A5091877711- Ga2O3 and related materials
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- Organic Electronics and Photovoltaics
- Advanced Memory and Neural Computing
- Neuroscience and Neuropharmacology Research
- Ferroelectric and Negative Capacitance Devices
- Neural dynamics and brain function
- Conducting polymers and applications
- Transition Metal Oxide Nanomaterials
- Graphene research and applications
- CCD and CMOS Imaging Sensors
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Visual perception and processing mechanisms
- Effects and risks of endocrine disrupting chemicals
- Nanowire Synthesis and Applications
- Neural Networks and Reservoir Computing
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Iterative Learning Control Systems
University of Science and Technology of China
2016-2025
Changchun University of Technology
2024
Changzhou University
2024
Jiangsu University
2022-2023
Ministry of Science and Technology of the People's Republic of China
2023
Hefei National Center for Physical Sciences at Nanoscale
2020-2022
Weihai Municipal Hospital
2022
Institute of Microelectronics
2015-2020
Chinese Academy of Sciences
2014-2020
California NanoSystems Institute
2019-2020
Surface trap-mediated nonradiative charge recombination is a major limit to achieving high-efficiency metal-halide perovskite photovoltaics. The ionic character of lattice has enabled molecular defect passivation approaches through interaction between functional groups and defects. However, lack in-depth understanding how the configuration influences effectiveness challenge rational molecule design. Here, chemical environment group that activated for was systematically investigated with...
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in imaging, deep space exploration, confidential communication, etc. this work, we demonstrated an ultra-high-performance ε-Ga2O3 metal–semiconductor–metal (MSM) SBPD. The fabricated exhibited a record-high responsivity and fast decay time of 230 A/W 24 ms, respectively, compared with MSM-structured reported to date. Additionally, the MSM SBPD presents ultrahigh...
Abstract The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, HfO 2 has been accepted as one most promising materials. However, dynamic changes process, including composition structure filaments, especially evolution surroundings, remain controversial -based memristors. Here, system amorphous with various top electrodes is revealed to be a quasi-core-shell consisting metallic hexagonal-Hf 6 O its crystalline...
Detection and recognition of latent fingerprints play crucial roles in identification security. However, the separation sensor, memory, processor conventional ex-situ fingerprint system seriously deteriorates latency decision-making inevitably increases overall computing power. In this work, a photoelectronic reservoir (RC) system, consisting DUV photo-synapses nonvolatile memristor array, is developed to detect recognize with in-sensor parallel in-memory computing. Through Ga-rich design,...
Gallium oxide (Ga2 O3 ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such space exploration and flame prewarning. However, realization high-performance SBPDs high tolerance toward environments based on low-cost Ga2 material faces great challenges. Here, defect doping (DD) engineering towards amorphous GaOX (a-GaOX ) has been proposed to obtain ultrasensitive...
Abstract Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due to its critical applications, especially safety and space detection. A DUV photodetector based on wide-bandgap semiconductors provides a subversive scheme simplify currently mature system. As an ultra-wide-bandgap (4.4–5.3 eV) semiconductor directly corresponding waveband, Ga 2 O 3 important strategic position prospective layout of technology owing intrinsic characteristics high breakdown...
In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the without annealing (PND) and (APND) are studied systematically. APND device has lower specific on-resistance 4.1 mΩ cm2, compared to that PND, 5.4 cm2. Moreover, for APND, high breakdown voltage 1630 V leakage current is achieved, which 730 higher than PND. enhanced performance leads record power figure merit 0.65 GW/cm2 in...
In this work, we demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO—a key element for the potential commercialization of Ga2O3 power devices. The surface electric field at Schottky edge is effectively suppressed by NiO JTE. Simultaneously, it can control concentration to maximize breakdown voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor for new researches. This article mainly focuses on growth processes, characteristics, applications Ga2O3. Compared with single crystals epitaxial other wide-bandgap semiconductors, large-size high-quality β-Ga2O3 can be efficiently grown low cost, making them competitive. Thanks availability crystals, films, high-performance devices based Ga2O3 go...
