A5101458029- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- ZnO doping and properties
- Thermal Radiation and Cooling Technologies
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Plasmonic and Surface Plasmon Research
Jawaharlal Nehru Centre for Advanced Scientific Research
2023-2024
Traditionally, the Coulomb repulsion or Peierls instability causes metal-insulator phase transitions in strongly correlated quantum materials. In comparison, magnetic stress is predicted to drive transition materials exhibiting strong spin-lattice coupling. However, this mechanism lacks experimental validation and an in-depth understanding. Here we demonstrate existence of stress-driven archetypal material, chromium nitride. Structural, magnetic, electronic transport characterization,...
Van der Waals heteroepitaxy refers to the growth of strain- and misfit-dislocation-free epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be utilized in developing flexible near-infrared transition metal nitride plasmonic materials broaden their photonic bioplasmonic applications, such as antifogging, smart windows, bioimaging. Here, we show first conclusive experimental demonstration van heteroepitaxy-enabled semiconducting scandium (ScN) thin...
Abstract Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals semiconductors are precisely engineered at the atomic nano‐scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent from same family, exhibiting identical structural symmetry low lattice mismatch. Here, beyond this conventional constraint, novel class lattice‐matched is introduced that utilizes refractory...