Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of GaN surface critical restriction that hinders development GaN-based devices, especially terms device stability reliability. In this study, challenge overcome by converting into gallium oxynitride (GaON) epitaxial nanolayer through an situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes chemical...

The planar nature of the GaN heterojunction devices provides extended dimensions for implementing monolithic power integrated circuits. This article presents a comprehensive review advancements in integration. Basic building blocks integration platform based on p-GaN gate HEMT technology are discussed, including high- and low-voltage transistors, lateral field-effect rectifiers, resistors, capacitors. Exemplary designs driving circuit detection/protection circuits this demonstrated....

In this work, we demonstrate a GaN-based <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {p-n}$ </tex-math></inline-formula> junction gate (PNJ) HEMT featuring an notation="LaTeX">${n}$ -GaN/ notation="LaTeX">${p}$ -GaN/AlGaN/GaN stack. Compared to the more conventional -GaN with Schottky between metal and layer, can withstand higher reverse bias at same peak electric-field as depletion region...

In this article, we systematically investigate the OFF-state drain-voltage-stress-induced threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> ) instability in Schottky-type p-GaN gate high electron mobility transistors (HEMTs). drain-voltage stress and recovery tests were conducted under various temperatures different drain biases. A sharp...

Abstract The lack of rehabilitation teachers for autistic children is common in lower-middle income countries. Designing programs to train parents become “para-rehabilitators,” that is, “lay experts,” one the ways solve this problem. purpose study was explore feelings, problems, and hopes Chinese participating parent-implemented model. Semi-structured qualitative interviews with 19 were conducted analyzed thematically. found positive changes parental understanding response autism disorders,...

Saddle point problems arise from many wireless applications, and primal-dual iterative algorithms are widely applied to find the saddle points. In existing literature, convergence results of such established assuming problem specific parameters remain unchanged during iterations. However, this assumption is unrealistic in time varying systems, as explicit message passing usually involved iterations channel state information (CSI) may change a scale comparable algorithm update period. This...

Sina Weibo (Weibo) is a fast growing microblogging social network with total user size closer to Twitter. adopts mechanism verify users, so that the public can identify true accounts of celebrities and official channels certain organizations. The verification builds trust authenticity source, hence, stimulates people actively participate on platform. However, how verifications affect behaviors in networks have never been fully investigated. This paper analyzes verifications, by comparing...

In this article, the impacts of <small>off</small>-state gate bias (<i>V</i>_GS,OFF) on dynamic <small>on</small>-resistance (<i>R</i>_ON) are systematically investigated in commercial Schottky-type <i>p</i>-GaN Gate high-electron-mobility transistors. Double-pulse tester and pulsed <i>I</i>&#x2013;<i>V</i> system adopted to evaluate <i>R</i>_ON with various drain (<i>V</i>_DS,OFF) under hard- soft-switching conditions. More negative...

The dynamics of the intrinsic threshold voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) shift in 650-V Schottky-type p-GaN gate HEMT under high-frequency switching is investigated by a bootstrap clamping circuit which GaN serves as key bootstrapping device. This new testing setup covers wide range OFF-state drain bias xmlns:xlink="http://www.w3.org/1999/xlink">DSQ</sub> up to 400V, short OFF-to-ON (or stress-to-sense)...

a novel p-GaN gate topology is proposed to inherently increase threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) and enhance V stability. The consists of conventional Schottky-type normally-on p-channel FET bridge connecting source gate. By modulating the FET, wide-range positive from 3.6 8.2 can be achieved without subthreshold degradation. Owing well-grounded through p-FET channel, stable also sacrificing low...

β-Ga2O3 has been subjected to intense research interest as an ultrawide bandgap semiconductor. The epitaxial growth technique of thin films plays a fundamental and vital role in Ga2O3-based device fabrication. In this work, the mechanisms on four low-Miller-index facets, (100), (010), (001), (2¯01), are systematically explored using large-scale machine-learning molecular dynamics simulations at atomic scale. reveal that migration face-centered cubic stacking O sublattice dominant different...

In this work, we study the gate leakage mechanisms of E-mode p- n junction/AlGaN/GaN (PNJ) high electron mobility transistors (HEMTs), which have been shown to deliver low and wide safe operating gate-bias range. The intrinsic through PNJ-gate was found be limited by transport holes p-GaN layer, occurs via Poole-Frenkel emission phonon-assisted tunneling in bias region, respectively. addition, lateral current role variable hopping process (VRH) are also discussed. Gate models based on...

