A5101884040- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and devices
- Multiferroics and related materials
- Advanced Memory and Neural Computing
- Magnetic and transport properties of perovskites and related materials
- MXene and MAX Phase Materials
- Neuroscience and Neural Engineering
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Advanced Sensor and Energy Harvesting Materials
- Magnetic properties of thin films
- Gold and Silver Nanoparticles Synthesis and Applications
- Radiation Effects in Electronics
- Acoustic Wave Resonator Technologies
- Photonic and Optical Devices
- Advanced Condensed Matter Physics
- Organic Electronics and Photovoltaics
- ZnO doping and properties
- Nanocluster Synthesis and Applications
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Dielectric properties of ceramics
- Integrated Circuits and Semiconductor Failure Analysis
- Terahertz technology and applications
Xiangtan University
2016-2025
Materials Science & Engineering
2022-2024
Soochow University
2016-2017
Fujitsu (Japan)
2009
Tokyo Institute of Technology
2009
The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good quality characterized by X-ray diffraction high resolution transmission electron microscope. Ohmic electrodes fabricated depositing Ti Pt metals on two surfaces, respectively. Through (I-V) measurement under...
Abstract Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because these circuits’ ultra-high power dissipation and conventional FETs cannot overcome subthreshold swing (SS) limit 60 mV/decade. In this work, ordinary oxide FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ two-dimensional (2D) semiconductor, such as...
Abstract High‐performance stretchable optoelectronic synaptic transistor arrays are key units for constructing and mimicking simulated neuromorphic vision systems. In this study, ultra‐low power consumption low‐operation‐voltage all‐carbon thin film transistors (TFTs) using sorted semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) modified with CdSe/ZnS quantum dots as active layers on ionic liquid‐based composite elastomer substrates first reported. The resulting TFT devices show...
In this work, a multi-stage material design framework combining machine learning techniques with density functional theory is established to reveal the mechanism of phase stabilization in HfO2 based ferroelectric materials. The fractions on more stringent relationship energy differences proposed as an evaluation criterion for performance hafnium-based Based Boltzmann distribution theory, abstract difference converted into intuitive fraction mapping. A large-scale prediction unknown dopants...
A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation deep depletion, partial accumulation conditions. Then, Pao–Sah integral carried out obtain drain current. It shown that in good agreement with numerical simulations subthreshold saturation region. Finally, we discuss strengths limitations (i.e., threshold...
Colloidal gold nanocups are synthesized through single-vertex-initiated deposition on PbS nanooctahedrons and subsequent selective dissolution of the component. They possess strong magnetic plasmon resonance exhibit remarkable orientation-dependent plasmonic properties when deposited flat substrates. can also effectively couple s-polarized light into interfacial region between nanocup substrate.
A Schottky barrier rectifier was fabricated with a (100)-oriented <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrate grown by the edge-defined film-fed method. The Sn-doped had an effective donor concentration of approximately notation="LaTeX">$2\times...
We propose a theoretical model based on the concept of multiferroic tunnel junction. The is capable producing eight different logic states by combining spin-filter effect and screening polarization charges between two electrodes through general spintronic tunneling. dependence conductance ratio with very large magnitude electric polarization, exchange splitting, barrier width, bias voltage investigated. result may provide some insights into realization octal data storage (namely, are used as...
The magneto-mechanical coupling effect of amorphous Co40Fe40B20 (CoFeB) films (10-200 nm) on flexible polyethylene terephthalate substrates were investigated in detail. normalized remanent magnetization (Mr/Ms) CoFeB changes significantly (up to 62%) under small tensile or compressive strain. Moreover, the thickness dependence for was demonstrated. These results provide important information development CoFeB-based magnetic tunnel junction used spintronic devices.
Compensated co-doping not only achieves charge neutrality but is also highly favorable for the formation of polar phases and absence structural defects.
The controllable synthesis of epitaxial nanopillar arrays is fundamentally important to the development advanced electrical and optical devices. However, this fascinating growth method has rarely been applied bottom-up plasmonic nanostructure (PNAs) with many broad, important, promising applications in sensing, nonlinear optics, surface-enhanced spectroscopies, photothermal conversion, photochemistry, etc. Here, a one-step approach single-crystalline Nb
Based on the simulation software, single-event transient (SET) simulations were conducted semi-enclosed gate NMOS devices. The involved bombarding devices with heavy ions under specific conditions. A comparative analysis was to evaluate tolerance of traditional and NMOS. Simulation curves from steady-state states different Linear Energy Transfer (LET) values, as well potential distribution current density maps following ion bombardment, analyzed. Furthermore, carried out inverters composed...
