About
Contact & Profiles
A5040065460
Research Areas
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
Xidian University
2023
In this Letter, threshold voltage instability of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias (HTRB) stress has been investigated in detail. The experimental results show that the increases by 0.62 V after 100 ks at 200 °C. Especially, degradation phenomenon is unrecoverable. A deep-level transient spectroscopy (DLTS) technique used to characterize defect evolution process during stress. Two kinds electron traps within layer were proposed explain degradation, which...
10.1063/5.0132187
article
EN
Applied Physics Letters
2023-02-27
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