The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as ON-resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> and threshold voltage V xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> are evaluated under both static dynamic (i.e., switching) operating conditions. found to exhibit different dependence on the drive...

The drain induced dynamic threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textrm {th}}$ </tex-math></inline-formula> ) shift of a notation="LaTeX">${p}$ -GaN gate HEMT with Schottky contact is investigated, and the underlying mechanisms are explained charge storage model. When device experiences high bias {DSQ}}$ , gate-to-drain capacitance notation="LaTeX">${C}_{\textrm {GD}}$...

Compared with the state-of-the-art Si-based power devices, enhancement-mode Gallium Nitride (E-mode GaN) transistors have better figures of merit and exhibit great potential in enabling higher switching frequency, efficiency, density for converters. The bridge-leg configuration circuit, consisting a controlling switch synchronous switch, is critical component many However, owing to low threshold voltage fast speed, E-mode GaN devices are more prone false turn-on phenomenon configuration,...

GaN power ICs provide an elegant solution for high-frequency switching applications. This paper will first discuss the integration platform, which requires not only a high-voltage switch, but also peripheral low-voltage transistors, diodes, resistors, capacitors, etc. The components are preferably fabricated using same process steps of switch to be cost-effective. As example IC, integrated gate driving circuit is demonstrated. By adopting charge pump unit, novel driver in this work enables...

Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the region, there exist Schottky junction (between electrode and layer) p-GaN/AlGaN/GaN heterojunction. As layer is not directly shorted to conducting channel, it can be considered as electrically "floating." With drain voltage changing during switching process, variation of net charge in floating would cause instability threshold voltage. Besides,...

The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias. device commonly requires higher switch from high-drain-voltage off-state than what expected static characteristics. reason behind dynamic VTH has been proved be floating layer, where charges could stored and further influence under different In this article, SPICE-compatible equivalent circuit model presented according...

The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex> -GaN gate HEMT with a Schottky contact is studied in this work. threshold voltage ( xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{V}_{\mathbf{th}}$</tex> ) of the device found to have dynamic nature. When experiences high drain xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{DSQ}}$</tex> , gate-to-drain capacitance...

Gallium Nitride (GaN) transistors are especially attractive in their capability of switching at high frequencies, and enable power conversion systems with reduced size higher efficiency. However, owing to the low threshold voltage commercially available enhancement-mode (E-mode) GaN devices, devices more prone false turn-on phenomenon, leading larger losses, circuit oscillation even shoot-through bridge-leg configuration. In order enlarge gate terminal's safe operating margin without...

This paper presents a systematic characterization of 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device characteristics are measured by taking into account trapping induced effects such as current collapse threshold voltage instability. Switching performance is evaluated up to 400 V, 10 using custom designed double-pulse test circuit. Optimal gate drive conditions proposed minimize the influence adverse on circuit while preventing from excessive...

In this work, an equivalent-circuit model of Schottky type p-GaN gate power HEMT is proposed and demonstrated using SPICE tools. The takes the distinct underlying physics structure into consideration precisely captures dynamic threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) phenomenon. V intrinsic property with a contact rooted in fact that layer floating. floating exhibits charge storage effect which it requires...

Sliding mode control (SMC) is recognized as robust controller with a high stability in wide range of operating conditions, however it suffers from chattering problem. Damping the effect to smooth discontinuity SMC. Nevertheless also limits performance Moreover real implementation SMC, sliding surface that linear combination system state variables and generated references would drift while parameters change or external disturbance exists, which affects tracking error THD output seriously. In...

Enhancement mode Gallium Nitride High-electron-mobility Transistors (GaN E-HEMTs) have displayed a great potential in boosting performances for power converters, compared with traditional Silicon devices. However, the bridge-leg configuration, GaN E-HEMTs are more subject to false turn-on due its low threshold voltage and fast switching speed, resulting undesired effects like higher loss shooting through. In order eliminate such effects, -3.3 V gate bias could be applied, whereas strong may...

Abstract GaN power transistors are attracting increasing attention for next-generation switching applications. However, should not be regarded as a direct replacement silicon metal–oxide–semiconductor field-effect transistors, since the unique properties of require special treatment. In this work we review and critical property dynamic threshold voltage ( V th ). feature p-GaN gate structure, while metal contacts layer through Schottky junction. This structure is distinctively different from...

The control schemes of the VSI system have been studied worldwide for many years. However, most linear methods can only achieve parts performance requirements. This paper presents a novel strategy that combines multiple-resonant sliding-mode controller (MRSMC) with variable-band hysteretic modulator three-phase grid-connected voltage source inverter (VSI) an LCL-filter. has fast dynamic response, good steady-state and strong robustness. mathematical model is obtained third-order designed to...

