Wenhao Xiong

ORCID: 0000-0002-1810-7661
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Research Areas
  • Advanced Fiber Laser Technologies
  • Ga2O3 and related materials
  • Photonic Crystal and Fiber Optics
  • Laser-Matter Interactions and Applications
  • Gold and Silver Nanoparticles Synthesis and Applications
  • ZnO doping and properties
  • Optical Network Technologies
  • Advanced Photonic Communication Systems
  • Advanced biosensing and bioanalysis techniques
  • Advanced Photocatalysis Techniques
  • Biosensors and Analytical Detection
  • Electronic and Structural Properties of Oxides
  • Advanced Fiber Optic Sensors
  • GaN-based semiconductor devices and materials
  • Plasmonic and Surface Plasmon Research
  • Nanocluster Synthesis and Applications
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Advanced Nanomaterials in Catalysis
  • Solid State Laser Technologies
  • Quantum Dots Synthesis And Properties

Wuhan University of Technology
2022-2024

Beijing University of Technology
2019-2023

University of Science and Technology of China
2019-2021

In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the without annealing (PND) and (APND) are studied systematically. APND device has lower specific on-resistance 4.1 mΩ cm2, compared to that PND, 5.4 cm2. Moreover, for APND, high breakdown voltage 1630 V leakage current is achieved, which 730 higher than PND. enhanced performance leads record power figure merit 0.65 GW/cm2 in...

10.1063/5.0038349 article EN Applied Physics Letters 2021-01-25

In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting...

10.1109/led.2019.2926202 article EN IEEE Electron Device Letters 2019-07-01

This work demonstrates vertical <inline-formula> <tex-math notation="LaTeX">$\boldsymbol {\beta } $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) breaking through the power figure of merit 1 GW/cm<sup>2</sup> without edge termination. The unreliable surface on top notation="LaTeX">$\sim {1.2}\times {10} ^{{16}}$ </tex-math></inline-formula> cm<sup>&#x2212;3</sup> drift region, which naturally formed in air, was removed by inductively coupled plasma...

10.1109/led.2021.3133866 article EN IEEE Electron Device Letters 2021-12-08

This work reports a β-Ga2O3 double-barrier Schottky barrier diode (DBSBD) with both low turn-on voltage and reverse leakage current by using Ni PtOx as the anode electrode. The height of PtOx-based can be effectively modulated from 1.26 to 1.62 eV adjusting oxygen pressure during sputtering processes. Combining maximum function electrode optimization ratio PtOx, DBSBD an diameter DNi /DPtOx = 75/150μm not only exhibits high forward 470.9 A/cm2 (at 3.5 V), on-resistance 4.1 mQ ·cm2 1.13 V,...

10.1109/led.2021.3055349 article EN IEEE Electron Device Letters 2021-01-28

In this paper, we report a new method to generate tunable high-repetition-rate temporal cavity solitons (TCSs) in nonlinear fiber cavity, which is driven by dual Brillouin laser pulses. This more feasible than generating via continuous optical-driven because of the enhanced four-wave mixing process triggered high peak intensity The generated TCSs lock beating signal arriving from pulses, allows repetition rate be directly tuned all- optically. can continuously over range 140242 GHz...

10.1109/jphot.2022.3173500 article EN cc-by IEEE photonics journal 2022-05-10

Abstract We report a linear-cavity mode-locked Yb-doped fiber laser using self-made semiconductor saturable absorber mirrors (SESAMs). The SESAMs are grown by means of metalorganic chemical vapor deposition, with design high modulation depth strain-compensated multiple quantum wells. choose two kinds different periods top reflector in the linear cavity, and they can both be applied to stable mode-locking operation without damage. output characteristics oscillator indicate that beneficial for...

10.1088/1555-6611/abd55b article EN Laser Physics 2021-01-12

Abstract We report on a nanosecond all-fiber amplifier with repetition rate of tens MHz. It is based passively mode-locked fiber oscillator at 1064 nm, which has pulse width 28 ps and 27.7 The single-mode length 8 km adopted as stretcher, in new frequency components are introduced by strong nonlinear effect such self-phase modulation, resulting the broadening spectral bandwidth from 0.4 nm to around 20 nm. group-velocity dispersion stretcher −38 (nm km) −1 , stretches duration picosecond 1–7...

10.1088/1555-6611/abd55a article EN Laser Physics 2021-01-11

In this work, a multiband microwave waveforms transmitting system was demonstrated based on all-optical dual fiber combs. Two optical frequency combs via cascaded four waves mixing process ensure the coherence of by sharing pump light. The high-speed tuning laser will be transferred to each newly generated comb line through nonlinear effect in fiber. pairs same order obtained filtering transform chirp domain electrical after being beat PD. By changing parameters control signal, center...

10.1117/12.2666331 article EN 2023-03-28

Chirp-rate-tunable microwave waveforms (CTMWs) with dynamically tunable parameters are of basic interest to many practical applications. Recently, photonic generation signals has made their bandwidths wider and more convenient for optical fiber transmission. An all-optical method multiband CTMWs is proposed demonstrated on all-fiber architecture, relying dual temporal cavity solitons agile repetition rate. In the experiment, triangular chirp bandwidth above 0.45 GHz (ranging from 1.45 1.9...

10.1088/0256-307x/40/6/064201 article EN Chinese Physics Letters 2023-04-21

We report on a nanosecond all-fiber MOPA with ultra-high repetition rate (tens of MHz), which is seeded by semiconductor saturable absorber mirror (SESAM) mode-locking fiber oscillator at 1064 nm. Ultra-high tens MHz realized reducing length in laser cavity. By using single-mode stretcher total 16 km, pulse width mode locking can be broadened from 28 ps to 1~7 ns. The maximum average power achieved 54 W duration 1.3 ns and 27.7 MHz. To the best our knowledge, this first demonstration an...

10.1117/12.2532490 article EN 14th National Conference on Laser Technology and Optoelectronics (LTO 2019) 2019-05-17

Through simulation calculations and experiments, the two popular methods of generating nanosecond (ns) pulsed laser were studied respectively. A new method for a ns with high power ultra-high repetition frequency by using dispersive fiber after SESAM mode-locked oscillator was proposed. In calculation laser, time-frequency evolution characteristics formation process analyzed. The variation stimulated Raman scattering (SRS) effect obtained at different injection powers. extracavity modulation...

10.1117/12.2533712 article EN 14th National Conference on Laser Technology and Optoelectronics (LTO 2019) 2019-05-17
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