A5015666319- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Gold and Silver Nanoparticles Synthesis and Applications
- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Nanocluster Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
Shandong University
2018-2022
State Key Laboratory of Crystal Materials
2018-2019
A high-performancesolar-blind photodetector based on Cr-doped gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) has been fabricated. 140-nm-thick Ga layer was mechanically exfoliated from bulk crystal. The a field-effect transistor structure, which showed very high photo-to-dark current ratio larger than 106 and excellent saturation. When the tested with 254-nm...
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) enabled by an ultrathin, 5 nm, HfO2 film grown atomic-layer deposition were fabricated. An ultra-low operation voltage of 1 V was achieved a very high gate capacitance 1300 nF/cm2. The layer showed excellent surface morphology with low root-mean-square roughness 0.20 nm and reliable dielectric properties, such as leakage current breakdown electric field. As such, the a-IGZO TFTs exhibit desirable properties power...
Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising semiconductors for thin-film transistors and it has started to replace amorphous silicon in display drivers. However, attempts use IGZO resistive random access memories (ReRAMs) are still scarce. This work investigates bipolar switching properties crossbar-ReRAM devices based on thin film. Aluminum bottom electrode two different top electrodes (i.e., Al Ag) were tested devices. It was discovered that an oxygen plasma...
Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which 0.9-nm-thick HfO2 dielectric layer encapsulates InSe nanosheet, thus protecting the InSe-channel from environment reducing Schottky-contact resistance through dipole effect. These devices exhibit low saturation source-drain voltage Vsat &lt; 2 V current densities of up to J = mA/mm, well...
Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics optoelectronics. In particular, in contrast many high-mobility two-dimensional (2D) materials, such phosphorene, more resilient oxidation air. Nevertheless, its implementation future applications requires encapsulation techniques prevent adsorption of gas molecules on surface. this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA)...
High performance Ga2O3 Schottky barrier diodes (SBDs) are achieved by adjusting chemical composition of SnOx electrode. The is produced radio frequency sputtering under various oxygen partial pressures (PO). A synergic study on Raman, x-ray photoelectron, and optical transmission spectroscopy the films illustrates that: with PO = 0 ∼ 3.1% consist mainly SnO Sn high conductivity; 4.6 5.4% composed both p-type n-type SnO2 resistance; 10.0 13.1% dominated low resistivity. In addition, as...
Abstract 2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering study exploitation. Here, field effect transistors (FETs) designed fabricated by encapsulation the semiconductor indium selenide (InSe) with alumina (Al 2 O 3 ) self‐aligned electrical contacts. The Al ‐film is grown directly on InSe immediately after...
Exploring multifunctional surface-enhanced Raman scattering (SERS) substrates with high sensitivity, broadband response property and reliable practicability should be required for ultrasensitive molecular detection in complex environments, which is heavily dependent on the photo-induced charge transfer (PICT) efficiency realized desirable nano-architectures. Herein, we introduce ultra-clean ternary Au/Ag/AgCl nanoclusters (NCs) resonance crossing visible light to near-infrared region created...