A5100677555- Silicon Carbide Semiconductor Technologies
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Electromagnetic Compatibility and Noise Suppression
- HVDC Systems and Fault Protection
- Metal-Organic Frameworks: Synthesis and Applications
- Crystallography and molecular interactions
- GaN-based semiconductor devices and materials
- Electrostatic Discharge in Electronics
- Polyoxometalates: Synthesis and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Microgrid Control and Optimization
- Silicon and Solar Cell Technologies
- Supercapacitor Materials and Fabrication
- Advanced Nanomaterials in Catalysis
- Induction Heating and Inverter Technology
- Advanced battery technologies research
- Advanced Battery Technologies Research
- Photovoltaic System Optimization Techniques
- Advancements in Battery Materials
- Electric Motor Design and Analysis
- High voltage insulation and dielectric phenomena
Rensselaer Polytechnic Institute
2023-2025
Yunnan University
2024-2025
Jinan University
2023-2024
Zhejiang University
2023-2024
North University of China
2023-2024
Beijing Jiaotong University
2024
Aerospace Institute (Germany)
2024
Institute of Computing Technology
2024
Tianjin University of Commerce
2023-2024
North China Electric Power University
2022-2024
In a phase-leg configuration, the high-switching-speed performance of silicon carbide (SiC) devices is limited by interaction between upper and lower during switching transient (crosstalk), leading to additional losses overstress power devices. To utilize full potential fast SiC devices, this paper proposes two gate assist circuits actively suppress crosstalk on basis intrinsic properties One circuit employs an auxiliary transistor in series with capacitor mitigate loop impedance reduction....
The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering high switching-speed capability wide band-gap devices, results are very sensitive alignment voltage and current (V-I) measurements. Also, because shoot-through induced by Cdv/dt (i.e., cross-talk), switching losses nonoperating switch device in phase-leg must be considered addition operating device. This paper summarizes key issues DPT, including components layout design,...
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits are presented. The technologies challenges for device application converter design discussed. state-of-the-art applications also reviewed.
Double pulse test (DPT) is a widely accepted method to evaluate the switching characteristics of semiconductor switches, including SiC devices. However, observed performance devices in PWM inverter for induction motor drives almost always worse than DPT characterization, with slower speed, more losses, and serious parasitic ringing. This paper systematically investigates factors that limit from both side side, load power cable, two phase legs three-phase comparison DPT, capacitive coupling...
In order to apply power electronics systems applications such as superconducting under cryogenic temperatures, it is necessary investigate the characteristics of different parts in systems. This paper reviews influence temperature on semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection dielectric materials, some typical converter Also, basic theories principles are given explain trends for aspects cryogenically cooled...
Advanced power semiconductor devices, especially wide band-gap have inherent capability for fast switching. However, due to the limitation of gate driver and interaction between two devices in a phase-leg during switching transient (cross talk), speed is slower than expected practical use. This paper focuses on identifying key limiting factors speed. The results provide basis improving drivers, eliminating interference, boosting Based EPC2001 Gallium Nitride transistor, both simulation...
This paper presents some of the key advances in power electronics pertaining to shipboard electric system applications. The focus is on emerging wide bandgap semiconductor devices, i.e., silicon carbide (SiC) and gallium nitride (GaN) their potential impact future conversion drives. Their benefits converter efficiency density are explained through a case study medium-voltage (MV) class motor drive system. SiC GaN also enable new applications, including solid-state transformers, while posing...
This paper presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, assist circuit consisting two auxiliary transistors with diodes is introduced actively control voltages and loop impedances both configuration during different switching transients. Compared conventional drives, proposed has accelerating speed power suppressing...
GaN heterojunction field-effect transistors (HFETs) in the 600-V class are relatively new commercial power electronics. The Systems GS66508 is first commercially available 650-V enhancement-mode device. Static and dynamic testing has been performed across full current, voltage, temperature range to enable GaN-based converter design using this A curve tracer was used measure R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds-on</sub> operating...
Two novel isostructural anionic lanthanide metal–organic frameworks, (Me 2 NH )[Ln(HTCBPE-F)·(HCOO)·DMF]·4.5DMF·2H O (Eu-MOF and Dy-MOF), for ultra-high proton conduction.
In recent years, Si power MOSFET is approaching its performance limits, and Gallium Nitride (GaN) HEMT getting mature. This paper evaluates the 600 V cascode GaN performance, compares it with state-of-the-art CoolMOS in LLC resonant converter. First, static characterization of described different temperatures. The switching tested by a double pulse tester to provide turn-off loss reference design Second, 400 V-12 V/300 W/1 MHz all-GaN-based converter compared Si-based CoolMOS. device output...
Double pulse tester (DPT) is a widely accepted method to evaluate the switching behavior of power devices. Considering high switching-speed capability wide band-gap (WBG) devices, test results become significantly sensitive alignment voltage and current (V-I) measurement. Also, because shoot-through induced by Cdv/dt, during transient one device, losses its complementary device in phase-leg non-negligible. This paper summarizes key issues DPT, including layout design, measurement...
Junction temperature is an important design/operation parameter, as well as, a significant indicator of device's health condition for power electronics converters. Compared to its silicon (Si) counterparts, it more critical carbide (SiC) devices due the reliability concern introduced by immaturity new material and packaging. This paper proposes practical implementation using intelligent gate drive online junction monitoring SiC based on turn- <sc...