A5102020957- Catalytic Processes in Materials Science
- Catalysis and Oxidation Reactions
- Semiconductor materials and devices
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Carbon Nanotubes in Composites
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Cellular and Composite Structures
- Graphene research and applications
- Advanced ceramic materials synthesis
- Gallbladder and Bile Duct Disorders
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Diamond and Carbon-based Materials Research
- Perovskite Materials and Applications
- Nonlinear Optical Materials Research
- High-pressure geophysics and materials
- Colorectal Cancer Screening and Detection
- Graphite, nuclear technology, radiation studies
- Nuclear and radioactivity studies
- Anodic Oxide Films and Nanostructures
- Pediatric Hepatobiliary Diseases and Treatments
- Radiation Dose and Imaging
- Pancreatic and Hepatic Oncology Research
Xi'an Jiaotong University
2022-2024
Dongguan University of Technology
2020-2024
International Iberian Nanotechnology Laboratory
2020-2024
University of Electronic Science and Technology of China
2014-2024
Shanxi Medical University
2019-2023
First Hospital of Shanxi Medical University
2023
Shanghai University
2011-2023
Taiyuan Iron and Steel Group (China)
2019
Shanghai University of Engineering Science
2017
China Geological Survey
2016
Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the most promising materials for many technological applications ranging from optics to electronics. In past years, a property-tunable strategy that involves construction electronic structures h-BN through an atomic-level design point defects has been in vogue. The imported during material synthesis or functionalization by defect engineering can endow with new physical characteristics and applications. this Perspective, we survey...
Abstract In this work, the insertion of AlScN ferroelectric gate dielectric on performance AlGaN/GaN HEMT device is investigated. With negative pre-poling AlScN, threshold voltage ( V th ) shifts positively with a swing range 3.26 V. The influence polarization modulation also reflected by suppression leakage and reduction subthreshold device. AlScN-integrated GaN exhibits an on/off ratio 10 6 80 mV dec −1 . depletion mechanism 2DEG at interface was well described TCAD model.
Lightweight materials such as porous ceramics have attracted increasing attention for applications in energy conservation, aerospace and automobile industries. However, are usually weak brittle; particular, tiny defects could cause catastrophic failure, which affects their reliability limits the potential use greatly. Here we report a SiC/SiO
Abstract This letter showcases the successful fabrication of an enhancement-mode (E-mode) buried p-channel GaN field-effect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate. The transistor exhibits threshold voltage ( V TH ) −3.8 V, maximum ON-state current I ON 1.12 mA/mm, and impressive / OFF ratio 10 7 . To achieve these remarkable results, H plasma treatment was strategically applied to gated p-GaN region, where relatively thick layer (i.e., 70 nm) kept intact without...
An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of ZnS film is about 3.63 eV. Current-voltage (I—V) characteristics ZnS/Si are examined and results show distinct rectifying with a turn-on voltage 1.8V. UV (330 nm) visible (450 photoresponse properties also investigated, which demonstrates potential such an for detecting both light.
By means of ANSYS analysis platform, base conditions in the same, static analysis, thermo-structure and thermo-mechanical coupled were carried out for indexable turning tools designed. longitudinal individual overall lateral comparative simulation results, get deformation stress changes law under different conditions. From point view stress, it can be obtained that temperature has an important influence on tool life. Under certain conditions, There is a reasonable overhang to make maximum...
Lightweight porous ceramics with a unique combination of superior mechanical strength and damage tolerance are in significant demand many fields such as energy absorption, aerospace vehicles, chemical engineering; however, it is difficult to meet these requirements conventional ceramics. Here, we report graded structure design strategy fabricate ceramic nanowire networks that simultaneously possess excellent absorption capacity. Our optimized show compressive up 35.6 MPa at low density 540...
Abstract Background: Although overnight fasting is recommended prior to endoscopic retrograde cholangiopancreatography (ERCP), the benefits and safety of high-carbohydrate fluid diet (CFD) intake 2 h before ERCP remain unclear. This study aimed analyze whether high-CFD can be safe accelerate patients' recovery. Methods: prospective, multicenter, randomized controlled trial involved 15 tertiary centers. A total 1330 patients were into CFD group ( n = 665) 665). The received 400 mL...
Field ionization provides an efficient approach to generate ions, especially for compact neutron generator. We studied the property of field ion emission carbon nanotube bundle arrays prepared by microwave plasma CVD, results shows as-prepared CNT are capable generating ions substantially at low external applied field, which provide a practical way fabrication
We reported an approach to grow carbon nanotube (CNT) arrays on graphene obtain stable high emission current density along with scalable total ultrahigh of more than 200 mA. Microwave plasma CVD was employed grown multi-layered directly silicon wafer followed by synthesis vertically well-aligned patterned CNT arrays, the excellent thermal conductivity and electric enabled CNTs afford large stably.