Because of optical distortion induced by atmospheric turbulence and the limitations devices, acquired images space objects are blurred degraded. This effect results in anamorphosis output two-dimensional imaging systems. In this work, we present a novel Enhanced Alignment Fusion-Wasserstein Generative Adversarial Network, called EAF-WGAN, for turbulent image restoration. model is characterized innovative use two modules, including Align Module (AM) Feature Fusion (FFM) generator, especially...
The metal-ferroelectric-insulator-semiconductor (MFIS) structure diodes with SrBi2Ta2O9 (SBT) as ferroelectric thin film and HfO2 insulating buffer layer were fabricated. electrical properties of MFIS investigated for different thickness. experimental results show that the memory window extended significantly thickness increased from 6 to 10 nm. It is also observed leakage current was reduced about 10−10 A at applied voltage 4 V, high low capacitances remained distinguishable over 8 h even...
In this work, we report the coexistence of bipolar resistive switching (BRS) and unipolar (URS) modes in Pt/Zn0.99Zr0.01O/Pt structure device. After forming process, device with URS behavior exhibits either mode same direction or BRS opposite during reset process. Controllable multi-state resistances low high resistance states for were obtained by imposing different compliance currents (Icc) span voltage sweeping process (Vstop). These results suggest that our devices have potential next...
Concave nanocrystals usually exhibit a large electromagnetic-field enhancement and superior catalytic performance due to their sharp corners, negative curvature high-index facets. Conventional gold bipyramids (AuBPs) possess intriguing plasmonic properties which are attractive for various applications while the surface of reported has not been fine-tuned concave or convex structures date. Additionally, longitudinal plasmon resonance (LSPR) wavelengths conventional AuBPs mostly located in...
The electrical properties of negative capacitance (NC) ferroelectric field-effect transistors (FeFETs) were theoretically investigated in the temperature range from 280 to 360 K. derived results indicate that for a fixed thickness thin film amplification surface potential can be tuned by temperature. transfer and output characteristics degrade with increasing due gradual loss NC effect. It is expected may provide some insight into design performance improvement low power dissipation...
The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. derived results demonstrated that NC-SG-MFS-FET displays superior properties compared with traditional SG-MIS-FET, in terms better electrostatic control gate electrode over channel, smaller subthreshold swing (S &lt; 60 mV/dec), and bigger value ION. It is expected...
Multiferroic composite thin films were fabricated based on ferroelectric (FE) Bi3.15Nd0.85Ti3O12 (BNT) and ferromagnetic (FM) La0.7Ca0.3MnO3 (LCMO) parents with different growth sequences of BNT–LCMO/LNO/STO (BL) LCMO–BNT/LNO/STO (LB). Ferroelectric behaviour along remnant polarization (2Pr) 50 μC cm2 40 at room temperature, saturated magnetization values around 206 emu cm−3 192 100 K measured for BL LB films, respectively. The temperature dependence the magnetoelectric (ME) coupling effect...
Abstract Biological neurons encode signals through firing voltage spike trains having unique temporal patterns, enabling efficient information representation and processing. Realization of these rich neuronal characteristics in a single electronic device, without circuitry software assistance, promise compact functional neuromorphic hardware for advanced artificial intelligence applications. Here, Pt/Co 3 O 4‐x /ITO‐based ionic memristor is reported that can faithfully produce exhibiting...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Z. H. Tang, M. X. S. Lv, Q. Cai, Y. G. Xiao, C. P. Cheng, Zhou, J. He; Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer. Journal of Applied Physics 28 April 2013; 113 (16): 164106. https://doi.org/10.1063/1.4803057 Download citation...
In-sensor computing can simultaneously output image information and recognition results through in-situ visual signal processing, which greatly improve the efficiency of machine vision. However, in-sensor is challenging due to requirement controllably adjust sensor's photosensitivity. Herein, it demonstrated a ternary cationic halide Cs0.05FA0.81MA0.14 Pb(I0.85Br0.15)3 (CsFAMA) perovskite, whose External quantum (EQE) value above 80% in entire visible region (400-750 nm), peak responsibility...