A5115410065- Silicon Carbide Semiconductor Technologies
- HVDC Systems and Fault Protection
- High-Voltage Power Transmission Systems
- Microgrid Control and Optimization
- Multilevel Inverters and Converters
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor materials and devices
- Islanding Detection in Power Systems
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- Silicon and Solar Cell Technologies
- Power Systems and Renewable Energy
- Power Quality and Harmonics
- Power Systems Fault Detection
- Heat Transfer and Optimization
- Superconductivity in MgB2 and Alloys
- Advanced ceramic materials synthesis
- Semiconductor materials and interfaces
- Magnetic Properties and Applications
- Induction Heating and Inverter Technology
- Photovoltaic System Optimization Techniques
- Thermal Analysis in Power Transmission
- Power System Optimization and Stability
- Wind Turbine Control Systems
- Solar Radiation and Photovoltaics
Huazhong University of Science and Technology
2022-2025
Shanghai Dianji University
2024
State Key Laboratory of Advanced Electromagnetic Engineering and Technology
2024
Huazhong University of Science and Technology Hospital
2023
Electric Power Research Institute
2019-2022
University of Tennessee at Knoxville
1997-2017
Knoxville College
2016
Zhejiang University
2010-2011
Overcurrent protection of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack practical knowledge. This paper presents three overcurrent methods improve the reliability and overall cost SiC MOSFET-based converters. First, solid-state circuit breaker (SSCB) composed primarily by Si IGBT commercial gate driver IC is connected in series with dc bus detect clear faults. Second, desaturation technique using sensing diode drain-source...
This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The capability three types 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 °C dc bus voltages 400 750 V. It found that the can withstand current for only several microseconds voltage V temperature °C. experimental behaviors are compared, analyzed through thermal dynamic simulation....
This paper presents an active gate driver (AGD) for IGBT modules to improve their overall performance under normal condition as well fault condition. Specifically, during switching transients, a di/dt feedback controlled current source and sink is introduced together with push–pull buffer dynamic control. Compared conventional drive strategy, the proposed one has capability of reducing loss, delay time, Miller plateau duration turn-on turn-off transient without sacrificing voltage stress....
This paper presents the analysis and control of a multilevel modular converter (MMC)-based HVDC transmission system under three possible single-line-to-ground fault conditions, with special focus on investigation their different characteristics. Considering positive-, negative-, zero-sequence components in both arm voltages currents, generalized instantaneous power phase unit is derived theoretically according to equivalent circuit model MMC unbalanced conditions. Based this model, novel...
This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for high temperature and density application. Specifically, silicon-on-insulator (SOI)-based gate driver capable of operating at 200 °C ambient is designed fabricated. The sourcing sinking current capability the are tested under various temperatures. Also, 1200 V/100 A SiC phase-leg developed utilizing packaging technologies. static characteristics, switching performance, short-circuit behavior fabricated...
Featuring modularity and high efficiency, a modular multilevel converter (MMC) has become promising topology in high-voltage direct-current transmission systems. However, its distributed capacitors lead to more complicated startup process than that of two-level converter. To fully understand this issue, the charging loops an MMC rectifier inverter during uncontrolled precharge period are analyzed paper, with special focus on necessity additional capacitor schemes. Moreover, small-signal...
This paper presents a steady-state model of MMC for the second-order phase voltage ripple prediction under unbalanced conditions, taking impact negative-sequence current control into account. From model, circular relationship is found among and quantities, which can be used to evaluate magnitudes initial angles different circulating components. Moreover, in order calculate point-to-point MMC-based HVdc system grid derivation equivalent dc impedance an discussed as well. According inverter...
Modular Multilevel Converter (MMC) has proved to be an effective solution for high power applications, supplying low distorted output voltage and fault tolerance. This paper presents a detailed performance comparison between phase disposition PWM (PDPWM) shift (PSPWM) schemes under normal condition, over-modulation, as well carrier non-synchronization condition. Compared the PSPWM strategy, PDPWM smaller line-to-line distortion when frequencies are adjusted achieve same number of switch...
This article presents quick analytical prediction methods of switching loss, turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on/off</small> overvoltage, d <italic xmlns:xlink="http://www.w3.org/1999/xlink">i</i> /d xmlns:xlink="http://www.w3.org/1999/xlink">t,</i> and xmlns:xlink="http://www.w3.org/1999/xlink">v</i> xmlns:xlink="http://www.w3.org/1999/xlink">t</i> for SiC metal–oxide–semiconductor field-effect transistor based on device...
Momentum-resolved direct and inverse photoemission spectra of the $\mathrm{K}/\mathrm{Si}\left(111\right)\ensuremath{-}(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})R30\ifmmode^\circ\else\textdegree\fi{}\ensuremath{-}\mathrm{B}$ interface reveals presence strongly localized surface states. The K overlayer remains nonmetallic up to saturation coverage. This system most likely presents first experimental realization a frustrated spin $1/2$ Heisenberg antiferromagnet on two-dimensional...
The synchronous-switching dead-time optimization is critical for high-frequency silicon carbide (SiC)-based converters operating in the synchronous rectification mode. In previous research, constant input capacitance <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">iss</sub> from datasheet was typically utilized dead time optimization, which obtained with a zero gate-source voltage (...
An ultra-wide-area transmission network emulator represented by regenerative converters is developed in this paper. The are paralleled to provide and share power similar electromechanical generators. Others controlled emulate loads, such as, induction motors constant impedance, current, (ZIP) loads. structure control algorithms of these system component emulators discussed detail, the performance overall architecture presented. As well-known, motor will induce large perturbation when it...
This paper presents the development of a scaled four-terminal high-voltage direct current (HVDC) testbed, including hardware structure, communication architecture, and different control schemes. The developed testbed is capable emulating typical operation scenarios system start-up, power variation, line contingency, converter station failure. Some unique are also demonstrated, such as online mode transition re-commission. In particular, dc proposed, through regulation at one terminal. By...
Recently, several high-frequency oscillation (HFO) events have occurred in the modular multilevel converter (MMC) based HVDC (MMC-HVDC) projects, threatening safety and reliability of power systems. Existing studies only focus on HFO MMC-HVDC with grid-following control (GFWC) but less grid-forming (GFMC). Therefore, this paper establishes small-signal model GFMC through dynamic phasor method. Then, impact different parameters is discussed. Unlike GFWC, outer loop has a great influence HFO....
Two-dimensional nanosheets with a highly ordered vertical alignment in high-aspect-ratio microchannels under strong channel size confinement and high flow shear stress enable superior thermal management performance.