A5067523416- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Radio Frequency Integrated Circuit Design
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Quantum Dots Synthesis And Properties
- Advanced Power Amplifier Design
- Neural Networks and Applications
- Advanced Measurement and Detection Methods
- Optical Network Technologies
- Nonlinear Optical Materials Studies
- Image and Video Stabilization
- Advanced Memory and Neural Computing
- Indoor and Outdoor Localization Technologies
- Underwater Vehicles and Communication Systems
- Semiconductor materials and interfaces
- Neural Networks and Reservoir Computing
- Advanced Algorithms and Applications
- RFID technology advancements
University of Hong Kong
2012-2025
Hong Kong University of Science and Technology
2012-2025
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of GaN surface critical restriction that hinders development GaN-based devices, especially terms device stability reliability. In this study, challenge overcome by converting into gallium oxynitride (GaON) epitaxial nanolayer through an situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes chemical...
A hybrid field-effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide-bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, incompactness in epitaxy techniques hinders development HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially conventional 4° 4H-SiC...
Hot electrons with high kinetic energy could be generated in the channel of GaN high-electron-mobility transistors (HEMTs) during hard switching operation. Those "lucky" hot scattered to vulnerable interface between passivation and barrier layers bombard region create new defects that would lead degradation dynamic on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ON}$...
GaN-based complementary logic (CL) integrated circuits (ICs) for the prospective power integration have been demonstrated on commercial p-GaN gate HEMT (high-electron-mobility transistor) platform. This work reports a delicately designed structure featuring SiNx/in-situ-GaOxN <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> staggered stack GaN p-channel field-effect transistors ( <tex xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>...
With a switching drain bias, the gate reliability of Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN high-electron-mobility transistors (HEMTs) under AC positive bias stress has been systematically investigated. The mean-time-to-failure (MTTF) such application-relevant is found to be prolonged compared that extracted from static and tests with absence...
Enhancement-mode (E-mode) submicron 0.45- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}~{p}$ </tex-math></inline-formula> -GaN gate HEMTs on 200-mm high-resistivity-Si (HRS) substrates have been demonstrated with high uniformity and overall combined performance for RF applications. The notation="LaTeX">${p}$ HEMT exhibits a positive threshold voltage ( notation="LaTeX">${V}_{\text {TH}}$ )...
In this work, the impact ionization-induced OFF-state breakdown is revealed and systematically investigated in 100 V Schottky-type p-GaN gate high-electron-mobility transistors. Impact ionization found to occur peak electric-field region at source-terminated field-plate edge initiated by electrons injected from source-side two-dimensional electron gas channel through buffer layer. Hot generated ionization, when being captured surface traps, could lead redistribution value reduction of...
Electroluminescence (EL) of a Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism carrier dynamics in stack. This work revealed unique bipolar injection DC-HEMT under forward bias by analyzing EL characteristics with and temperature dependence....
Radio Frequency Identification (RFID) becomes a prevalent labeling and localizing technique in the recent years. Deploying indoor RFID localization systems facilitates many applications. Previous approaches, however, are most based on 2D design cannot provide 3D location information. The lack of one-dimensional information may lead 2D-based to inaccurate localization. In this paper, we develop an system active tag array. particular, employ geometric mean filter explicit with high accuracy....
A novel GaN power IC platform on engineered bulk Si (EBUS) substrate is demonstrated for monolithic integration of 200-V high-side and low-side p-GaN HEMTs a half-bridge circuit. The features P+-N-doping profile realized by P-type implantation into an N-type (111) wafer. P+ layer then split islands using deep trenches are effectively isolated through back-to-back PN junctions. island provides local electrical the overlaying HEMT, while all share same wafer; such configuration enables with...
We characterize and evaluate the RF linearity of an enhancement-mode <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate high-electron- mobility-transistor (HEMT) on a 200-mm high-resistivity-silicon substrate. Nearly flat transconductance its small derivatives, together with relatively uniform small-signal parameters within operating range, predict good performances...
We experimentally demonstrate a GaN/SiC hybrid field-effect transistor (HyFET)—a novel power electron device that can harness the complementary merits of GaN and SiC circumvent their notorious drawbacks. The HyFET regulates currents by gating an AlGaN/GaN high-mobility 2- dimensional-electron-gas (2DEG) channel blocks voltages with vertical junction-field-effect-transistor (JFET) structure. mobility be boosted ~100 times compared to MOS-channel. vertically configured provide voltage blocking...
On GaN power IC platform, the lateral p-GaN gate high-electron-mobility transistors (HEMTs) can be reconfigured as diodes in a bootstrap circuit by shorting and source anode terminal. In initial forward charging period, gate-to-drain junction of device would withstand large voltage that causes reliability concerns but remains unclear. this work, comprehensive evaluation 650-V HEMTs is conducted mode. The root cause degradation found to lie gate-metal/p-GaN Schottky at drain-side edge...
A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the characteristics, including leakage current, breakdown, and reliability under forward bias stress. It found that DC-HEMT substantially lower than single (SC-HEMT) owing to suppressed electron spillover stems from hole storage in quantum well upper channel. Consequently, breakdown voltage improved 14.7 V compared 12.2 SC-HEMT. Besides, operating margin expanded 4.2 3.3 SC-HEMT according...
We present an enhancement-mode (E-mode) <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex> -GaN gate high-electron-mobility transistor (HEMT) featuring a double-channel (DC) structure. An AlN layer (1 nm) inserted at 6 nm below the conventional -GaN/AlGaN/AlN/GaN heterojunction enables simultaneous formation of second lower two-dimensional electron gas (2DEG) channel and barrier that can block confine holes injected from overlaying...
Gallium Nitride Surface The vulnerability of the GaN surface is a critical restriction that hinders development GaN-based devices. In article number 2208960, Junting Chen, Junlei Zhao, Mengyuan Hua, and co-workers report conversion into gallium oxynitride (GaON) epitaxial nanolayer by an in situ two-step "oxidation–reconfiguration" process. metastable GaON can enhance performance devices power, logic, photoelectric applications.
A GaN on engineered bulk silicon (GaN-on-EUBS) power IC platform has been demonstrated to create isolation between high-side (HS) and low-side (LS) p-GaN gate HEMTs by implementing embedded PN junctions deep trenches in a Si substrate using mature Si-compatible processes. The design of the with respect doping concentration backside termination scheme is expected impact output capacitance (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The impact ionization induced breakdown and related high-temperature reverse bias (HTRB) behaviors are studied in 100-V Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs). It is revealed that initiated by the electrons injected from source-side through buffer layer to high electric-field (E-field) region. generated hot electrons, when being captured surface states, could lead re-distribution of E-field delay breakdown. Meanwhile, holes would transport region under gate,...
Build up the Autonomous Vehicle target uniform motion model, according to real-time static character information, give out reasonable estimation for of by improved least square algorithm, and simulate parameter estimation, then verify reliability algorithm.