With a good balance between power transfer distance and efficiency, wireless (WPT) using magnetic resonant coupling is preferred in many applications. Generally, WPT systems are desired to provide constant output voltage with the highest possible efficiency as supplies. However, not achieved by reported closed-loop that maintain against load variations. In this paper, an evaluation method put forward evaluate control schemes. Furthermore, maximum point tracking scheme proposed maximize...

Maximum efficiency point tracking (MEPT) control has been adopted in state-of-the-art wireless power transfer (WPT) systems to meet the demands with highest against coupling and load variations. Conventional MEPT implementations use dc/dc converters on both transmitting receiving sides regulate output voltage maximize system at expense of increased overall complexity losses converters. Other phase-shift or on-off side inverter active rectifier instead but cause new problems, e.g., hard...

Pulse density modulation (PDM) is an advanced technique for maximum efficiency point tracking of wireless power transfer (WPT) systems. By using PDM, both voltage regulation and maximization can be achieved without dc/dc converters. PDM also compatible with the dual-side soft switching that utilizes resonant tanks synchronous rectification. However, this depends on coupling load conditions. Hard may occur when coils gets stronger or equivalent not properly controlled. To eliminate dependence...

Gallium nitride high electron mobility transistors (GaN HEMTs) are promising switching devices in high-efficiency and high-density dc–dc converters due to their fast speed small conduction resistance. However, GaN HEMTs very sensitive parasitic inductance because of speed, low-threshold voltage, driving safety margin. Parasitic can cause severe voltage overshoot ringing, which may result electromagnetic interference issues, false turn-on, or even device breakdown. This paper aims at reducing...

This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The may cause sustained oscillation, resulting overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate saturation region when they conduct reversely during dead time. Under influence parasitic parameters, GaN-based circuit exhibits positive feedback under certain conditions, thus, oscillation. A small-signal model...

This paper proposes an improved analytical switching process model to calculate the loss of low-voltage enhancement-mode Gallium Nitride high-electron mobility transistors (eGaN HEMTs). The presented eGaN HEMTs models are more or less derived from silicon MOSFETs models, whereas different three aspects: higher speed, much reduced parasitic inductance in loop, and absence reverse recovery. Applying traditional results inaccurate prediction waveforms losses. proposed considers effect...

This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two SiC MOSFETs with the proposed only require single standard driver to achieve during both steady-state switching transition. Moreover, is composed ten passive components. Therefore, provides low-cost highly reliable method increase blocking MOSFET. The operation principles are...

A novel dynamic modeling method based on the concept of coupled modes is proposed for wireless power transfer (WPT) systems which use magnetic resonant coupling. The aims dynamics overall WPT system, including nonlinear inverter and rectifier. It uses slowly varying amplitudes phases rather than currents voltages to describe resonances. Three analytical models-averaged model, small signal conductance network model are developed sequentially by using method. orders models equal or lower that...

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary study characteristics, which requires measuring current. However, have a fast speed and sensitive parasitic parameters, so current measurement should high bandwidth not introduce excessive inductance into converters. Traditional measurements difficult meet these requirements, especially devices. This paper...

Tight voltage regulation and high efficiency are fundamental objectives of wireless power transfer systems (WPTSs) as supplies. Although the well-established impedance matching control attempts to achieve efficiency, associated extra dc-dc converters or hard switching in WPTSs reduce overall system particularly for high-power applications. In this article, under zero (ZVS) conditions, minimum loss point is derived proved detail with different ZVS angles. Moreover, a joint variable angles...

The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has a more serious voltage overshoot than the insulated gate bipolar (IGBT) due to fundamental differences of devices’ parasitic parameters. In this paper, novel low-inductance packaging structure for wire-bond-based multichip phase-leg SiC MOSFET module suppress is proposed. This based on adjacent decoupling concept achieved by several capacitors reduce size commutation loop. improvement in parasitics been...

Compared with silicon and carbide devices, the unique electrical structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme high-voltage lateral GaN HEMT dies without bonding wires. Based on proposed scheme, compact 650 V/30 A low parasitic parameters thermal performance is designed. The are sandwiched between two ceramic substrates to improve...

To fully take the high-frequency advantage of gallium nitride (GaN) devices, this article presents a face-up integrated power module based on printed circuit board embedding technology to tackle challenges caused by conventional discrete solutions. The proposed GaN highly integrates GaN-bare-dies-based full bridge, driving circuits, and decoupling capacitors, in which advanced bismaleimide-triazine material is used as packaging copper-filled laser microvias are for low-parasitic-inductance...

