Jin Ma

ORCID: 0000-0003-0729-3611
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About
Contact & Profiles
Research Areas
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • Ga2O3 and related materials
  • Electronic and Structural Properties of Oxides
  • GaN-based semiconductor devices and materials
  • Copper-based nanomaterials and applications
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Transition Metal Oxide Nanomaterials
  • Thin-Film Transistor Technologies
  • TiO2 Photocatalysis and Solar Cells
  • Luminescence Properties of Advanced Materials
  • Ferroelectric and Piezoelectric Materials
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Conducting polymers and applications
  • Surface Roughness and Optical Measurements
  • Ionic liquids properties and applications
  • Acoustic Wave Resonator Technologies
  • Nanowire Synthesis and Applications
  • Microwave Dielectric Ceramics Synthesis
  • 2D Materials and Applications
  • Graphene research and applications
  • Electrochemical Analysis and Applications
  • Perovskite Materials and Applications

Shandong University
2015-2024

Hunan University of Science and Technology
2022-2024

Changsha University of Science and Technology
2024

State Key Laboratory of Crystal Materials
2016

Xi'an Polytechnic University
2010-2011

Fudan University
2009

Shanghai Institute of Technical Physics
2004

Self-powered solar-blind Ga2O3-based photodetectors based on polycrystalline films rather than single-crystal have been widely studied. In this work, Ta-doped Ga2O3 deposited porous p-type GaN substrates by metal–organic chemical vapor deposition (MOCVD) were prepared as self-powered photodetectors. As the porosity of substrate increased, crystal quality film was optimized, probably resulting from reduction threading dislocations (TDs). The epitaxial relation between β-Ga2O3 and (2̅01) ||...

10.1021/acs.cgd.2c00401 article EN Crystal Growth & Design 2022-07-27

ZnSnO3 single crystal films were prepared on c-plane sapphire substrates using pulsed laser deposition and post-annealing methods. For the as-grown sample at 700 °C, °C resulted in a significant improvement crystalline quality of films, while 800 led to decomposition ZnSnO3. Compared with amorphous mixed ZnSnO3-based photodetectors (PDs), PD has better light-to-dark current ratio (1.32 × 106) higher responsivity (8.71 A/W) 5 V under 254-nm UV (1.1 mW/cm2) illumination. Such good performance...

10.1063/5.0188926 article EN Applied Physics Letters 2024-03-18

Molybdenum-doped ZnO (ZMO) transparent conductive thin films were prepared by dc reactive magnetron sputtering on glass substrates from metallic targets. The structure, surface morphology, chemical state, optical and electrical properties of ZMO studied. XRD pattern confirmed that polycrystalline with the hexagonal crystal morphology measured AFM demonstrated was smooth compact. Chemical state analysis revealed molybdenum atoms existed mainly in Mo6+ Mo5+ ions but not only single oxidation...

10.1088/0268-1242/24/12/125012 article EN Semiconductor Science and Technology 2009-11-24

Abstract TiO 2 /Ag/TiO (TAT) multilayer transparent conducting electrodes were deposited onto glass substrates by room temperature sputtering. The impact of Ag sputtering current on the film morphology, and optical electrical properties discussed. increase in led to a more continuous middle layer. As layer became continuous, TAT had lower sheet resistance higher transmittance. In addition, an optimized electrode with figure merit <?CDATA $15.97\times {{10}^{-2}}{{\Omega }^{-1}}$ ?> <?MML...

10.1088/0022-3727/49/11/115108 article EN Journal of Physics D Applied Physics 2016-02-17
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