A5070286974- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Thin-Film Transistor Technologies
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Physics of Superconductivity and Magnetism
- Superconductivity in MgB2 and Alloys
- Organic Electronics and Photovoltaics
- Advanced Power Amplifier Design
- Silicon Carbide Semiconductor Technologies
- Conducting polymers and applications
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Silicon Nanostructures and Photoluminescence
- Quantum Dots Synthesis And Properties
- Ferroelectric and Negative Capacitance Devices
- Metal and Thin Film Mechanics
Northeast Agricultural University
2023-2025
Hebei University of Technology
2025
Xinjiang University
2025
Xidian University
2015-2024
Fudan University
2024
Chongqing Technology and Business University
2024
PLA Rocket Force University of Engineering
2024
University of Science and Technology Beijing
2009-2024
Jilin Medical University
2023
Jilin University
2023
Abstract Gallium oxide (Ga 2 O 3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap 4.6–4.9 eV, estimated critical breakdown field 8 MV cm −1 , decent electron mobility 250 V s and high theoretical Baliga figures merit (BFOMs) around 3000. Bolstered by their capability economical growth technique for high-quality bulk substrate, β -Ga -based materials devices have been highly sought after in recent years power electronics solar-blind ultraviolet...
We report on achieving high-performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power devices through the incorporation of p-type NiO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> . p-n heterojunction (HJ) diodes, as well novel HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's figure merit (P-FOM). The diode is introduced...
In this letter, we report on demonstrating high-performance field-plated lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) a sapphire substrate with reverse blocking voltage of more than 3 kV and low dc specific...
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...
Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)-based ferroelectric-field-effect transistor (FeFET) with a ZrO seed layer was demonstrated. It found that the could effectively improve ferroelectric properties of (hafnium zirconium oxide) HZO thin film. The remanent polarization and coercive voltage metal-ferroelectric-insulator-semiconductor (MFIS) structure were larger...
In this report, we demonstrate high spectral responsivity (SR) solar blind deep ultraviolet (UV) β-Ga2O3 metal-semiconductor-metal (MSM) photodetectors grown by the mist chemical-vapor deposition (Mist-CVD) method. The thin film was on c-plane sapphire substrates, and fabricated MSM PDs with Al contacts in an interdigitated geometry were found to exhibit peak SR>150A/W for incident light wavelength of 254 nm at a bias 20 V. devices exhibited very low dark current, about 14 pA V, showed sharp...
In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various periodic fin widths of 1.5/3/5 μm are demonstrated the incorporation p-type NiOx. The HJBS diode achieves a low specific on-resistance (Ron,sp) 1.94 mΩ cm2 breakdown voltage 1.34 kV at width 3 μm, translating to direct-current Baliga's power figure merit (PFOM) 0.93 GW/cm2. addition, find by shrinking width, reverse leakage current is minimized due enhanced sidewall depletion...
Single crystallinity (AlGa)2O3 solar-blind photodetectors are epitaxially grown on sapphire. Oxygen pressure during the growth has a great impact Al composition in (AlGa)2O3, which is investigated utilizing X-ray photoelectron spectroscopy and diffraction measurements. Measured transmittance spectra responsivity demonstrate that achieve wider bandgap compared to Ga2O3 device. An (Al0.12Ga0.88)2O3 device obtains 10 times higher photocurrent Iphoto than photodetector. However, as increases,...
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of FeFET MFIS could satisfy requirements practical applications, its memory window (MW) reliability respect to endurance should be further improved. This work investigates advantage employing ZrO2 seed layers on MW,...
Abstract Due to the excellent responsivity and high rejection ratio, Ga 2 O 3 -based solar-blind ultraviolet photodetectors (PDs) are attracting more attention. The material quality ensures great performance of PDs. In this review, we summarize recent advancements in growth methods β -Ga bulk thin films. Based on high-quality substrates films, numerous state-of-art PDs have been reported decades. Therefore, collect some representative achievements PDs, summarizing development process each...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have developed a novel AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistor using stack gate <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> structure grown by atomic layer deposition. The consists of thin Notation="TeX">$ \hbox{HfO}_{2}$</tex></formula> (30-<formula Notation="TeX">$\hbox{\rm{\AA}}$</tex></formula>)...
In this paper, β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ultraviolet photodetectors were grown on sapphire utilizing the laser molecular beam epitaxy tool. The impact of oxygen pressure P xmlns:xlink="http://www.w3.org/1999/xlink">O2</sub> in growth chamber crystal quality, surface morphology, chemical component Ga films, and electrical performance are characterized. As is...
High-quality bulk β-Ga<sub>2</sub>O<sub>3</sub> single crystals have been grown by optimized edge-defined film-fed growth (EFG) method.
We fabricated β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> photodetectors on bulk substrate and sapphire. Bulk Ga photodetector demonstrates the improved responsivity compared with device sapphire, due to higher crystal quality in material. Optical gain is achieved both devices. For first time, we report that epitaxially grown sapphire achieves a blueshift of bandgap comparison...
In this letter, we report on demonstrating a high performance vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) based self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of ions, fixed negative charges introduced by F ions during BFPT process alleviate electric field crowding,...
β-Ga2O3 epitaxial thin films were deposited by laser molecular beam epitaxy (LMBE) and annealed at 800°C for 30 minutes in air oxygen atmospheres, respectively. Photodetectors fabricated using as-grown Ga2O3 epilayers. The influence of the annealing atmosphere on crystal structure optical properties was investigated. X-ray diffraction (XRD) measurements show that in-plane compressive strain could be relaxed after high temperature thermal annealing. Compared with sample, samples exhibit a red...
Abstract Due to the suitable bandgap, superior chemical and physical properties, β‐phase gallium oxide (β‐Ga 2 O 3 ) has great potential fabricate deep ultraviolet solar‐blind photodetectors (DUV PDs). However, low material quality, high growth cost, insufficient device performance, are urgently required be solved for practical applications. In this work, by using a vacuumfree, low‐cost mist vapor deposition method, quality β‐Ga single crystal films successfully heteroepitaxially grown on...
In this work, we have demonstrated normallyoff β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D-) Enhancement (E-) mode device, respectively, which shows negligible current reduction. Steep...
In this work, an enhancement-mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) has been achieved by incorporating a laminated-ferroelectric charge storage gate (L-FeG) structure [Al2O3/HfO2/Al2O3/Hf0.5Zr0.5O2 (HZO) of 10/5/2/16 nm]. The band diagram between L-FeG dielectrics (Al2O3, HfO2, and HZO) was determined x-ray photoelectron spectroscopy. After applying pulse with intensity +18 V width 1 ms, the saturation current E-mode device measured to be 23.2 mA/mm,...
In this letter, we demonstrate a high performance lateral β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> solar-blind Schottky barrier photodiode (SBPD) with record detectivity (D*) and ultrahigh gain via carrier multiplication process. Due to the strong electric field, carriers generated under 254 nm light illumination undergo acceleration impact ionization, contributing internal...
This letter demonstrates a high performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO ) Gate Dielectric. The SBPT shows Photo-to-dark-current ratio (PDCR) of 6.9×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , an I xmlns:xlink="http://www.w3.org/1999/xlink">254...
In this paper, we report on achieving the first high performance lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) sapphire substrate via transferring nano-membrane channel from a low dislocation density bulk substrate. Non...
Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved quantum well (QW) pTFETs pMOSFETs fabricated Si. QW demonstrate a high effective hole mobility of 505 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, indicating the crystallinity material. outperform devices Si(001) subthreshold swing (SS) ON-state current I <sub...