In a p-channel field-effect-transistor ( p-FET) bridge HEMT device recently realized on commercial p-GaN/AlGaN/GaN-on-Si power epi-wafer, it is revealed that the device's reverse-conduction turn-on voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RT</sub> ) can be effectively decoupled from forward threshold xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> of Schottky-type p-GaN gate HEMTs. Unlike conventional HEMTs, which closely...

Distributed network utility maximization (NUM) has received an increasing intensity of interest over the past few years. solutions (e.g., primal-dual gradient method) have been intensively investigated under fading channels. As such distributed involve iterative updating and explicit message passing, it is unrealistic to assume that wireless channel remains unchanged during iterations. Unfortunately, behavior those time-varying channels in general unknown. In this paper, we shall investigate...

In this work, threshold voltage ($V _{\mathbf{TH}}$) stability under long-term off-state stress with various drain-to-source voltages was characterized in the Schottky type p-GaN gate high electron mobility transistors (HEMTs). The $V _{\mathbf{TH}}$ shows a sudden increase at very beginning of stress, which is suggested to be caused by hole-deficiency; while during keeps shifting positively until it saturates, indicating charge trapping barrier and/or buffer layer gradually dominates shifts.

Max weighted queue (MWQ) control policy is a widely used cross-layer that achieves stability and reasonable delay performance. In most of the existing literature, it assumed optimal MWQ can be obtained instantaneously at every time slot. However, this assumption may unrealistic in varying wireless systems, especially when there no closed-form solution iterative algorithms have to applied obtain solution. This paper investigates convergence behavior performance conventional iterations which...

Sina Weibo has become the most popular microblogging platform in Chinese-speaking community. Verification scheme is a distinctive element of with an aim to help public identify genuine accounts and select trustworthy information sources. Verified users are also known as "Big Vs", who identified by verification badge, capitalised letter "V" added alongside account name. By comparing statistical characteristics both verified unverified users, this paper presents that minority largely consider...

This paper considers a cross-layer optimization problem driven by multi-timescale stochastic exogenous processes in wireless communication networks. Due to the hierarchical information structure network, mixed timescale iterative algorithm is proposed track time-varying optimal solution of problem, where variables are partitioned into short-term controls updated faster timescale, and long-term slower timescale. We focus on establishing convergence analysis framework for such algorithms,...

Electroluminescence (EL) of a Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism carrier dynamics in stack. This work revealed unique bipolar injection DC-HEMT under forward bias by analyzing EL characteristics with and temperature dependence....

At cryogenic temperatures, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN high- electron-mobility transistors (HEMTs) exhibit a frozen trap effect that causes hole carriers to become trapped in long-lived states, thereby affecting carrier transport. Capacitance deep-level transient spectroscopy ( notation="LaTeX">${C}$ -DLTS) tests and analysis based on theoretical...

a bipolar p-FET (BiPFET) structure is proposed to enhance the conduction capability of GaN-based p-channel transistors that limited by intrinsically low hole mobility. In BiPFET, n-/p-/n-GaN (NPN) stack depolyed at drain side conventional p-FET, amplifying current with electrons serving as majority carriers, which possess much higher mobility than holes. By matching NPN density increases 17 times compared exceeding 100 mA/mm. Meanwhile, device control logic, high I <inf...

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of GaO devices. In this simulation work, we propose novel role for p -type available heterosubstrates, component reduced surface field (RESURF) structure in lateral field-effect transistors (FETs). The RESURF can eliminate electric crowding and contribute higher breakdown voltage. Using SiC an example, designing strategy doping concentration dimensions region is systematically using TCAD modeling. To...

<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN field-effect transistors (FETs) with a SiNx/GaON gate stack have been demonstrated enhanced stability within wide range of voltage bias and temperature. In this letter, the leakage characteristics reliability unconventional staggered are investigated. At relatively low voltages, current is suppressed owing to...

We experimentally demonstrate a GaN/SiC hybrid field-effect transistor (HyFET)—a novel power electron device that can harness the complementary merits of GaN and SiC circumvent their notorious drawbacks. The HyFET regulates currents by gating an AlGaN/GaN high-mobility 2- dimensional-electron-gas (2DEG) channel blocks voltages with vertical junction-field-effect-transistor (JFET) structure. mobility be boosted ~100 times compared to MOS-channel. vertically configured provide voltage blocking...