A5074574243- Ga2O3 and related materials
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Neural Networks and Reservoir Computing
- Ferroelectric and Negative Capacitance Devices
- Photoacoustic and Ultrasonic Imaging
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
University of Science and Technology of China
2018-2025
Ministry of Science and Technology of the People's Republic of China
2023
In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the without annealing (PND) and (APND) are studied systematically. APND device has lower specific on-resistance 4.1 mΩ cm2, compared to that PND, 5.4 cm2. Moreover, for APND, high breakdown voltage 1630 V leakage current is achieved, which 730 higher than PND. enhanced performance leads record power figure merit 0.65 GW/cm2 in...
In this work, we demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO—a key element for the potential commercialization of Ga2O3 power devices. The surface electric field at Schottky edge is effectively suppressed by NiO JTE. Simultaneously, it can control concentration to maximize breakdown voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this letter, source-field-plated β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs are fabricated on Si-doped homoepitaxial film (010) Fe-doped semi-insulating substrate. Ohmic contact resistance (R xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) between metal- and ion-implanted source/drain layer of 1.0 Ω · mm is obtained by employing the Si-ion implantation. The...
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future application of ultrawide bandgap β-Ga2O3. In this work, we demonstrated an enhancement-mode β-Ga2O3 U-shaped gate trench vertical (UMOSFET) featuring a current blocking layer (CBL). The CBL was realized by high-temperature annealing under oxygen ambient, which provided electrical isolation between source and drain electrodes. thicknesses different temperatures were derived from C–V measurements...
Selective area doping technique is essential for diversifying semiconductor device structures. In this letter, selective high-resistance zones on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 wafers were successfully achieved by a high-temperature oxygen annealing process. Polysilicon, which proved to have an ideal blocking capability against ambient, was...
High-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to form current blocking layer. Electrons in the layer can accumulate area near groove and a conductive channel promote generation at positive gate bias....
Superior performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide ( -Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A (@2 V) and reverse breakdown voltage 1060 V an area notation="LaTeX">${3} \times {3}$ mm2 is presented. Meanwhile, the high power figure merit (PFOM) 0.72 GW/cm2 attributed to implementation pn...
In this study, we fabricated superb β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diodes (SBDs) with high breakdown voltage ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">V</i> xmlns:xlink="http://www.w3.org/1999/xlink">br</sub> ) and low leakage through combining platinum oxide (PtO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> anodic self-aligned...
Abstract Ga 2 O 3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and relatively slow response speed of device have restricted integration application photodetectors. Herein, narrow SiO barrier layer is introduced on commercial SiC substrate, vertical photodetector realized based β ‐Ga /SiO /SiC heterostructure controllable tunneling effect by tailoring band at interface. The developed...
Abstract Detecting high‐energy photons from the deep ultraviolet (DUV) to X‐rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting photons. However, implementation of highly sensitive high‐speed detectors based on WBG has been a huge challenge due inevitable level traps lack appropriate device structure engineering. Here, fast pyroelectric photoconductive diode (PPD), which couples interface effect with tailored...
An enhancement-mode <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal–oxide–semiconductor field-effect solar-blind phototransistor on Si-doped homoepitaxial film grown by molecular beam epitaxy is demonstrated in this letter. Gate-recess process was...
Herein, high‐performance enhancement‐mode (E‐mode) β ‐Ga 2 O 3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are achieved on Si‐doped homoepitaxial films. Oxygen annealing (OA) treatment under the gate region is used to effectively exhaust channel electron, resulting in normally off operation of device. The threshold voltage, defined as that at drain current 0.1 mA mm −1 , for fabricated device extracted be 4.1 V. Moreover, double source‐connected field plates suppress peak...
In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting...
In this article, for the first time, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistor (MOSFET). Enhancement-mode operation achieved VLD transistor. The maximum transconductance new device is more than three times as...
This work demonstrates vertical <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\beta } $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) breaking through the power figure of merit 1 GW/cm<sup>2</sup> without edge termination. The unreliable surface on top notation="LaTeX">$\sim {1.2}\times {10} ^{{16}}$ </tex-math></inline-formula> cm<sup>−3</sup> drift region, which naturally formed in air, was removed by inductively coupled plasma...
In this study, we demonstrate an effective edge termination for vertical NiO/β-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> heterojunction diodes using a continuous p-NiO film as Junction Termination Extension (JTE). The JTE can spread out the electric field and reduce peak of devices. annealing process was optimized to suppress leakage current increase I...
Ultra wide bandgap semiconductor beta-gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3) has the potential in fabricating next generation of power devices applied at high temperature and voltage due to its superior material properties cost competitiveness. However, performance existing -Ga2O3 diodes is far from theoretical value because restriction...
This work reports a β-Ga2O3 double-barrier Schottky barrier diode (DBSBD) with both low turn-on voltage and reverse leakage current by using Ni PtOx as the anode electrode. The height of PtOx-based can be effectively modulated from 1.26 to 1.62 eV adjusting oxygen pressure during sputtering processes. Combining maximum function electrode optimization ratio PtOx, DBSBD an diameter DNi /DPtOx = 75/150μm not only exhibits high forward 470.9 A/cm2 (at 3.5 V), on-resistance 4.1 mQ ·cm2 1.13 V,...
Abstract β-Ga 2 O 3 power diodes were expected to possess low turn-on voltage ( V on ), reverse leakage J R and high blocking capability for losses. In this work, a (0.48 V) heterojunction barrier Schottky diode (HJBS) with tungsten contact was achieved. Benefitting from the lateral depletion of p + -NiO suppress originating barrier, HJBS enhanced. The spacing width systematically studied reveal its modulation effect forward characteristics. This work provides promising strategy improving...
Abstract β -Ga 2 O 3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperatures, optimizing the by reducing roughness dislocation density. Combined mesa termination, results showed that breakdown voltage ( V br ) significantly increased from 845 to 1532 V. The device a × mm anode size was fabricated simultaneously, high...
Abstract Gallium oxide (Ga 2 O 3 ), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed extreme conditions, for example, flame detection and space exploration, face challenges of performance degradation caused by high/low‐temperature transformation. Here, are tailored high durability stability one‐step‐grown β‐Ga films via pulsed laser...
Beta-phase gallium oxide (β-Ga2O3) has attracted increasing attention in the field of power electronic devices due to its ultra-wide bandgap and high Baliga figure-of-merit. However, premature breakdown deteriorated with increase device area, hindering scale-up current rating. In this work, we unveil formation characteristics killer defects responsible for an Si-doped (001) β-Ga2O3 epitaxial layer grown by halide vapor phase epitaxy. The feature a line-shaped morphology along [010]...
By electron paramagnetic resonance (EPR) and photoluminescence spectroscopy, we have investigated the effect of high-temperature annealing under oxygen atmosphere on electrical defect properties unintentionally doped (UID) highly (Sn) n-type bulk samples β-Ga2O3. The EPR analysis shallow donor concentration shows efficient compensation in Sn β-Ga2O3 but only marginal changes for UID samples. In samples, observe formation a Ga vacancy related acceptor responsible compensation. Its spin...