Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. paper reviews characteristics commercial status both vertical lateral GaN devices, providing background necessary to understand significance these recent developments. In addition, challenges encountered in GaN-based converter considered, such...

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency current normally filtered using a bulk capacitor in bus, which results low power density. However, pursuing high density converter design very important goal aerospace applications. This paper studies methods for reducing energy storage rectifiers. minimum requirement derived independently of specific topology. Based...

In a phase-leg configuration, the high-switching-speed performance of silicon carbide (SiC) devices is limited by interaction between upper and lower during switching transient (crosstalk), leading to additional losses overstress power devices. To utilize full potential fast SiC devices, this paper proposes two gate assist circuits actively suppress crosstalk on basis intrinsic properties One circuit employs an auxiliary transistor in series with capacitor mitigate loop impedance reduction....

The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering high switching-speed capability wide band-gap devices, results are very sensitive alignment voltage and current (V-I) measurements. Also, because shoot-through induced by Cdv/dt (i.e., cross-talk), switching losses nonoperating switch device in phase-leg must be considered addition operating device. This paper summarizes key issues DPT, including components layout design,...

This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The capability three types 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 °C dc bus voltages 400 750 V. It found that the can withstand current for only several microseconds voltage V temperature °C. experimental behaviors are compared, analyzed through thermal dynamic simulation....

One way to incorporate the increasing amount of wind penetration is control turbines emulate behavior conventional synchronous generators. However, energy balance main issue for be truly dispatchable by power system operator such as This paper presents a comprehensive virtual generator method full converter turbine, with minute-level storage in dc link buffer. The voltage closed-loop turbine allows it work under both grid-connected and stand-alone condition. Power achieved controlling rotor...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper presents a comprehensive analysis studying the impact of interleaving on harmonic currents and voltages ac side paralleled three-phase voltage-source converters. The performed considers effects modulation index, pulsewidth-modulation (PWM) schemes, angle. Based analysis, design passive components, such as line inductor electromagnetic interference (EMI) filter, is discussed. results...

Background —It has been hypothesized that infection with either herpes simplex virus (HSV) or cytomegalovirus (CMV) is associated atherogenesis. However, prospective data relating evidence of prior exposure to these agents risks future myocardial infarction (MI) and stroke are sparse. Methods Results —In a prospective, nested case-control study apparently healthy men, the baseline prevalence antibodies directed against HSV CMV was similar among 643 men who subsequently developed first MI...

This paper presents a Direct-Quadrature (DQ) rotating frame control method for single phase full-bridge inverters used in small hybrid power systems. A secondary orthogonal imaginary circuit is created to provide the second required transformation; thus DQ model of inverter obtained and its controller designed emulating controls three-phase converters. The proposed attains infinite loop gain coordinate, providing zero steady-state error at fundamental frequency converter. validated through...

Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits are presented. The technologies challenges for device application converter design discussed. state-of-the-art applications also reviewed.

This paper presents a control method to limit the common-mode (CM) circulating current between paralleled three-phase two-level voltage-source converters (VSCs) with discontinuous space-vector pulsewidth modulation (DPWM) and interleaved switching cycles. CM can be separated into two separate components based on their frequency; high-frequency component, close frequency, effectively limited by means of passive components; low-frequency fundamental embodies jumping observed in parallel VSCs....

This paper presents the analysis and control of a multilevel modular converter (MMC)-based HVDC transmission system under three possible single-line-to-ground fault conditions, with special focus on investigation their different characteristics. Considering positive-, negative-, zero-sequence components in both arm voltages currents, generalized instantaneous power phase unit is derived theoretically according to equivalent circuit model MMC unbalanced conditions. Based this model, novel...

Double pulse test (DPT) is a widely accepted method to evaluate the switching characteristics of semiconductor switches, including SiC devices. However, observed performance devices in PWM inverter for induction motor drives almost always worse than DPT characterization, with slower speed, more losses, and serious parasitic ringing. This paper systematically investigates factors that limit from both side side, load power cable, two phase legs three-phase comparison DPT, capacitive coupling...

As power electronics infiltrates the electric distribution and conversion systems, stability issues become increasingly significant. The risk of instability due to use constant loads stems from implementation controlled output systems. In three phase converters, these are difficult measure. Although there have been developments in determination system at interfaces stability, a framework perform measurements necessary for such has not fully developed. This paper presents method measure...

Newly emerged gallium nitride (GaN) devices feature ultrafast switching speed and low on-state resistance that potentially provide significant improvements for power converters. This paper investigates the benefits of GaN in an LLC resonant converter quantitatively evaluates devices' capabilities to improve efficiency. First, relationship device design parameters loss is established based on analytical model operating at resonance. Due effective output capacitance devices, GaN-based...

Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified normally-off using a variety of techniques. For power electronics engineer accustomed Si-based converter design, there is inherent benefit understanding the unique characteristics challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic R <sub...

In order to apply power electronics systems applications such as superconducting under cryogenic temperatures, it is necessary investigate the characteristics of different parts in systems. This paper reviews influence temperature on semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection dielectric materials, some typical converter Also, basic theories principles are given explain trends for aspects cryogenically cooled...

Advanced power semiconductor devices, especially wide band-gap have inherent capability for fast switching. However, due to the limitation of gate driver and interaction between two devices in a phase-leg during switching transient (cross talk), speed is slower than expected practical use. This paper focuses on identifying key limiting factors speed. The results provide basis improving drivers, eliminating interference, boosting Based EPC2001 Gallium Nitride transistor, both simulation...

This paper presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, assist circuit consisting two auxiliary transistors with diodes is introduced actively control voltages and loop impedances both configuration during different switching transients. Compared conventional drives, proposed has accelerating speed power suppressing...

A thermally integrated packaging structure for an all silicon carbide (SiC) power module was used to realize highly efficient cooling of semiconductor devices through direct bonding the stage and a cold baseplate. The prototype modules composed SiC metal-oxide-semiconductor field-effect transistors Schottky barrier diodes demonstrate significant improvements such as low-power losses low-thermal resistance. Direct comparisons their counterparts, which are insulated gate bipolar PiN diodes,...

GaN heterojunction field-effect transistors (HFETs) in the 600-V class are relatively new commercial power electronics. The Systems GS66508 is first commercially available 650-V enhancement-mode device. Static and dynamic testing has been performed across full current, voltage, temperature range to enable GaN-based converter design using this A curve tracer was used measure R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds-on</sub> operating...

This paper develops a synchronous generator emulator by using three-phase voltage source converter for transmission level power system testing. Different interface algorithms are compared, and the type ideal transformer model is selected considering accuracy stability. At same time, closed-loop control with current feed-forward proposed to decrease emulation error. The then verified through two different ways. First, output waveforms of in experiments compared simulation under condition....