A5052003224- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Semiconductor Quantum Structures and Devices
- Advanced Chemical Physics Studies
- Surface and Thin Film Phenomena
- Magnetic properties of thin films
- Quantum, superfluid, helium dynamics
- Advanced battery technologies research
- Superconducting Materials and Applications
- Advanced Battery Materials and Technologies
- Glass properties and applications
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials
- High-pressure geophysics and materials
- Metal and Thin Film Mechanics
- Molecular Junctions and Nanostructures
- Superconductivity in MgB2 and Alloys
- Rare-earth and actinide compounds
- Acoustic Wave Resonator Technologies
- 2D Materials and Applications
- Advanced Materials and Mechanics
- Advanced Semiconductor Detectors and Materials
- Magnetic and transport properties of perovskites and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Thermoelectric Materials and Devices
Jawaharlal Nehru Centre for Advanced Scientific Research
2020-2025
Elettra-Sincrotrone Trieste S.C.p.A.
2023
University of Calicut
2016
Rockwell Automation (United States)
1968-1971
A study of the low-field de Haas-van Alphen effect in zinc, employing automatic recording variation torque as a function reciprocal applied magnetic field, has revealed six sets periods. These periods are assigned consistent manner to portions free-electron (single orthogonalized planewave) model Fermi surface. Cyclotron masses associated with three larger observed found agree well theoretical estimates. Evidence is obtained for presence spin-orbit energy gap across hexagonal face first...
Received 20 January 1964DOI:https://doi.org/10.1103/PhysRevLett.12.219©1964 American Physical Society
Detailed studies of the de Haas-van Alphen (dHvA) effect in Ag single crystals have been carried out with a high-sensitivity torque magnetometer steady fields up to 40 kG. The angular variations all pertinent dHvA frequencies were determined better than 0.1%. We able achieve this precision by observing oscillations as magnetic field was rotated respect samples at fixed field. More data obtained on new low-frequency which we recently reported, and evidence is presented suggests that these may...
Received 24 December 1963DOI:https://doi.org/10.1103/PhysRevLett.12.148©1964 American Physical Society
We find that the addition of PC co-solvent suppresses parasitic reactions at both electrodes, and improves cycling stability coulombic efficiency Zn-ion batteries.
BiTe, a member of the (Bi2)m(Bi2Te3)n homologous series, possesses natural van der Waals‐like heterostructure with Bi2 bilayer sandwiched between two [Te‐Bi‐Te‐Bi‐Te] quintuple layers. BiTe exhibits both quantum states weak topological and crystalline insulators, making it dual insulator suitable candidate for spintronics, computing thermoelectrics. Herein, we demonstrate that chemical bonding in is to be metavalent, which plays significant role pressure dependent change topology electronic...
BiTe, a member of the (Bi2)m(Bi2Te3)n homologous series, possesses natural van der Waals‐like heterostructure with Bi2 bilayer sandwiched between two [Te‐Bi‐Te‐Bi‐Te] quintuple layers. BiTe exhibits both quantum states weak topological and crystalline insulators, making it dual insulator suitable candidate for spintronics, computing thermoelectrics. Herein, we demonstrate that chemical bonding in is to be metavalent, which plays significant role pressure dependent change topology electronic...
Detailed studies of the de Haas-van Alphen (dHvA) effect in Cu single crystals have been carried out with a high-sensitivity torque magnetometer steady fields up to 40 kG. The angular variations all pertinent dHvA frequencies were determined better than 0.1%. New frequencies, found near 100> directions, are attributable noncentral extremal orbits on belly portion Fermi surface. For each term observed this study there existed orientations at which amplitude fundamental vanishes as result...
Received 23 October 1963DOI:https://doi.org/10.1103/PhysRevLett.11.554©1963 American Physical Society
Detailed studies of the de Haas-van Alphen (dHvA) effect in Au single crystals have been carried out with a high-sensitivity torque magnetometer steady fields up to 40 kG. The angular variations all pertinent dHVA frequencies were determined better than 0.1%. New low-frequency oscillations observed which appear be associated difference frequency resulting from two extremal cross sections on nearly spherical portion Fermi surface. Evidence has obtained suggests that electron $g$ factor for...
