An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The layer showed low surface roughness of 0.15 leakage current, and high breakdown voltage 6 V. In particular, very capacitance 720 nF/cm2 achieved, making it possible the a-IGZO TFTs to not only operate at 1 V but also exhibit desirable properties including threshold 0.3 V, small subthreshold swing 100 mV/decade, on/off...

Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) enabled by an ultrathin, 5 nm, HfO2 film grown atomic-layer deposition were fabricated. An ultra-low operation voltage of 1 V was achieved a very high gate capacitance 1300 nF/cm2. The layer showed excellent surface morphology with low root-mean-square roughness 0.20 nm and reliable dielectric properties, such as leakage current breakdown electric field. As such, the a-IGZO TFTs exhibit desirable properties power...

Oxide semiconductorsare highly attractive for the new-generation transparent/flexible electronics. In this letter, logic gates (inverter, NAND, and transmission gates) three-stage ring oscillators based on n-type indiumgallium-zinc-oxide (IGZO) thin-film transistors (TFTs) p-type tin monoxide (SnO) TFTs are presented. The IGZO show a mobility of 10.05 cm2/(V · s) threshold voltage 5.00 V. SnO exhibit 1.19 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Abstract A synaptic memristor based on IGZO and oxygen-deficient HfO 2 films has been demonstrated. The exhibits a fatigue response to monotonic stimulus of voltage pulses, which is analogous the habituation behavior biological memory. occurrence nearly simultaneous with transition from short-term memory long-term movement redistribution oxygen species assistance polarization in layer are responsible for above results. observation proves potential prospect mimic neuron.

In arid and semi-arid regions of northwest China, the ecological environment is fragile fire occurs frequently. Fire has an important impact on regional environment. The last glacial period most recent period, climate unstable, characterized by millennial oscillations. research reveals evolution driving mechanism in China. can provide theoretical reference for prevention control future. Therefore, a sediment core was drilled from southwestern part Hetao Basin. this study, we extended study...

Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we report highly optimized complementary inverters based on n-type indium–gallium–zinc oxide and p-type tin monoxide thin-film transistors. Oxide-based with a record voltage gain of 142 have been achieved. The switching point has also tuned to reach the ideal value, namely half value supply voltage. A narrow transition width 1.04 V (13% voltage) is achieved which offers strong anti-jamming ability avoid...

Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising semiconductors for thin-film transistors and it has started to replace amorphous silicon in display drivers. However, attempts use IGZO resistive random access memories (ReRAMs) are still scarce. This work investigates bipolar switching properties crossbar-ReRAM devices based on thin film. Aluminum bottom electrode two different top electrodes (i.e., Al Ag) were tested devices. It was discovered that an oxygen plasma...

Reliable fault line selection technology is crucial for preventing range expansion and ensuring the reliable operation of distribution networks. Modern systems with neutral earthing via arc extinguishing coil face challenges during single-phase ground faults due to indistinct characteristics system sequence networks influenced by grounding methods on distributed generation side. These factors increase difficulty selection. By analyzing differences between zero-sequence currents feeder lines...

Alumina (Al2O3) films of different thicknesses have been grown at low temperatures (100-250 °C) by atomic-layer deposition on n-type Si substrate.The robustness the Al2O3 film as a barrier has investigated based Al/Al2O3/Si metal-insulator-semiconductor structures.The electron transport through layer was fitted well Fowler-Nordheim tunneling mechanism, from which heights (conduction band offset between and Al2O3) were deduced.It discovered that growth temperature thickness both influenced...

The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated layer were investigated. Charge injection was enhanced for reduction of effective oxide thickness gate dielectric. High program/erase speed as well large shift threshold voltage obtained. Charges improved according to constant current stress measurement. application can considerably improve performance memory.

Amorphous InGaZnO (IGZO) charge-trapping memory (CTM) devices have been designed and demonstrated entirely with thin-film technologies. All three key layers for blocking, charge-trapping, tunneling in the gate stack are made by Al2O3 grown atomic-layer deposition but different oxygen sources, i.e. O3 or deionized H2O, to achieve properties. X-ray photoelectron spectroscopy reveals that few defects exist H2O–Al2O3 film only Al–O bonding, while more residual C-related impurities appear...

In recent years, with the explosive growth of visual sensors and a large number related video applications in Internet Things (IoT), massive data is generated by IoT devices. Since volume far greater than traditional IoT, it challenging to ensure high Quality Service (QoS) for uplinking IoT. To address this challenge, we integrate non-orthogonal multiple access (NOMA) scalable coding (SVC) improve quality, formulate power allocation problem maximize average QoS proposed integrated system....

Future ULSI interconnect system demands extremely high data transmission rate, multi-I/O service, reconfigurable and fault-tolerant computing/processing architecture full compatibility with mainstream silicon CMOS MCM technologies. In this paper, we present a novel RF/wireless that provides unique solution to those needs. Unlike the traditional "passive" metal interconnect, "active" is based on near-field capacitive coupling, low loss dispersion-free microwave signal modern multiple-access...

To enhance the accuracy and efficiency of detecting verticality in single-pile construction for offshore wind power, a binocular stereo vision measurement system is developed. This combines imaging attitude to enable rapid precise pile dynamic environments. The inspected determined using total station, results are compared with data obtained from system. Simulation experiments reveal that when station detects 2.96‰ cylinder, average detected by environments 3.05‰. minimum difference between...

A Schottky diode, which contacts the emitter ledge directly, is used as a potentiometer to monitor effectiveness of emitter/base junction passivation in GaAs based heterojunction bipolar transistors (HBTs). The function and mechanism this on-ledge are carefully analyzed modeled. With apparatus, potential (V/sub Ledge/) can be measured base-emitter bias voltage V/sub BE/. By relating Ledge/ We capable quantifying extent depletion down few angstroms (<10 /spl Aring/) precision. excellent...

Oxide semiconductors have been envisaged to find applications in flexible electronics daily life such as wearable electronic gadgets offer novel user experiences. However, there are still several bottlenecks overcome order realise this goal, especially the lack of oxide‐semiconductor components fast enough for wireless communications, low power oxide transistors, and high‐performance p‐type complementary circuits. Here we review our recent work address these problems, including gigahertz...

The irregularity and disorderliness of the point cloud data pose significant challenges for feature learning. Currently, most processing methods use symmetric pooling functions to aggregate local features. However, this approach may result in clouds being less sensitive global In paper, we develop an aggregated module construct a new network called PEAP-Net classification segmentation. primarily consists two key modules: Edge-wise Attention Pooling (EAP) block based on attention mechanisms...