Yongmei Gan

ORCID: 0000-0003-1277-0208
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Silicon Carbide Semiconductor Technologies
  • Petri Nets in System Modeling
  • Formal Methods in Verification
  • Advanced DC-DC Converters
  • Distributed systems and fault tolerance
  • Multilevel Inverters and Converters
  • Electromagnetic Compatibility and Noise Suppression
  • Advancements in Semiconductor Devices and Circuit Design
  • Real-Time Systems Scheduling
  • Microgrid Control and Optimization
  • Advanced Battery Technologies Research
  • Power Systems and Renewable Energy
  • Semiconductor materials and devices
  • Flexible and Reconfigurable Manufacturing Systems
  • Wireless Power Transfer Systems
  • GaN-based semiconductor devices and materials
  • Simulation Techniques and Applications
  • Electrostatic Discharge in Electronics
  • Advancements in Battery Materials
  • Industrial Technology and Control Systems
  • Power Transformer Diagnostics and Insulation
  • Stability and Control of Uncertain Systems
  • Adaptive Control of Nonlinear Systems
  • Induction Heating and Inverter Technology
  • Advanced Sensor and Control Systems

Xi'an Jiaotong University
2013-2024

Hebei University
2024

Rice Research Institute
2024

Guangdong Academy of Agricultural Sciences
2024

State Key Laboratory of Electrical Insulation and Power Equipment
2021-2023

Affiliated Hospital of Guilin Medical College
2011

Zhaotong University
2002

Cu clip-bonding is a promising packaging method for lower resistance, inductance, and higher reliability than wire-bonding. Previous studies only simply replace bond wires with clips on an individual die. However, current sharing thermal coupling issues among multichip modules are still big challenges in the clip-bonded silicon carbide (SiC) <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> power module. In this article, novel source...

10.1109/tpel.2022.3141373 article EN IEEE Transactions on Power Electronics 2022-01-07

The bidirectional CLLC resonant converter has distinguished potential in battery chargers and energy storage systems for its advantages soft switching power flow capability. However, traditional converters generally adopt symmetrical design to maintain characteristics, which means the secondary <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> network is designed be equal primary after reflection. only suitable voltage grade matching...

10.1109/tpel.2022.3170101 article EN IEEE Transactions on Power Electronics 2022-04-26

The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate for the new-generation power electronics systems with higher efficiency and density. However, due to unique reverse characteristics, voltage drop of GaN HEMTs is much than that diode. deadtime loss in GaN-based bridge converters will be comparable switching losses if not optimized. To optimize efficiency, this article proposes an accurate analytical model HEMTs, including circuit's parasitic...

10.1109/tpel.2020.3044083 article EN IEEE Transactions on Power Electronics 2020-12-11

Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, subjected repetitive thermo-mechanical stress caused by mismatch coefficient thermal expansion between different layers materials. Moreover, relatively smaller die size SiC chips makes heat flux increase significantly, which brings new challenges management and reliability modules. To tackle these challenges, this article proposes a enhanced...

10.1109/tpel.2021.3125329 article EN IEEE Transactions on Power Electronics 2021-11-08

For bidirectional <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CLLC</i> resonant converters, synchronous rectification (SR) is a key technique that can reduce the conduction losses in rectifying side by replacing diodes with switches' channel. However, existing methods suffer from either complex hardware, or incomplete and imprecise control effect. Aiming at solving these problems, this article proposes digital sensorless SR algorithm...

10.1109/tpel.2021.3116211 article EN IEEE Transactions on Power Electronics 2021-09-28

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the is to stack two switches up down cooling system decoupling circuit inside module. structural characteristics realize co-optimization switching performance, management, electromagnetic interference (EMI) issue SiC module, which effectively solve contradiction in optimization performance. In addition, by optimizing...

10.1109/jestpe.2022.3210440 article EN IEEE Journal of Emerging and Selected Topics in Power Electronics 2022-09-27

Due to the excellent silicon carbide (SiC) material characteristics, SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s can operate at extremely high temperatures and be used in harsh environment applications. In this case, it is crucial ensure reliability of power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been for online junction temperature monitoring monitor health condition low (<175...

10.1109/tpel.2023.3267472 article EN IEEE Transactions on Power Electronics 2023-04-17

Silicon carbon (SiC) metal-oxide semiconductor field-effect transistors ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOSFET</small> s) and SiC/Si cascode devices are two popular normally- xmlns:xlink="http://www.w3.org/1999/xlink">off</small> SiC power devices. In terms of the rated voltage current a single chip, there always some counterparts for s. Thus, can substitute each other in many fields. However, it is not clear which more suitable...

10.1109/tie.2021.3070519 article EN IEEE Transactions on Industrial Electronics 2021-04-14

Due to the outstanding material properties, silicon carbide (SiC) power device is most promising alternative devices and can work at higher junction temperature. However, existing packaging technologies obstruct use of SiC high temperature impede continued exploration in high-temperature applications. This article proposes a novel hermetic metal method called compact-interleaved package. The module handles mentioned problems from three key considerations: parasitic parameters, direct...

10.1109/tpel.2022.3198835 article EN IEEE Transactions on Power Electronics 2022-08-15

In high-load-current <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LLC</i> dc–dc converter, synchronous rectification (SR) is usually used to reduce the secondary loss. As a lossless, low-cost, and small-volume SR control strategy, drain–source voltage of switches sensing method widely in industrial applications. However, when load current increases, ringing across during O stage more severe reaches zero eventually. When around...

