A5102893178- ZnO doping and properties
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- 2D Materials and Applications
- Textile materials and evaluations
- Copper-based nanomaterials and applications
- Dyeing and Modifying Textile Fibers
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Advancements in Materials Engineering
- Color Science and Applications
- Nanoporous metals and alloys
- Aluminum Alloys Composites Properties
- Advanced Memory and Neural Computing
- Engineering Applied Research
- Photoreceptor and optogenetics research
- Welding Techniques and Residual Stresses
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Advanced materials and composites
Shandong University
2005-2023
Tân Tạo University
2006
Beijing Jingshida Electromechanical Equipment Research Institute
2002
Abstract Contact engineering, especially at the interface between metal and 2D semiconductors, to enable high‐performance devices remains a formidable challenge due inevitable chemical disorder Fermi‐level pinning interface. Here, authors report InSe–Se vertical van der Waals (vdW) heterostructures achieve high field‐effect mobility electrical stability in 30 nm InSe transistor (FET), which has low lattice mismatch of 1.1% form 2D/2D low‐resistance contacts, creating an contact that...
High performance thin film transistors (TFTs) based on sputtered In-Al-Zn-O (IAZO) channel layer with excellent photoelectric properties were fabricated and characterized. The IAZO films remained amorphous low surface roughnesses both before after annealing. Hall mobility increased from 27.1 to 74.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs average transmittances over 95% in the visible range wide optical band gaps around...
High-performance In-Al-Zn-O (IAZO) films and thin film transistors (TFTs) were fabricated using RF magnetron sputtering. The influence of sputtering power (90-250 W) on the properties device performance was investigated. All IAZO in amorphous state both before after annealing, with a decrease surface roughness observed increase power. Hall mobility annealed degraded as increased. highest 63.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Neuromorphic computing that emulates brain behaviors can address the challenge of von Neumann bottleneck and is one crucial compositions next-generation computing. Here, polynary oxide amorphous InAlZnO (a-IAZO)-based memristor employed as electronic synapse with essential properties biological synapse, including spiking timing-dependent plasticity, paired-pulse facilitation, long-term depression/potentiation, Pavlov associative memory. Especially, a-IAZO are quite sensitive to oxygen...
High-performance InAlZnO (IAZO) Schottky barrier diodes (SBDs) with top Pd/IAZO contact were fabricated, and the influence of sputtering power used to prepare IAZO films on device performance was investigated. The 50 W-fabricated SBD exhibited relatively best electrical properties, including a close-to-unity ideality factor (1.03), high rectification ratio (1.83 × 107), low series resistance (237.5 mΩ cm2), large heights (0.87 0.82 eV), small inhomogeneity (0.05 which mainly due least...
In article number 2000238, Hong Liu, Lin Han, and co-workers present InSe-Se vertical van der Waals (vdW) heterostructures to address a formidable contact engineering challenge, which have low lattice mismatch of 1.1% form 2D/2D low-resistance vdW contacts, creating an InSe interface that substantially limits chemical disorder Fermi-level pinning.