A5029622450- Magnetic properties of thin films
- Magnetic Properties and Applications
- Neural Networks and Reservoir Computing
- Machine Learning and ELM
- Magneto-Optical Properties and Applications
- Topological Materials and Phenomena
- Advanced Condensed Matter Physics
- Magnetic Field Sensors Techniques
- Neural dynamics and brain function
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neural Networks and Applications
Hong Kong University of Science and Technology
2021-2024
University of Hong Kong
2021-2024
Hong Kong Science and Technology Parks Corporation
2023
Topological materials have shown promising potential in the spintronics application due to their conspicuous efficiency of charge-to-spin conversion. Our research investigates temperature-dependent spin–orbit torque (SOT) from sputtered WTex. We reveal a strong temperature dependence SOT and realize current-induced switching WTex with perpendicular magnetic anisotropy structure under wide range 12 K room temperature. findings may pave way for semimetals cryogenic
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from anisotropy nanomagnet. Such concept is particularly well-suited small junctions down to few nanometers. At such volume size, can be effectively modeled as Stoner-Wohlfarth (SW) particle, and scales with spontaneous magnetization by ~ Ms^2. For almost all ferromagnets, Ms strong function...
Neurons in the brain show nonlinear oscillatorlike behaviors, inspiring development of neuromorphic computing with spin-torque oscillators for their low power consumption and high integration density. The time-multiplexing technique enables utilizing only one device to achieve computing, further reducing simplifying fabrication. However, optimizing such systems remains a challenge needs development. A controversial hypothesis claims that dynamic possess optimal computational capacity address...
In this work, we, for the first time, demonstrate a comprehensive model of multi-level Spin-Orbit torque (SOT)-MRAM. Scalability, stochasticity, and variations SOT-MRAM are captured within unified framework based on modified Preisach hysteresis. The functionalities verified by experimental data from four types SOT devices fabricated us others, including major switching loop, minor loops, device-size dependence, variation intermediate states.