滑模变结构控制是一种在宽工作范围具有快速响应和高稳定性的鲁棒控制, 因而被广泛地应用于逆变器控制中. 滑模控制的逆变器本质上是一种由非线性控制方式控制的时变非线性系统, 具有复杂的动力学行为. 本文以基于脉冲宽度调制的滑模变结构控制的一阶H桥逆变器为例, 首先观察不同滑模变结构控制器参数下系统的输出波形, 发现了一种多种倍数的倍周期同时存在的新型分岔现象; 其次, 使用频闪映射方法建立系统的离散迭代模型, 并利用折叠图法分析输出波形. 通过分析可知系统不能以这种新型分岔为道路通向混沌. 此外, 在工程应用中十分关心系统稳定性, 但是由于滑模变结构控制器的非线性特性, 常规解析方法都已不再适用于对系统进行分析, 而图解法又难以满足精度要求. 因此, 本文提出了一种新的适用于滑模变结构控制的逆变器的快变尺度稳定性的判断依据, 经验证该判据可以准确地判断系统是否处于稳定运行状态, 进而为滑模变结构控制器的参数设计提供可靠依据.

During the switching performance evaluation for Si-based power devices, gate driver IC's are commonly neglected because of Si device's slow speed. GaN transistors, with much smaller intrinsic capacitances, would enable faster speed and higher frequency. Consequently, largely impact as well dead-time transistor. In previous works, however, IC used to drive transistor have been ignored in circuit simulation, leading lower modeling accuracy. consideration lack critical design parameters, along...

This paper introduces a simple and reliable gate drive scheme which could effectively solve the negative voltage undershoot at terminal of SiC device during turnoff process Dual-Active Bridge (DAB) topology. Through inserting diode magnetic bead into classic circuit, be formed. The operating principles proposed divided four stages described in details, consideration complementary switch phase-leg as well circuit. effectiveness circuit validated on SiC-based double pulse tester under working...

With the development of renewable energy, grid-connected H-bridge inverter plays a more important role than ever. However, dead-time and zero crossing clamping (ZCC) effect caused by can cause THD problem. As consequence, researches have focused on this issue. Most use harmonics to replace dead-time, which ignores ZCC effect. Some other average current distinguish effect, is not accurate enough. This paper analyzes whole changing process inductor ripples during power cycle complete...

As an important part of the distributed power generation system, grid-connected inverter has been widely used. However, as a time-varying nonlinear complex dynamic behavior, which can cause serious stability problem. consequence, more and researches have focused on this issue, most are limited to problem caused by variations controller parameters, input voltage or load. This paper analyzes respectively factors that may lead instability such harmonic amplitude, order, inductor saturation...

Gallium Nitride (GaN) transistors are emerging as promising candidates for making high-frequency, low-loss and small-size power converters. To realize normally-off, p-GaN gate technique is widely adopted in commercially available GaN-based devices. However, owing to the distinctions device structure, intrinsic capacitances with regard region vary from those of Si MOSFET. Besides, drain-bias rising, variation region's net charge could make threshold voltage GaN transistor unstable. Thus,...

A fast Thvenin equivalent model for IGBT considering the dynamic performance of both and antiparallel diode based on datasheet is proposed to increase efficiency power electronics transient simulation. In this paper, conducting details an with switch are represented by a fixed topology equivalent: voltage source in series constant resistance. For first time, three devices intergrated inside one model, device dynamically alternative among statuses: IGBT, open circuit, reflected changeable...

In the zinc oxide (ZnO) varistor characteristics testing, high tracking precision and stability are required both for output voltage load current, while is severely nonlinear. this paper, a three-loop control strategy combining PI Quasi-PR compensator presented. Firstly, inner-loop controls inductor current using controller to suppress bias direct (DC) flowing through transformer. Secondly, middle-loop improve sinusoidal waveform control. Finally, outer-loop DC component of ZnO feedback loop...

Grid-connected inverter system is recognized as a time-varying nonlinear system, and it has complex behaviors in practice. However, the introduction of dead-time nonlinearity can make more harder to predict. In this paper, proportional control single-phase grid-connected with L-filter considering investigated. The observation current waveforms under fixed controller parameter different parameters shows that bifurcation phenomenon occurs increase dead-time. According features zero clamping...

The Thévenin equivalent model for half-bridge modular multilevel converters on electromagnetic transient simulation, applying 2-state resistances to represent switches and adopting Dommel's algorithm get a discretized capacitance in each submodule, achieves good central processing unit time saving while maintaining the identity of every submodule. But large number changeable still brings computational challenge simulation efficiency, because admittance matrix gets an equaled size amount...

The p-GaN gate power HEMT exhibits a dynamic threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) during device operation, i.e. its V is mathematical function of the terminal bias. Vth phenomenon can be accurately predicted by charge storage mechanism. floating layer stores negative charges switching operating, and requires an additional bias to counteract these charges. has profound impacts upon circuits. It affects...