A5006146312- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Innovative concrete reinforcement materials
- Innovations in Concrete and Construction Materials
- Concrete and Cement Materials Research
University of South China
2024-2025
National Taiwan Normal University
2013
In this paper, the effect of coarse aggregate (CA) shape and content on flow performance index fresh concrete in L-box test (Bm) was investigated based Discrete Element Method (DEM). The Hertz-Mindlin-JKR (Johnson-Kendall-Roberts) contact model used to characterize constitutive relationships concrete. parameters were calibrated by experiment simulation slump test, V-funnel test. CA quantitatively characterized, a functional relationship between specific surface area (SC) energy established....
The flow of six kinds fresh concrete under different rates and lubrication layer thickness (TLL) values in the horizontal pipe was numerically simulated. influence TLL on pressure per unit length (PL) analyzed. It determined that formation (LL) significantly reduces PL pumping. As increased, decreased. However, degree reduction gradually decreased as increased. Relating simulated with experimental PL, size obtained, which between 1 3 mm. minimum maximum were 1.23 2.58 mm, respectively,...
As the strained engineering technology of metal-oxide-semiconductor field effect transistors (MOSFET) is scaled beyond 22 nm node critical dimension, shallow trench isolation (STI) becomes one most important resolutions for isolate devices to enhance carrier mobility advanced transistors. Several key design factors n-type MOSFET (NMOSFET) under resultant loadings STI structures and contact etching stop layers are sensitively analyzed silicon channel stress via finite element method-based...
This research analyzes internal stress in the N-MOSFET. The has two parts. First, we explore effect of N-MOSFET channel when CESL layer is not utilized. dimensional spacer upon with variant width ONO (oxide, nitride, oxide) compared. Second, applied to and stressor, long/short effects are analyzed. It demonstrated that thickness height gate increase, under dielectric becomes tensile, performance improved short channel, resulting whole Therefore, better device characteristics can be expected...