- Advanced DC-DC Converters
- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Electromagnetic Compatibility and Noise Suppression
- HVDC Systems and Fault Protection
- Microgrid Control and Optimization
- Wireless Power Transfer Systems
- Energy Harvesting in Wireless Networks
- High-Voltage Power Transmission Systems
- Induction Heating and Inverter Technology
- GaN-based semiconductor devices and materials
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Measurements
- Advanced Battery Technologies Research
- Refrigeration and Air Conditioning Technologies
- Innovative Energy Harvesting Technologies
- Semiconductor materials and devices
- Power Systems and Renewable Energy
- Islanding Detection in Power Systems
- Photovoltaic System Optimization Techniques
- Electric Motor Design and Analysis
- High voltage insulation and dielectric phenomena
- Power Line Communications and Noise
- Advanced Sensor and Control Systems
- Smart Grid and Power Systems
Xi'an Jiaotong University
2015-2024
State Key Laboratory of Electrical Insulation and Power Equipment
2008-2024
Institute of Electrical Engineering
2016-2024
Chinese Academy of Sciences
2007-2024
University of Chinese Academy of Sciences
2024
Changchun University
2024
Shanghai Electric (China)
2022-2024
Northeast Agricultural University
2015-2024
Institute of Semiconductors
2023
Nagoya University
2019-2022
With a good balance between power transfer distance and efficiency, wireless (WPT) using magnetic resonant coupling is preferred in many applications. Generally, WPT systems are desired to provide constant output voltage with the highest possible efficiency as supplies. However, not achieved by reported closed-loop that maintain against load variations. In this paper, an evaluation method put forward evaluate control schemes. Furthermore, maximum point tracking scheme proposed maximize...
This paper presents a sliding-mode control (SMC) scheme via multiresonant sliding surface for single-phase grid-connected voltage source inverter with an LCL filter to eliminate the grid current tracking error as well suppress its total harmonic distortion (THD). In general, design of SMC leads that is linear combination system state variables and generated references. The would drift while parameters change or external disturbance exists, which affects THD output seriously. Moreover, ac...
Magnetically coupled resonance wireless power transfer systems (MCR WPT) have been developed in recent years. There are several key benefits of such systems, including dispensing with cords, being able to charge multiple devices simultaneously, and having a wide range. Hence, WPT used supply the for many applications, as electric vehicles (EVs), implantable medical (IMDs), consumer electronics, etc. The literature has reported numerous topologies, structures misalignment effects, various...
Conventional hysteresis current controllers have the disadvantage of a variable switching frequency. This paper presents novel control method which uses adjacent error zero-crossing time to calculate upper/lower bandwidth after measured half period. strategy makes algorithm independent load parameters and thus it can achieve stable An improved scheme has been successfully applied single-phase three-level H-bridge voltage source inverter driving vibration test bench based on current. It...
Gallium nitride high electron mobility transistors (GaN HEMTs) are promising switching devices in high-efficiency and high-density dc–dc converters due to their fast speed small conduction resistance. However, GaN HEMTs very sensitive parasitic inductance because of speed, low-threshold voltage, driving safety margin. Parasitic can cause severe voltage overshoot ringing, which may result electromagnetic interference issues, false turn-on, or even device breakdown. This paper aims at reducing...
Compared with the state-of-the-art Si-based power devices, enhancement-mode Gallium Nitride (E-mode GaN) transistors have better figures of merit and exhibit great potential in enabling higher switching frequency, efficiency, density for converters. The bridge-leg configuration circuit, consisting a controlling switch synchronous switch, is critical component many However, owing to low threshold voltage fast speed, E-mode GaN devices are more prone false turn-on phenomenon configuration,...
This paper proposes a novel high-order passive filter, i.e., series-parallel-resonant LCL (SPRLCL) for single-phase half-bridge active power filters. The proposed SPRLCL filter consists of series resonance introduced by adding small inductor to the capacitor branch loop and parallel paralleling with gird-side inductor. Three design methods are fine tune parameters filter. Design method I II enable attenuate more switching-frequency double current harmonics than or LLCL filters, while III,...
This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The may cause sustained oscillation, resulting overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate saturation region when they conduct reversely during dead time. Under influence parasitic parameters, GaN-based circuit exhibits positive feedback under certain conditions, thus, oscillation. A small-signal model...
One promising topology for solid state transformer (SST) is a modular multilevel cascaded converter, in which submodule composed of dual active bridge (DAB) and H-bridge. For SST application PV system, the efficiency could be severely affected especially DAB due to wide voltage power range panels. Thus, motivation this paper deal with control strategy improve inside application. Instead utilizing time-domain based analysis method, requires complex modeling process, models under frequency...
