The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate for the new-generation power electronics systems with higher efficiency and density. However, due to unique reverse characteristics, voltage drop of GaN HEMTs is much than that diode. deadtime loss in GaN-based bridge converters will be comparable switching losses if not optimized. To optimize efficiency, this article proposes an accurate analytical model HEMTs, including circuit's parasitic...

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the is to stack two switches up down cooling system decoupling circuit inside module. structural characteristics realize co-optimization switching performance, management, electromagnetic interference (EMI) issue SiC module, which effectively solve contradiction in optimization performance. In addition, by optimizing...

Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, temperature range existing models SiC MOSFETs below 175°C, which cannot fulfill requirements high-temperature applications. This study proposes an analytical model over wide 25 to 475°C. First, proposed device-level improves accuracy by considering temperature-dependent channel transfer and output characteristics, body diode forward characteristic,...

Compared with silicon insulated-gate bipolar transistor, carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) presents good features that it clearly shows on its switching and thermal performance. However, the fast speed of SiC mosfet makes much more difficult for solving dynamic voltage imbalance problem caused by parameter fluctuations mosfets drive circuits when they are connected in series. This article proposes an effective gate circuit balancing control method to...

Due to the outstanding material properties, silicon carbide (SiC) power device is most promising alternative devices and can work at higher junction temperature. However, existing packaging technologies obstruct use of SiC high temperature impede continued exploration in high-temperature applications. This article proposes a novel hermetic metal method called compact-interleaved package. The module handles mentioned problems from three key considerations: parasitic parameters, direct...

SiC power semiconductor devices exhibit the potential to operate at high temperatures; however, research regarding their high-temperature characteristics is currently insufficient. By using a experimental platform, temperature-dependent of diodes in an ultra-wide temperature range 25–425 °C are studied this article. Two bipolar phenomena discovered and thoroughly studied, that is, reverse recovery "high dramatic increase (HTDI)" MOSFET body diode (MBD) transition (HTBT)" Schottky barrier...

With the development of high-temperature packaging technology, silicon carbide (SiC) MOSFETs can operate under conditions with junction temperatures exceeding 175℃, providing a solution for pulsed power applications facing instantaneous high currents and significant temperature fluctuations. However, electro-thermal coupling behaviors safe operating area (SOA) SiC in wide range are unclear, there is lack guiding principles module heat dissipation design applications. In this paper, an model...

Current sense resistor (CSR) is widely used due to cost and integration considerations in industrial applications. However, when CSRs are transient currents caused by power device switching, especially fast-switching silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) with high di/dt, even a tiny parasitic inductance bring significant impact on its sensing performance. This article proposes low-cost well-performance easy-to-design current circuit that uses the...

The impact of high-k (HK) PDA anneal temperature (T) on FinFET reliability is studied comprehensively. Reducing the improves performance, but degrades BTI, HCI and TDDB. For prefactor increases voltage acceleration reduces for lower temperature, while time slopes remain unchanged. charge trapping behavior. TDDB, shows weak modulation to temperature. due PFET. underlying physical mechanism correlated IL thickness HK crystallinity. Mitigation by post gate stack thermal budget optimization presented.

Compared with Si power devices, SiC devices have obvious performance advantages. Despite that the development of device manufacture is developing rapidly in recent years, maximum voltage rating existing commercial MOSFET still only 1.7kV. In some high applications, series-connected required to increase rated MOSFETs. Fast turn-on and turn-off speed MOSFETs reduce switching losses, but also makes dynamic imbalance problem series more serious. this paper, solve problem, a cost-effective gate...

Wide bandgap semiconductors show superior material properties enabling silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) present good features on its switching speed and withstand voltage. However, the high voltage fast characteristics of SiC MOSFETs also put forward new requirements for measurement, that is, bandwidth under conditions. This article proposes a divider structure proactive parameter design compensation network to build sensing circuit. utilizes...