10.1109/tpel.2022.3194588 article EN IEEE Transactions on Power Electronics 2022-07-28

To achieve the desired current capability, insulated gate bipolar transistor (IGBT) modules are normally composed of parallel chips. The bond wires fatigue on a certain chip will gradually cause performance power module to degrade, and eventually lead an unexpected catastrophic failure entire system. Therefore, this article proposes in situ diagnosis method for multichip IGBT based newly defined characteristic parameter. By sensitivity analysis, horizontal comparison, experimental test,...

10.1109/tpel.2023.3253164 article EN IEEE Transactions on Power Electronics 2023-03-06

We consider discrete-event systems consisting of parallel arrays machines and buffers. The are divided into groups in each which the members have identical structure, i.e. same state set isomorphic transitions. This feature allows event relabelling a given group to standard prototype machine. In these systems, avoid underflow or overflow buffers, controller needs only information total numbers components at workpieces By exploiting structure group, we extract such control from functions...

10.1080/00207179.2016.1216607 article EN International Journal of Control 2016-07-28

A nonisolated bidirectional dc–dc converter is proposed for energy storage systems in this article. The composed of three active switches, two synchronous rectifiers, clamping capacitors, and inductors. has advantages being a simple structure, fewer number components, common ground, lower voltage stress, wide gain range. Compared with the conventional buck converters, novel triples effective duty cycle lowers stresses across switches. 300-W/500-kHz GaN-based experimental prototype built...

10.1109/tie.2021.3113015 article EN IEEE Transactions on Industrial Electronics 2021-09-30

Symmetric discrete-event systems (DESs) are composed of groups identical components (machines) and buffers. As every component in each group has the same structure, they can be relabeled to a prototype machine. With respect buffer specifications (prohibiting overflow underflow) it is shown that optimal supervisory control original DES (with many machines) reduced much smaller collection machines. sizes fixed, result small invariant supervisor which independent total number We analyze...

10.1109/tsmc.2018.2795011 article EN IEEE Transactions on Systems Man and Cybernetics Systems 2018-02-06

Recently we studied communication delay in distributed control of untimed discrete-event systems based on supervisor localization. We proposed a property called delay-robustness: the overall system behavior controlled by controllers with is logically equivalent to its delay-free counterpart. In this paper extend our previous work timed systems, which delays are counted special clock event {\it tick}. First, propose channel model and define delay-robustness; for latter, polynomial...

10.1080/00207179.2016.1147606 article EN International Journal of Control 2016-02-05

Optimal nonblocking modular supervisory control of discrete-event systems is developed using state tree structures to manage explosion. The total specification the system be controlled decomposed into several sub-specifications, and a separate optimal (maximally permissive) supervisor designed for each. Under an additional global condition we directly obtain feedback full system. If that fails, i.e. blocking, coordinator adjoined which renders behaviour, both optimal.

10.1080/00207179.2012.715754 article EN International Journal of Control 2012-08-21

As the most widely used power semiconductor devices, insulated gate bipolar transistor (IGBT) modules are normally composed of parallel IGBT chips to achieve desired current capability. However, electrothermal behavior each chip is significantly different due asymmetric layout, increasing overheating risk single chip. Therefore, this article proposes a novel approach describe thermal safe operation area multichip in inverter application, considering uneven temperature distribution among...

10.1109/tpel.2021.3124597 article EN IEEE Transactions on Power Electronics 2021-11-02

SiC MOSFETs are often used in parallel power modules to increase current capacity, but due mismatches of circuit parasitic inductance and chip parameters, there is a serious transient imbalance (TCI) between paralleled chips during dynamic processes. Thus, this article proposes screening method based on spectral clustering algorithm which comprehensively considers the differences parameters aiming optimize sharing through mutual compensation these two impacts. First, effect parameter TCI...

10.1109/apec48139.2024.10509532 article EN 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) 2024-02-25

Abstract The blocking voltage level of silicon carbide (SiC) can reach 10–25 kV, which will significantly increase the power density and capacity modules. However, high induce a electric field, risk partial discharge (PD), threaten insulation reliability. This paper focuses on triple points between metal electrode, silicone gel, ceramic in influencing factors field at different are fully analyzed. PD experiments performed results show that interface gel is weak area insulation. Therefore,...

10.1115/1.4053891 article EN Journal of Electronic Packaging 2022-02-19

Characterizing package parasitic inductance is significant for design, dynamic characteristic evaluation, thermal management, and insulation breakdown protection. As inductances become smaller the switching speed of power semiconductor becomes higher, traditional widely-used double pulse tests based on “ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$L = V/({di/dt})$</tex-math></inline-formula> ” {\rm{...

10.1109/tpel.2023.3247890 article EN IEEE Transactions on Power Electronics 2023-02-22

Voltage sags have become a very critical power quality issue in recent years. To improve the and reliability of electric power, fast solid-state transfer switch (SSTS) based on thyristors can utilize dual feeders to achieve protect sensitive loads against voltage sags. Conventional SSTS may require more than quarter cycle complete process. In this paper, starting from simplicity conventional topology, finally an improved topology has been designed paper. The proposed system greatly reduce...

10.1109/pedg.2019.8807525 article EN 2022 IEEE 13th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) 2019-06-01

A novel bidirectional <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCCL</i> resonant dc–dc converter is proposed in this article. By substituting the magnetizing inductance of xmlns:xlink="http://www.w3.org/1999/xlink">CLLC</i> with a parallel capacitor, obtains enhanced voltage gain regulation capability compared to while maintaining zero-voltage switching (ZVS) for inverting side and zero-current rectifier during power flow. The state...

10.1109/tpel.2023.3271302 article EN IEEE Transactions on Power Electronics 2023-04-28
Coming Soon ...