Nitrogen-doped $\ensuremath{\beta}\ensuremath{-}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ nanowires (GaO NWs) were prepared by annealing the as-grown in an ammonia atmosphere. The optical properties of nitrogen-doped GaO NWs studied measurements photoluminescence and phosphorescence decay at temperature range between 10 300 K. experimental results revealed that nitrogen doping induced a novel intensive red-light emission around 1.67 eV, with characteristic time 136 \ensuremath{\mu}s 77 K, much...

Cu clip-bonding is a promising packaging method for lower resistance, inductance, and higher reliability than wire-bonding. Previous studies only simply replace bond wires with clips on an individual die. However, current sharing thermal coupling issues among multichip modules are still big challenges in the clip-bonded silicon carbide (SiC) <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> power module. In this article, novel source...

Multichip SiC power modules with Kelvin-source connection are popular in applications large capacity and high switching frequency. However, dynamic current imbalance among paralleled dies due to asymmetric layout limits the available capacity. Thus, this article proposes a method mitigate mismatched by adjusting points of bonding wires copper traces. The response surface models nonlinear constrained optimization algorithms introduced for first time help determine optimized positions points....

Double-sided cooling based on planar packaging method features better thermal performance than traditional single-sided wire bonds. However, this still faces and electrical challenges in multichip SiC power modules. Specifically, one is severe coupling among parallel bare dies, the other unbalanced current sharing due to unreasonable layout design. This article aims explore potentials of devices module, which are higher capability reliability. The proposed called interleaved can get rid...

Insulated gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs) have inherent unbalanced power loss distribution and temperature swing. Some chips may become the hotspots much larger swing than others, which seriously compromises lifetime of IGBT modules. Therefore, effective improvement measures that are low cost crucial for MMC. Reverse conducting (RC-IGBT) constructs freewheel diode a single chip, has advantages lower thermal resistance, switching loss, heat...

Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, subjected repetitive thermo-mechanical stress caused by mismatch coefficient thermal expansion between different layers materials. Moreover, relatively smaller die size SiC chips makes heat flux increase significantly, which brings new challenges management and reliability modules. To tackle these challenges, this article proposes a enhanced...

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the is to stack two switches up down cooling system decoupling circuit inside module. structural characteristics realize co-optimization switching performance, management, electromagnetic interference (EMI) issue SiC module, which effectively solve contradiction in optimization performance. In addition, by optimizing...

Due to the excellent silicon carbide (SiC) material characteristics, SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s can operate at extremely high temperatures and be used in harsh environment applications. In this case, it is crucial ensure reliability of power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been for online junction temperature monitoring monitor health condition low (<175...

Insulated gate bipolar transistor (IGBT) modules are the most critical components of modular multilevel converters (MMCs). However, they subjected to repetitive thermo-mechanical stress caused by thermal cycles on different materials, which can easily lead failures in solder layers. Moreover, when MMCs work at high power factor, IGBT have severely uneven temperature distribution due inherent dc-bias arm currents. Some chips much hotter than others. These hot spots significantly reduce...

Due to the outstanding material properties, silicon carbide (SiC) power device is most promising alternative devices and can work at higher junction temperature. However, existing packaging technologies obstruct use of SiC high temperature impede continued exploration in high-temperature applications. This article proposes a novel hermetic metal method called compact-interleaved package. The module handles mentioned problems from three key considerations: parasitic parameters, direct...

Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, temperature range existing models SiC MOSFETs below 175°C, which cannot fulfill requirements high-temperature applications. This study proposes an analytical model over wide 25 to 475°C. First, proposed device-level improves accuracy by considering temperature-dependent channel transfer and output characteristics, body diode forward characteristic,...

Junction temperature is a key parameter for the safe operation of power semiconductor devices in electronic systems. However, it difficult to forecast accurate thermal stress device field use. Consequently, engineers tend use higher rated maintain excessive margin, resulting cost. In this article, transient 3-D modeling method insulated gate bipolar transistor (IGBT) modules proposed obtain distribution considering uneven losses and cooling conditions. The analytical model switching energy...

SiC power semiconductor devices exhibit the potential to operate at high temperatures; however, research regarding their high-temperature characteristics is currently insufficient. By using a experimental platform, temperature-dependent of diodes in an ultra-wide temperature range 25–425 °C are studied this article. Two bipolar phenomena discovered and thoroughly studied, that is, reverse recovery "high dramatic increase (HTDI)" MOSFET body diode (MBD) transition (HTBT)" Schottky barrier...

SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s with antiparallel schottky barrier diodes (SBDs) without reverse recovery can significantly reduce turn- xmlns:xlink="http://www.w3.org/1999/xlink">on</small> switching loss. However, this will exacerbate the oscillation during process, making electromagnetic interference problem more serious. This article analyzes influence of power module parasitic parameters on propagation...

Due to the excellent characteristics of SiC MOSFET, it is more and widely used in power electronics applications. However, device confronted with severe thermal issues due smaller chip area. Accordingly, many pieces research are aimed at better removing heat energy device. while reducing resistance, number layers inside package tends decrease, resulting a decrease its capacity. This extremely detrimental reliability module, therefore necessary comprehensively consider resistance Besides,...

With the development of high-temperature packaging technology, silicon carbide (SiC) MOSFETs can operate under conditions with junction temperatures exceeding 175℃, providing a solution for pulsed power applications facing instantaneous high currents and significant temperature fluctuations. However, electro-thermal coupling behaviors safe operating area (SOA) SiC in wide range are unclear, there is lack guiding principles module heat dissipation design applications. In this paper, an model...

This paper presents a highly integrated 650V/150A GaN power module with low parasitic inductance and high thermal performance. The bus decoupling capacitors, drive components bootstrap are successfully through proper layout, thus reducing main parameters the need for an external isolated supply. performance is achieved by sandwiching bare dies between two alumina substrates conductivity. characteristics of driver, inductance, analyzed. A double-pulse-test carried out on presented module....

Characterizing package parasitic inductance is significant for design, dynamic characteristic evaluation, thermal management, and insulation breakdown protection. As inductances become smaller the switching speed of power semiconductor becomes higher, traditional widely-used double pulse tests based on “ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$L = V/({di/dt})$</tex-math></inline-formula> ” {\rm{...

In repetitive pulse power applications, the charging capacitor time occupies most of in a period, and important parameters such as repetition rate are restricted by speed capacitor. To accelerate make full use components' capacity, novel adaptive optimization (AOC) strategy is proposed for supply (CCPS). Moreover, to improve accuracy inductor-capacitor-capacitor (LCC) model, fundamental harmonic approximation model based on continuous resonant current (CRC-FHA) put forward. Compared with...

Based on in-depth study of trust concept and factors, this paper establishes a theory framework influence factors consumers' in mobile commerce, involving seven first-level twelve second-level factors. A questionnaire evaluation commerce is designed, data collected through both online offline ways. Using the data, reliability analysis validity scale are conducted respectively. first-order confirmatory factor used to test established model for commerce. The necessity feasibility using...

Due to a series of advantages compared with other existing power converters, modular multilevel converters (MMCs)have been widely used in the last decade. However, some applications, such as offshore wind transmission, MMC submodules (SMs)are subjected harsh operating environment and adverse mission profiles which can easily lead failures solder layers IGBT modules. Therefore, lifetime estimation is very important predict reliability MMC. This paper studies fundamental-frequency thermal...