In MHz and high current applications, planar transformers face problems such as significant winding loss limited current-carrying capacity, which seriously restrict converter's efficiency power density improvement. This paper proposes a fractional-turn transformer structure embeds key devices into the transformer. The proposed method can significantly shorten length, thus reducing losses. At same time, integration of effectively reduce overall volume converter eliminate terminal analysis...

The Two-Switch Buck-Boost converter (TSBB) has the advantages of low switching loss and wide voltage regulation range. It is widely used in various fields such as renewable energy system. TSBB will work DCM state under light load. At this time, using three mode control method cause oscillation problem. In paper, gain derived. output problem caused by failure realization with three-mode analysed. Finally, a suitable for proposed, which can achieve any required solve A 800-W prototype...

The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate for the new-generation power electronics systems with higher efficiency and density. However, due to unique reverse characteristics, voltage drop of GaN HEMTs is much than that diode. deadtime loss in GaN-based bridge converters will be comparable switching losses if not optimized. To optimize efficiency, this article proposes an accurate analytical model HEMTs, including circuit's parasitic...

As an important development direction of power electronic systems, the integration technologies can bring many benefits, such as size reduction, reliability improvement, cost saving and so on. With continuous semiconductor devices, especially emergence wide band-gap more advanced are needed. This paper reviews state-of-art technologies, including active passive technologies. Active technology is reviewed in terms interconnect, packaging material, structure, module integration. Passive from...

The synchronous rectifier (SR) turn-off time should be accurately controlled to achieve zero voltage switching (ZVS) while minimizing circulating current in pulsewidth modulation converters operating at critical conduction mode. Traditionally, the zero-crossing of inductor needs detected, and optimal SR is set with reference signal. However, problems such as nonlinearity delay need dealt with, these make tuning process very time-consuming high frequencies. Moreover, accurate zero-current...

The closed-loop control of wireless power transfer (WPT) systems requires a communication link between the transmitter and receiver for dual-side cooperation. Near-field techniques that utilize are preferred this purpose due to high reliability security. In letter, we propose frequency-modulated phase shift keying (FMPSK) technique maximum efficiency point tracking (MEPT) WPT. uses very shallow modulation depth minimize disturbance on flow reduce drop caused by PSK. Meanwhile, it ensures...

Reducing parasitic inductances are critical for improving efficiency and safety in Gallium Nitride (GaN) based DC-DC Converter. This paper aims at reducing the driver loop inductance power by optimizing PCB layout. Firstly, this compares three different kinds of layouts Maxwell 3D simulation. The results show that single-layer layout with a shielding layer double-layers much smaller than conventional Then novel doublesided is proposed, which has small because magnetic field significantly...

Wireless Power Transfer (WPT) brings convenience and safety in many applications serves as a research hot spot recently years. Magnetic resonant coupling is widely implemented WPT such mobile devices electric vehicles where large distance, power amount high efficiency are the three key requirements real application. However, there always trade-offs between these even theory. Former literatures failed to illustrate complete relationships requirements. Based on phasor analysis, this paper...

The low coupling coefficient is the main reason that results in difficulties to design a high performance mid-range wireless power transfer (WPT) system which uses magnetic resonant coupling. advantages of improving are quantitatively discussed this paper. It highlighted only method reduce sensitivity frequencies. Furthermore, paper proposes improves by optimizing structure coils. optimization pair spiral coils presented. has much lower computation cost than finite element analysis (FEA) and...

This paper proposes an improved switching loss model for a 650V enhancement-mode gallium nitride (GaN) transistor. The interpolation fitting method is used to fit the strong nonlinear capacitance and transconductance, it shows better accuracy than given function or polynomial method. Meanwhile, because input has relationship with gate-source voltage weak drain-source voltage, this uses Qc-Vgs curve instead of Ciss-Vds in proposed improve accuracy. parasitic inductance also considered model....

This paper presents a compact double-sided cooling Gallium Nitride (GaN) power module with low parasitic parameters. The GaN bare dies are sandwiched between two ceramic substrates high thermal conductivity to achieve efficient capability. Through careful design and layout optimization, the bus decoupling capacitors core drive components successfully integrated into reduce critical characteristics of analyzed optimized. Finally, double-pulse-test platform is built based on presented 650V/30A...