The de Haas-van Alphen effect in rhenium has been studied by a null-deflection torsion balance technique magnetic fields up to 40 kG. It is shown that set of ellipsoids and dumbbell-like Fermi surface segments located on the $A\ensuremath{-}L$ symmetry line reduced Brillouin zone can account for most observed data. oscillations associated with breakdown phenomena provide evidence support above model. This model furthermore requires there be degeneracy energy spectrum along line, as predicted...
Abstract The orientations in gallium arsenide grown epitaxially on germanium by hydrogen chloride transport have been studied using glancing angle electron diffraction. Development of twin depends upon the temperature during deposition and markedly orientation substrate. Decrease favours formation orientations, some which arise successive twinning about more than one 〈111〉 axis. Still lower temperatures give rise to fibre textures sometimes wurtzite phase GaAs. required for elimination...
The de Haas-van Alphen effect has been observed in a copper single crystal by means of null-deflection torsion balance technique. Detailed measurements have carried out which provide an accurate determination the topology Fermi surface necks copper. Effective mass values are found to be excellent agreement with cyclotron resonance results. Unusual behavior angular dependence amplitude oscillatory torque is attributed spin-splitting factor theoretical expression for magnetization.
Traditionally, the Coulomb repulsion or Peierls instability causes metal-insulator phase transitions in strongly correlated quantum materials. In comparison, magnetic stress is predicted to drive transition materials exhibiting strong spin-lattice coupling. However, this mechanism lacks experimental validation and an in-depth understanding. Here we demonstrate existence of stress-driven archetypal material, chromium nitride. Structural, magnetic, electronic transport characterization,...
de Haas-van Alphen effect studies have been carried out on the actinide metal thorium. Although sample purities were quite low, two groups of oscillations could be observed throughout {110} and {100} symmetry planes. These data suggest that Fermi surface consists at least a closed segment situated point $\ensuremath{\Gamma}$ in center Brillouin zone set six segments located along $〈100〉$ axes $X$.
The de Haas-van Alphen effect has been observed in single crystals of zirconium pulsed magnetic fields up to 190 kG. A rotating coil device used study the periods oscillations as a function field direction (00.1), (10.0), and ($1\overline{1}\ifmmode\cdot\else\textperiodcentered\fi{}0$) planes hexagonal crystals. Five separate oscillatory terms have with ranging value from 2.0 3.4\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}8}$${\mathrm{G}}^{\ensuremath{-}1}$. data, general, do not...
We have achieved multiple-layer liquid epitaxial growth of Pb1−xSnx Te from Pb–Sn solution. Hall-effect and capacitance measurements determine carrier concentrations to be as low 3 × 1015 cm−3 at 77 °K. Interference microscopy reveals that deviations planarity the grown surface are less than 1 μm over an area mm2.
The pulsed-magnetic-field technique has been utilized to study the de Haas-van Alphen effect in rhenium. These measurements have indicated existence of several new segments Fermi surface addition confirming low-field data reported earlier. can be interpreted terms a model deduced from recent band calculations by Mattheiss.
Low dimensional systems, nanowires (NWs), in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties semiconductor NWs is very important for their applications devices. In present study, conductivity of a freestanding silicon NW estimated by employing Raman spectroscopy. The advantage this technique that excitation source (laser) acts as both heater probe. variations first-order peak position with respect to temperature laser power are...
Null-deflection torque-magnetometer measurements performed on well-annealed low-$\ensuremath{\kappa}$ type-II superconducting films in nearly parallel magnetic fields suggest that flux entry may be delayed to a field ${H}_{s}$ which can greater than ${H}_{c}$. It is found depends the film thickness, coherence length, and $\ensuremath{\kappa}$. Furthermore, our results indicate having thickness less 20 lengths, two critical ${H}_{c3}$ are observed, but not ${H}_{c2}$. The Arbikosov mixed...