A5085271275- Magnetic properties of thin films
- Topological Materials and Phenomena
- Ga2O3 and related materials
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Physics of Superconductivity and Magnetism
- Quantum and electron transport phenomena
- Magneto-Optical Properties and Applications
- Graphene research and applications
- Semiconductor materials and devices
- Chemical and Physical Properties of Materials
- Magnetic Properties and Synthesis of Ferrites
- Advanced Condensed Matter Physics
- Magnetic and transport properties of perovskites and related materials
- Mechanical and Optical Resonators
- Neural Networks and Reservoir Computing
University of Hong Kong
2022-2025
Hong Kong University of Science and Technology
2022-2025
In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics operating in an extremely wide temperature range (X-WTR) from 2 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler high-temperature bandgap substantially suppresses thermal excitation of intrinsic carrier. However, low-temperature side, two-dimensional electron hole gas (2DEG 2DHG) channels at...
Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of extends our understanding on the material properties. Hence, research this subject is fundamental importance and may also enable future applications energy harvesting high-frequency technology. It was shown that a dipole give rise to second-order NLAHE low crystalline...
Abstract The emerging all‐van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by electric field beyond traditional spintronics devices. One promising strategy is using unconventional spin‐orbit torque (SOT) exerted out‐of‐plane polarized spin current enable deterministic switching and enhance efficiency. However, in all‐vdW heterostructures, large SOT remains elusive robustness of field‐free against external has not been examined, which hinders...
Topological materials have shown promising potential in the spintronics application due to their conspicuous efficiency of charge-to-spin conversion. Our research investigates temperature-dependent spin–orbit torque (SOT) from sputtered WTex. We reveal a strong temperature dependence SOT and realize current-induced switching WTex with perpendicular magnetic anisotropy structure under wide range 12 K room temperature. findings may pave way for semimetals cryogenic
The p-GaN/AlGaN/GaN heterostructure, predominantly epitaxially grown on large-scale silicon wafers, has been widely used for producing consumer power switching devices and recently manifested favorable developing GaN-based complementary circuits. This work investigates the hole distribution transport in this structure based wide-temperature-range (20–600 K) Hall measurements TCAD simulations. It is revealed that p-channel thereof composed of bulk holes p-GaN two-dimensional gas (2DHG) at...
The damping parameter ${\alpha}_{\text{FM}}$ in ferrimagnets defined according to the conventional practice for ferromagnets is known be strongly temperature dependent and diverge at angular momentum compensation temperature, where net vanishes. However, recent theoretical experimental developments on ferrimagnetic metals suggest that can such a way, which we denote by ${\alpha}_{\text{FiM}}$, it free of diverging anomaly point little temperature. To further understand dependence...
The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by electric field beyond traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted out-of-plane polarized spin current enable deterministic switching and enhance efficiency. However, in all-vdW heterostructures, large SOT remains elusive robustness of field-free against external hasn't been examined, which hinder further...