High conversion ratio is a remarkable feature for future several applications, non-isolated high step-down DC-DC power electronic converter proposed to meet these demands. The presented topology has novel transformer-less structure with gain based on an active switched-capacitor cell and switched-inductor cell. main merits are low voltage stress across the switches, its number of devices medium when compared other similar that provide ratio, theoretically analysis operating principle in...

In high voltage applications, multilevel converters and series-connected power devices are two effective ways to improve the blocking capability. When connecting SiC MOSFETs in series, due its fast switching speed, dynamic imbalance problem is hard tackle. Compared with other methods, capacitive coupling gate drive circuit has a simpler structure faster response suitable for MOSFETs. However, driving capability of this approach directly affected by DC-bus voltage, it difficult achieve...

The active rectifier technology is commonly adopted in wireless power transfer system (WPTS) for improving efficiency. However, requires complicated phase-locked method to provide synchronization signal pickup side controller. In this paper, A new relatively simple and reliable has been proposed WPTS based on the semi-bridgeless (S-BAR) with double-sided LCC compensation, which doesn't need detect current resonant. Moreover, an improved control strategy also phase locked method, can regulate...

A non-isolated high step-down voltage conversion ratio DC-DC topology is introduced in this paper. The proposed converter has a two-phase interleaved buck on its output side, the meantime, having switched-capacitor based Dickson charge pump input novel integrates two-stage and buck, which makes active switches reduced by half. Therefore, combines advantages of it these features gain, low stress across current ripple. It very suitable for applications required gain power density. hardware...

Considering the potential for extreme temperature applications, temperature-dependent static characteristics and dynamic performance of Silicon carbide (SiC) power diode are carried out over a wide range 25°C∼425°C in this paper. The forward SiC MOSFET's body (MBD) Schottky barrier (SBD) measured analyzed. Then, high-temperature double pulse test platform is constructed to clarify relationship between reverse recovery process junction temperature, internal physical mechanism related these...

The reverse recovery characteristics of 1.2-kV SiC MOSFETs' body diode have been measured based on the hightemperature experimental platform in a wide range 25 °C to 400 °C. In order explore physical mechanisms inside device, 2D TCAD numerical simulations carried out and device structure models were calibrated. A new model carrier lifetime that considers sharp increase near 225 was developed. Simulation results verified there are two reasons leading mutation phenomenon at high temperature:...

The theoretical operating temperature of Silicon Carbide power semiconductors is much higher than that traditional silicon semiconductors. Due to mismatched packaging and integration technologies, there a lack research on the characteristics unipolar semiconductor over wide range, which hinders development electronic technology towards high density. In this paper, bipolar planar MOSFET Schottky diodes as typical devices at extremely temperatures are discovered investigated, based static...

Accurate nonlinear capacitance measurement methods play an important role in the modeling of silicon carbide (SiC) MOSFET for transient switching analysis and design high performance power electronics equipment. This paper presents improved method, which can obtain transfer Crss SiC accurately. method is based on time-domain reflectometry theory during dynamic process, easy to be captured. Different from other existing methods, influence gate-drain stray caused by PCB wiring probes...

In order to expand the application of SiC MOSFET in a wide temperature range, performance from 25°C 425°C is studied this paper by taking 1.2 kV QPM3-1200-0013D as an example. Different device characteristics given data sheet or previous articles at only three discrete temperatures below 250°C, temperature-dependent static MOS-FET are remeasured and nonlinearly characterized range paper. addition, considering improvement effect Schottky barrier diode on reliability MOSFET's body diode, also...

In recent years, in order to meet the huge demand for electricity brought about by economic development, many ultra-high voltage project lines China have been built one after another, alternating vertically and horizontally, gradually forming a large-scale high-voltage trunk line network. transmission world, there is lack of relevant standards operational experience. Lightning strikes as most profound influence on stable operation current line. This paper conducts an in-depth study how...

This paper investigates the thermal performance of silicon carbide (SiC) power device/module in high-temperature environments from two aspects: cooling system and interconnection layer. Based on a double-sided module with high density operating temperature, experiments simulations are conducted relationship between methods capacity SiC converters. The results show that increasing heat transfer area is an effective way to improve capacity. With state-of-the-art technology, air-based impinging...