This paper proposes an improved analytical switching process model to calculate the loss of low-voltage enhancement-mode Gallium Nitride high-electron mobility transistors (eGaN HEMTs). The presented eGaN HEMTs models are more or less derived from silicon MOSFETs models, whereas different three aspects: higher speed, much reduced parasitic inductance in loop, and absence reverse recovery. Applying traditional results inaccurate prediction waveforms losses. proposed considers effect...
This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two SiC MOSFETs with the proposed only require single standard driver to achieve during both steady-state switching transition. Moreover, is composed ten passive components. Therefore, provides low-cost highly reliable method increase blocking MOSFET. The operation principles are...
The concept of vehicle-to-grid has received considerable attentions over the past decade. Electric vehicle (EV), a common load dc microgrids, can serve as distributed energy storage system to improve reliability and stability microgrid, support integration renewable source, overall efficiency. In order achieve bidirectional power transmission between microgrid EV, this article proposes novel three-level CLLC resonant converter for off-board EV charger. By adding components by combining...
Wireless power transfer (WPT) is a promising way of charging electric vehicles (EVs) for its convenience, safety, physical and isolation. For satisfying the high-power application or rapid charging, WPT systems based on multiple coils are usually used. Nowadays, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCC</i> compensation commonly used topology. However, conflict between installation space limitation large volume induced by...
A novel dynamic modeling method based on the concept of coupled modes is proposed for wireless power transfer (WPT) systems which use magnetic resonant coupling. The aims dynamics overall WPT system, including nonlinear inverter and rectifier. It uses slowly varying amplitudes phases rather than currents voltages to describe resonances. Three analytical models-averaged model, small signal conductance network model are developed sequentially by using method. orders models equal or lower that...
High-frequency current harmonics injected into the point of common coupling, mainly at switching frequency and its multiples introduced by modulation grid-connected converters, should be limited to comply with grid codes. This requirement can satisfied using trap filters LC-traps tuned in replacement conventional L filters. However, all existing are subject certain problems, e.g., sensitivity impedance variation decreased high-frequency roll-off rate. In view this, this paper presents a...
Insulated gate bipolar transistors (IGBTs) are usually connected in series to form high-voltage switches power electronics applications. However, the operation of IGBTs is not easy due unbalanced voltage sharing between them, especially during switching transients and tail-current period. In this paper, a hybrid active drive presented for both loss reduction balancing series-connected IGBTs. Compared with conventional drive, proposed method allows dynamical adjustment speed IGBTs; thus can...
This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated bipolar transistors (IGBTs). In addition to the conventional (CGD) based on fixed voltage sources resistors, proposed AGD has complementary current source provide extra into gate. Specific transient stages IGBT can be therefore accelerated, leading higher speed lower loss IGBT. Additionally, turn-off overshoot controlled at preset reference value with...
Semiconductor devices based solid-state circuit breakers (SSCBs) are promising in the dc power distribution system as protective equipment for their ultrashort action time. This letter proposes a topology of SSCB using series connected silicon carbide (SiC) metal oxide semiconductor field effect transistors (mosfets), which only requires single isolated gate driver. The has very low cost and high reliability because it 13 components including passive diodes apart from two SiC mosfets to...
Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary study characteristics, which requires measuring current. However, have a fast speed and sensitive parasitic parameters, so current measurement should high bandwidth not introduce excessive inductance into converters. Traditional measurements difficult meet these requirements, especially devices. This paper...
In recent years, dc microgrids have been widely concerned for natural interface with renewable energy sources, loads, and storage systems (ESS). A novel neutral point clamped (NPC) dual-active-bridge (DAB) converter a blocking capacitor is proposed ESS in microgrids. By inserting primary loop of the traditional NPC DAB converter, voltage amplitudes across secondary windings transformer can be matched when ratio equal to 0.25, 0.5, 0.75, 1. Therefore, topology adapt wide range battery...
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has a more serious voltage overshoot than the insulated gate bipolar (IGBT) due to fundamental differences of devices’ parasitic parameters. In this paper, novel low-inductance packaging structure for wire-bond-based multichip phase-leg SiC MOSFET module suppress is proposed. This based on adjacent decoupling concept achieved by several capacitors reduce size commutation loop. improvement in parasitics been...
This paper proposes a new topology of the switched-capacitor multilevel inverter (SCMLI) for photovoltaics system, which can eliminate leakage current. In proposed topology, capacitors are employed as virtual DC power supply to boost input voltage. Here, all charging equal source, thus, just one source is needed achieve staircase waveform. this structure in order make negative levels, connected output reverse polarity. Thus, H-bridge circuit used traditional SCMLI build zero and voltage...