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future application of ultrawide bandgap β-Ga2O3. In this work, we demonstrated an enhancement-mode β-Ga2O3 U-shaped gate trench vertical (UMOSFET) featuring a current blocking layer (CBL). The CBL was realized by high-temperature annealing under oxygen ambient, which provided electrical isolation between source and drain electrodes. thicknesses different temperatures were derived from C–V measurements...
Abstract High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide (Ga 2 O 3 ) film with an ultrawide bandgap endow its extreme propensity in flexible DUV photodetector especially for space exploration wearable electronics. However, efficient strategy high throughput low cost is highly deficient to realize robust Ga photodetectors face potential harsh environments. In this work, heat‐resistant based on optimized inkjet printing environmental‐friendly...
High-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to form current blocking layer. Electrons in the layer can accumulate area near groove and a conductive channel promote generation at positive gate bias....
Superior performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide ( -Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A (@2 V) and reverse breakdown voltage 1060 V an area notation="LaTeX">${3} \times {3}$ mm2 is presented. Meanwhile, the high power figure merit (PFOM) 0.72 GW/cm2 attributed to implementation pn...
In this study, we fabricated superb β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diodes (SBDs) with high breakdown voltage ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">V</i> xmlns:xlink="http://www.w3.org/1999/xlink">br</sub> ) and low leakage through combining platinum oxide (PtO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> anodic self-aligned...
Abstract Ga 2 O 3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and relatively slow response speed of device have restricted integration application photodetectors. Herein, narrow SiO barrier layer is introduced on commercial SiC substrate, vertical photodetector realized based β ‐Ga /SiO /SiC heterostructure controllable tunneling effect by tailoring band at interface. The developed...
Abstract Detecting high‐energy photons from the deep ultraviolet (DUV) to X‐rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting photons. However, implementation of highly sensitive high‐speed detectors based on WBG has been a huge challenge due inevitable level traps lack appropriate device structure engineering. Here, fast pyroelectric photoconductive diode (PPD), which couples interface effect with tailored...
Abstract Sensitive high‐energy photon detection from UV to X‐ray and high‐resolution array imaging are critical for medical diagnosis, space exploration, scientific research. The key challenges high‐performance photodetector arrays the effective material device design strategies miniaturization integration of device. Here, photon‐controlled diodes (i.e., detector has rectifying characteristics only under light irradiation) proposed anti‐crosstalk applications without integrating switching...
Bisphenol A (BPA), an environmental xenoestrogen, has been reported to induce learning and memory impairments in rodent animals. However, effects of BPA exposure on synaptic plasticity the underlying physiological mechanisms remain elusive. Our behavioral electrophysiological analyses show that obviously perturbs hippocampal spatial juvenile Sprague–Dawley rats after four weeks exposure, with significantly impaired long‐term potentiation (LTP) hippocampus. These involve decreased spine...
Herein, high‐performance enhancement‐mode (E‐mode) β ‐Ga 2 O 3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are achieved on Si‐doped homoepitaxial films. Oxygen annealing (OA) treatment under the gate region is used to effectively exhaust channel electron, resulting in normally off operation of device. The threshold voltage, defined as that at drain current 0.1 mA mm −1 , for fabricated device extracted be 4.1 V. Moreover, double source‐connected field plates suppress peak...
In this article, for the first time, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistor (MOSFET). Enhancement-mode operation achieved VLD transistor. The maximum transconductance new device is more than three times as...
This letter reports a high-performance solar-blind phototransistor based on N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -annealed β-Ga O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> microflake for weak light detection. The exhibits an ultra-low dark current of 27 fA, high external quantum efficiency 8.36 x 107%, photo-to-dark-current ratio 1.08 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , low power consumption...
This work demonstrates vertical <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\beta } $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) breaking through the power figure of merit 1 GW/cm<sup>2</sup> without edge termination. The unreliable surface on top notation="LaTeX">$\sim {1.2}\times {10} ^{{16}}$ </tex-math></inline-formula> cm<sup>−3</sup> drift region, which naturally formed in air, was removed by inductively coupled plasma...