Enhancement-mode (E-mode) buried p-channel GaN metal-oxide-semiconductor field-effect-transistors (p-GaN-MOSFET's) with threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) of -1.7 V, maximum ON-state current (I xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> 6.1 mA/mm and I /I xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> are demonstrated on a...

By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p-GaN in gate stack, high-electron-mobility transistor (HEMT) with enhanced reliability is demonstrated. Prior to deposition, SRL formed by an oxygen-plasma treatment subsequent high-temperature annealing process (at 800 °C) that enables reconstruction. Such converts several nanometers of near into crystalline GaON layer, which exhibits stronger immunity hot electron bombardment. With nearly...

Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of GaN surface critical restriction that hinders development GaN-based devices, especially terms device stability reliability. In this study, challenge overcome by converting into gallium oxynitride (GaON) epitaxial nanolayer through an situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes chemical...

The planar nature of the GaN heterojunction devices provides extended dimensions for implementing monolithic power integrated circuits. This article presents a comprehensive review advancements in integration. Basic building blocks integration platform based on p-GaN gate HEMT technology are discussed, including high- and low-voltage transistors, lateral field-effect rectifiers, resistors, capacitors. Exemplary designs driving circuit detection/protection circuits this demonstrated....

An AlGaN/GaN double-channel Schottky barrier diode (DC-SBD) with dual-recess gated anode is demonstrated in this letter. The DC-SBD features two recess steps. deep one cuts through channels, and the metal contacts 2DEG directly from sidewall of recessed heterostructure. shallow terminates at upper channel layer located adjacent to contact. A MOS field plate placed on region pinchoff underlying so off-state leakage current can be suppressed. Since lower separated etched surface, field-effect...

In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate gate stack of p-GaN HEMT with Schottky contact. A metal/p-GaN/AlGaN/GaN heterojunction capacitor prepared for study. The DLTS characterization captures capacitance change in stack, from which metal/p-GaN junction can be extracted. By proper selection rate window, impacts hole insufficiency effect are avoided during trap states evaluation. Thus, information deep energy levels layer revealed, consists an...

In this work, we demonstrate a GaN-based <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {p-n}$ </tex-math></inline-formula> junction gate (PNJ) HEMT featuring an notation="LaTeX">${n}$ -GaN/ notation="LaTeX">${p}$ -GaN/AlGaN/GaN stack. Compared to the more conventional -GaN with Schottky between metal and layer, can withstand higher reverse bias at same peak electric-field as depletion region...

In this article, we systematically investigate the OFF-state drain-voltage-stress-induced threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> ) instability in Schottky-type p-GaN gate high electron mobility transistors (HEMTs). drain-voltage stress and recovery tests were conducted under various temperatures different drain biases. A sharp...

An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer. The (APL) electrically connected to gate, and thus can supply/release mobile holes through electrode. in APL effectively shields overlaying surface traps from depleting underlying 2DEG channel, results much improved dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics operating in an extremely wide temperature range (X-WTR) from 2 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler high-temperature bandgap substantially suppresses thermal excitation of intrinsic carrier. However, low-temperature side, two-dimensional electron hole gas (2DEG 2DHG) channels at...

The withstand capability and threshold voltage (VTH) instability of 1.2-kV silicon carbide (SiC) MOSFETs under repetitive short circuit (SC) tests are investigated. An SC test system is constructed to apply stress SiC measure the transfer I-V characteristics gate-to-source leakage current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GSS</sub> ) after each set tests. To evaluate capability, with different durations (t...

A gallium nitride (GaN) ring oscillator based on high-performance one-chip complementary logic (CL) inverters is demonstrated a conventional p-GaN gate power HEMT (high-electron-mobility transistor) platform. It manifests the feasibility of multiple-stage monolithic integration GaN CL gates, most energy-efficient digital circuit configuration, and consequently potential deploying circuits in all-GaN as peripheral with higher energy efficiency. Thanks to successful enhancement-mode p-channel...

GaN power IC's are expected to help unlock the full potential of electronics, especially in terms promoting high-frequency switching applications. This paper first discusses a integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated driver is presented as an example IC with enhanced performance, which bootstrap unit adopted realize rail-to-rail output voltage and fast speed. To deal GaN-specific design issues such unique dynamic V <sub...

A closely coupled double-channel (DC) structure realized on an 8-inch GaN-on-Si wafer is utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF linearity. The strong channel-to-channel coupling from this DC enables efficient transport of electrons between the two parallel channels accommodate balanced carrier concentration and current density channels. Consequently, nonlinearity source resistance under high operations external bias dependence cut-off...

Beta-phase gallium oxide (β-Ga2O3) has attracted increasing attention in the field of power electronic devices due to its ultra-wide bandgap and high Baliga figure-of-merit. However, premature breakdown deteriorated with increase device area, hindering scale-up current rating. In this work, we unveil formation characteristics killer defects responsible for an Si-doped (001) β-Ga2O3 epitaxial layer grown by halide vapor phase epitaxy. The feature a line-shaped morphology along [010]...

In this letter, we investigated the threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> stability under reverse-bias step-stress in E-mode LPCVD-SiNx/PECVD-SiNx/GaN MIS-FET. Under OFF-state stress with same net gate-todrain (VGD), shift shows an obvious dependence on negative gate bias. With a xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> of 0 V, is small and recoverable, while shifts are substantially larger more...

Abstract Various 2D/3D heterostructures can be created by harnessing the advantages of both layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on is proposed here. The SG-FET demonstrated an AlGaN/GaN high-electron mobility (HEMT) adopting single-layer MoS 2 as electrode. effectively turn off HEMT without sacrificing subthreshold swing breakdown voltage. Most importantly, deliver inherent over-voltage protection...

The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias. device commonly requires higher switch from high-drain-voltage off-state than what expected static characteristics. reason behind dynamic VTH has been proved be floating layer, where charges could stored and further influence under different In this article, SPICE-compatible equivalent circuit model presented according...

A hybrid field-effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide-bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, incompactness in epitaxy techniques hinders development HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially conventional 4° 4H-SiC...

A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which features a flip-chip copackaged cascode configuration incorporating vertical SiC JFET and lateral GaN-HEMT. The high-voltage SiC-JFET provides the blocking capability while low-voltage GaN-HEMT enables normally-off gate control with superior switching characteristics. Compared to conventional...

The low-temperature gate reliability of Schottky-type p-GaN AlGaN/GaN heterojunction field-effect transistors under forward voltage stress is investigated. Both temperature-accelerated and voltage-accelerated time-dependent breakdown experiments are performed. exhibits a shorter time-to-failure at lower temperature. It found that the “use conditions” predicted by acceleration tests high bias could be overestimated low temperatures. Such discrepancy stems from distinct dominant leakage...

Short circuit (SC) capability of 650-V Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) under single and repetitive tests is characterized in this article. The investigated devices exhibit strong a SC test, but weak with bus voltage 400 V drive 6 V. failure mechanism revealed through electrothermal simulation microscale spot analysis. Thermal fatigue cracks are formed due to the high temperature spike local fluctuations narrow GaN channel buffer layers, leading capability....

Hot electrons with high kinetic energy could be generated in the channel of GaN high-electron-mobility transistors (HEMTs) during hard switching operation. Those "lucky" hot scattered to vulnerable interface between passivation and barrier layers bombard region create new defects that would lead degradation dynamic on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ON}$...

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs MoS2, which results in n-type doping MoS2. The effect increases the barrier height at MoS2/InP heterojunction, thus averaged power conversion efficiency solar cells is from 2.1% to 4.1%. light...