A5039002992- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Advanced Photocatalysis Techniques
- Semiconductor Quantum Structures and Devices
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- Organic Light-Emitting Diodes Research
- Photoreceptor and optogenetics research
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Metal and Thin Film Mechanics
- Transition Metal Oxide Nanomaterials
- Photochromic and Fluorescence Chemistry
- Ion-surface interactions and analysis
- Luminescence and Fluorescent Materials
- Analytical Chemistry and Sensors
- Molecular Junctions and Nanostructures
- Photocathodes and Microchannel Plates
Xidian University
2016-2025
Jilin University
2025
State Key Laboratory of Supramolecular Structure and Materials
2025
Degradation and trap evolution in NiO/β-Ga2O3 heterojunction pn diodes under on-state electrical stress were investigated this work using deep-level transient spectroscopy measurements density functional theory (DFT) calculations. The decrease turn-on voltage forward current appears to correlate with an increase the concentration of compensating acceptor-like traps. From energy level EV + 1.3 eV, corresponding traps can be attributed Ga vacancy complex hydrogen (VGa-H). Interestingly,...
The synergistic impact of reverse bias stress and 3 MeV proton irradiation on the β-Ga2O3 p–n diode has been studied from perspective defect in this work. forward current density (JF) is significantly decreased with increase fluence. According to deep-level transient spectroscopy results, acceptor-like trap an energy level EC-0.75 eV within drift layer, which most likely be Ga vacancy-related defects, can key origin device degradation. these traps results carrier concentration reduction,...
The effect of neutron irradiation on the electrical performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 Schottky barrier diode (SBD) device has been studied in this work. After equivalent 1 MeV with a fluence notation="LaTeX">$1\times 10^{{14}}$ n/cm2, 20% decrease forward current density ( notation="LaTeX">${J}_{\text {F}}{)}$ , 75% reduction reverse...
A β-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the reverse leakage subthreshold current reduction found at high temperatures from temperature-dependent I–V characteristics. The functional mechanisms of as edge termination on were studied. can increase height passivate defects interface, resulting in suppression elimination crowding effect confirmed by thermal emission microscope. From x-ray photoelectron spectroscopy characteristics, more holes...
In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both drain current and increase during irradiation. With increasing bias, device burns eventually. Technology computer-aided design simulation used to explore possible mechanism....
Defect behaviors in the degradation of AlGaN-based UV-C light emitting diodes (LEDs) under constant current stress have been intensively investigated this work. It is found that both reduction optical power and increase leakage are derived from newly generated Ga vacancy (VGa) along dislocation, based on evidence a strong “yellow” emission peak at 515 nm photoluminescence spectra an energy level 0.25–0.38 eV. More importantly, defect evolution behind it was determined through deep transient...
This study explores the impact of constant forward electrical stress on beta-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) from prospective defect evolution. Prolonged significantly increased reverse leakage current density (JR) and (JF) under small bias decreased turn-on voltage (Von). Temperature-dependent current-voltage (I-V-T) analysis revealed that is dominated by Poole-Frenkel (PF) emission in both fresh stressed SBDs, while transport mechanism transforms thermionic (TE) to...
The effect of hydrogen on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device has been studied in this article for the first time. It was found that electrical performance -Ga2O3 SBDs changed significantly after treatment, including turn-on voltage ( notation="LaTeX">${V}_{\text {on}}{)}$ decreased by 0.3 V...
A low work function metal Mo is used as a Schottky to fabricate beta-phase gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\beta} $</tex-math> </inline-formula> -Ga notation="LaTeX">$_{\text{2}}$</tex-math> O notation="LaTeX">$_{\text{3}}\text{)}$</tex-math> barrier diodes (SBDs) with size of 1 mm notation="LaTeX">$^{\text{2}}$</tex-math> , achieving an ultralow...
In this Letter, a single-event burnout (SEB) mechanism in gallium nitride (GaN) microwave monolithic integrated circuit power amplifiers with high linear energy transfer of 78.1 MeV·cm2/mg has been investigated detail. A typical SEB phenomenon was observed. With the aid photon emission measurements and scanning electron microscopy, it is found that catastrophic occurs power-stage GaN mobility transistors (HEMTs) metal–insulator–metal (MIM) capacitors, respectively. For HEMT, incident heavy...
Abstract In this paper, a beta-phase gallium oxide ( β -Ga 2 O 3 ) vertical FinFET with diamond-gate has been studied by Silvaco-ATLAS simulation. The structure achieves adjustable pin (p-insulator-n) junction owing to the diamond-SiO heterostructure. This design also enhances heat dissipation virtue of high thermal conductivity diamond. Compared conventional FinFETs, (DG-FinFET) reduces static operating temperature rise around 17.30%. Additionally, due its greater capacity, DG-FinFETs...
In this Letter, threshold voltage instability of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias (HTRB) stress has been investigated in detail. The experimental results show that the increases by 0.62 V after 100 ks at 200 °C. Especially, degradation phenomenon is unrecoverable. A deep-level transient spectroscopy (DLTS) technique used to characterize defect evolution process during stress. Two kinds electron traps within layer were proposed explain degradation, which...
Degradation and defect evolution in GaN-based UV LEDs under 3 MeV proton irradiation were throughly investigated this work. Combined with the yellow luminescence band at ∼2.2 eV photoluminescence spectra energy level of Ev + 0.16 extracted by deep-level transient spectroscopy measurement, an intrinsic CN-related abnormally decreased concentration after was identified. Based on levels, spatial configuration defects, their correlations, several possible origins processes defects are...
The electrical stress-induced increase in forward and reverse leakage current has been commonly observed beta-gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3) Schottky barrier diodes (SBDs). However, the transformation of transport mechanism during stress not investigated. Its correlation with defects devices also established. In this work, defect...
In this work, 1-mm2 NiOx/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with Stripe and honeycomb anode p+ islands layout are compared in static characteristics, reverse recovery surge current robustness for the first time. comparison HJBS diodes, although Honeycomb have a slightly higher turn-on voltage...
The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors (HEMTs). In this work, the influence of diamond layer on electrical characteristics HEMTs investigated by simulation. results show that lattice temperature can be effectively decreased utilizing layer. With increasing drain bias, plays a more significant role reduction. It also observed induce negative shift threshold voltage and increase transconductance. Furthermore, thickness frequency as well....
The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated this work. Utilizing the frequency-dependent conductance technique, detailed information about different doses evaluated. When dose is increased to 5 × 1014 H+/cm2, it observed that deepest energy level changes from 0.375 eV 0.346 and shallowest 0.284 0.238 eV. corresponding range expands 0.091 0.108 Especially, trap density at are reduced by 65% 93%,...
A p-type NiO junction termination extension (JTE) was incorporated into a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide (Ga2O3) Schottky barrier diode (SBD). To mitigate plasma damage on the Ga2O3 surface, pulsed laser deposition (PLD) employed for growing layer as JTE, replacing conventional radio frequency (RF) magnetron sputtering. Prior to PLD...