mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) has been achieved by incorporating a laminated-ferroelectric charge storage gate (L-FeG) structure [Al2O3/HfO2/Al2O3/Hf0.5Zr0.5O2 (HZO) of 10/5/2/16 nm]. The band diagram between L-FeG dielectrics (Al2O3, HfO2, and HZO) was determined x-ray photoelectron spectroscopy. After applying pulse with intensity +18 V width 1 ms, the saturation current E-mode device measured to be 23.2 mA/mm,...
Abstract Constructing a flexible and chemically stable multifunctional layer for the lithium (Li) metal anodes is highly effective approach to improve uneven deposition of Li + suppress dendrite growth. Herein, an organic protecting polythiophene in situ polymerized on via plasma polymerization. Compared with thiophene (C‐PTh), (P‐PTh), higher Young's modulus 8.1 GPa, shows strong structural stability due chemical binding Li. Moreover, nucleophilic C─S bond facilitates decomposition salts...
Abstract TiS 2 has received significant attention as a promising anode for “Rocking‐Chair”‐type aqueous Zn‐ion batteries due to the large interlayer spacing and low discharge plateau. However, structural distortion caused by embedding of divalent Zn 2+ well undesirable hydrogen evolution reaction (HER) severely affects their cycling stability. Herein, facet‐dependent mechanism is first deeply investigated understand charge storage behaviors via differential electrochemical mass spectrometry,...
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn- ON voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{ON}}$ </tex-math></inline-formula> ) 0.35 V and tungsten (W) as anode. Non-field-plated SBDs anode–cathode distances notation="LaTeX">${L}_{\text {AC}}$ 6, 10, 15, 20, notation="LaTeX">$25~\mu...
The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality GaN/Aluminum (AlN) materials has become a hot topic. Raman spectroscopy proven to be very useful in analyzing the characteristics wide band gap materials, which reveals information interaction sample phonon dynamics. Four GaN samples grown on different types buffer layers were fabricated influence graphene sputtered AlN epitaxial analyzed through E2 (high) A1 (LO) phonon. relationship between...
A GaN complementary field-effect transistor (FET) inverter monolithically integrated with power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si substrate. The p-channel and n-channel logic devices were fabricated based p-GaN/AlGaN/GaN epi-structure. Through optimization of epi-layer thickness doping, excellent low-level noise margin (NM<sub>L</sub>) 1.47 V high-level (NM<sub>H</sub>) 0.98 achieved at supply voltage <inline-formula> <tex-math...