A5103103802- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Transition Metal Oxide Nanomaterials
- Advanced Photocatalysis Techniques
- Thin-Film Transistor Technologies
- TiO2 Photocatalysis and Solar Cells
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- 2D Materials and Applications
- Organic Electronics and Photovoltaics
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Conducting polymers and applications
- Advanced Memory and Neural Computing
- GaN-based semiconductor devices and materials
- MXene and MAX Phase Materials
- Microwave Dielectric Ceramics Synthesis
- Ferroelectric and Piezoelectric Materials
- Photoreceptor and optogenetics research
- Electrical and Thermal Properties of Materials
- Metal and Thin Film Mechanics
Shandong University
2016-2025
University of South Florida
2012-2013
Technical University of Darmstadt
2010-2011
Heidelberg University
2010
University of Toronto
2001
X-ray photoelectron spectroscopy (XPS) has been used to study the electronic structures of indium tin oxide (ITO) surfaces treated by O+, Ar+, and NHx+ plasmas. The XPS data show that there is a significant change in core level energies (In 3d5/2 O 1s, Sn 3d5/2), donor concentration (Sn4+), valence band maximums (VBM), work functions on ITO being O+ plasmas, compared with virgin Ar+ plasma surfaces. Based these experimental data, surface band-bending theory proposed. explains when Fermi...
Although transition metal dichalcogenides (TMDs) are attractive for the next-generation nanoelectronic era due to their unique optoelectronic and electronic properties, carrier scattering during transmission of devices, distinct contact barrier between semiconductors, which is caused by inevitable defects in TMDs, remain formidable challenges. To address these issues, a facile, effective, universal patching defect approach that uses nitrogen plasma doping protocol developed, via intrinsic...
In this paper we investigate the performance and stability of small-molecule organic solar cells with respect to indium tin oxide (ITO)/organic interface. Different zinc-phthalocyanine (ZnPc)/fullerene (C${}_{60}$) cell architectures without ITO ${\mathrm{O}}_{2}$-plasma treatment are compared tested their degradation behavior under illumination in inert atmosphere. Photoelectron spectroscopy (UPS XPS) shows that increases work function from 4.3 eV up 5.6 eV. We find both increased as well...
Abstract Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because its high electron mobility and stable material properties. Some work has been performed to improve InSe FETs. However, practical applications, electrical stability FETs another essential factor guarantee performance electronic system. Here, we show a highly FET 1200 cm 2 /V·s working regime. The bottom-gate...
The underlying hole-transfer mechanism in high-efficiency OSC bulk heterojunctions based on acceptor-donor-acceptor (A-D-A) nonfullerene acceptors (NFAs) remains unclear. Herein, we study the process between copolymer donor J91 and five A-D-A NFAs with different highest occupied molecular orbital energy offsets (ΔEH) (0.05-0.42 eV) via ultrafast optical spectroscopies. Transient absorption spectra reveal a rapid rate small ΔEH, suggesting that large offset is not required to overcome exciton...
Electrical stability and field-effect mobility of two-dimensional (2D) material-based transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission 2D materials, which can be significantly influenced by interface between dielectric remains a formidable challenge. Early work has achieved excellent on/off ratio, but understanding improvement electrical MoS2 devices still in their infancy. Herein, facile effective strategy is...
Abstract Contact engineering, especially at the interface between metal and 2D semiconductors, to enable high‐performance devices remains a formidable challenge due inevitable chemical disorder Fermi‐level pinning interface. Here, authors report InSe–Se vertical van der Waals (vdW) heterostructures achieve high field‐effect mobility electrical stability in 30 nm InSe transistor (FET), which has low lattice mismatch of 1.1% form 2D/2D low‐resistance contacts, creating an contact that...
High performance thin film transistors (TFTs) based on sputtered In-Al-Zn-O (IAZO) channel layer with excellent photoelectric properties were fabricated and characterized. The IAZO films remained amorphous low surface roughnesses both before after annealing. Hall mobility increased from 27.1 to 74.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs average transmittances over 95% in the visible range wide optical band gaps around...
Abstract In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with effects annealing on films and being studied. The possessed structure, flat surface morphology, high visible light transmittance, wide optical bandgap ≈4.20 eV before after even at 400 °C. minimal roughness internal defects obtained for 300 °C annealed film. Correspondingly, demonstrated best overall performance including...