- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Physics of Superconductivity and Magnetism
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Adhesion, Friction, and Surface Interactions
- Molecular Junctions and Nanostructures
- Chaos-based Image/Signal Encryption
- Multiferroics and related materials
- Algorithms and Data Compression
- Metal-Organic Frameworks: Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Organic and Molecular Conductors Research
- Magnetism in coordination complexes
- Neural Networks and Reservoir Computing
- Crystal Structures and Properties
- Magneto-Optical Properties and Applications
- CCD and CMOS Imaging Sensors
- Bauxite Residue and Utilization
- Arsenic contamination and mitigation
- Optical properties and cooling technologies in crystalline materials
- Error Correcting Code Techniques
- Advanced Condensed Matter Physics
- Polymer Surface Interaction Studies
University of Chinese Academy of Sciences
2011-2025
Institute of Microelectronics
2022-2025
University of Macau
2024-2025
Czech Academy of Sciences, Institute of Physics
2025
Institute of Physics
2022-2024
Technical Institute of Physics and Chemistry
2024
Chinese Academy of Sciences
2015-2024
Soochow University
2024
Donghua University
2024
Shangqiu Normal University
2022
Abstract The incorporation of randomness into stochastic computing can provide ample opportunities for applications such as simulated annealing, non‐polynomial hard problem solving, and Bayesian neuron networks. In these cases, a considerable number random numbers with an accurate configurable probability distribution function (PDF) are indispensable. Preferably, provided at the hardware level to improve speed, efficiency, parallelism. this paper, how spin‐orbit torque magnetic tunnel...
Artificial intelligence has surged forward with the advent of generative models, which rely heavily on stochastic computing architectures enhanced by true random number generators adjustable sampling probabilities. In this study, we develop spin–orbit torque magnetic tunnel junctions (SOT-MTJs), investigating their sigmoid-style switching probability as a function driving voltage. This feature proves to be ideally suited for algorithms such restricted Boltzmann machines (RBM) prevalent in...
We study the weak interaction between polymers and oppositely charged surfactants its effect on lubricating behavior wettability of polymer brush-covered surfaces. For cationic (PMETAC) anionic (PSPMA) brushes, a gradual transition from ultralow friction to ultrahigh was observed upon adding surfactant as result electrostatic hydrophobic interactions polymer. The exchange led strong dehydration brush concomitant increase in friction. Upon above CMC, we find reduction for while brushes...
Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize first proof-of-concept 9-bit skyrmion racetrack memory all-electrical controllable functionalities implemented in same device. The key ingredient is tailored nonuniform distribution anisotropy via laser irradiation order...
<title>Abstract</title> <bold>Combinatorial optimization problems are foundational challenges in fields such as artificial intelligence, logistics, and network design. Traditional algorithms, including greedy methods dynamic programming, often struggle to balance computational efficiency solution quality, particularly problem complexity scales. To overcome these limitations, we propose a novel efficient probabilistic framework that integrates true random number generators (TRNGs) based on...
This work presents a high energy-efficiency mixed-signal multiply-and-accumulate (MAC) macro in charge-domain for machine learning (ML) systems. It involves crucial features aimed at enhancing energy efficiency, throughput, and area namely: 1) parallel-serial (ParSer) scheme to augment the throughput by parallel input channels reduce power via serial analog accumulation rather than digital summation; 2) weight-independent digital-to-analog converter (DAC) sampling (WIPDS) cancel weight...
In the quest for secure and reliable random number generation, Magnetic Tunnel Junctions (MTJs) have emerged as a promising technology due to their unique ability exploit stochastic nature of magnetization switching. This paper presents an engineering-oriented design drift-resilient MTJ-based True Random Number Generator (TRNG) utilizing hybrid control strategy. We address critical issue switching probability drift, which can compromise randomness bias output TRNGs. Our approach combines...
Dynamic weak interaction of a lubricant with mechanically strong bilayer porous hydrogels exhibits simultaneous superior lubrication and high load bearing.
True random number generators (TRNGs) play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms, such as the simulated annealing. In this work, we focus on TRNG based high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure cell geometry, but employing different spin–orbit torque (SOT) switching schemes. We conducted comparative study of their probability function pulse amplitude width applied voltage. Through...
Chiral spin interactions play an important role in magnetism. Recent reports have revealed a new type of antisymmetric and indirect interaction, namely, the interlayer Dzyaloshinskii–Moriya interaction (DMI), which is predicted to arise from three-site spin–orbit scattering delocalized electrons as additional Ruderman–Kittel–Kasuya–Yosida (RKKY) effect. Here, we investigated DMI RKKY similar Pt/Co/Pt/Ru/Pt/Co/Pt structures function spacer thickness. Both present synchronous damping...
Spin–orbit torque magnetic tunnel junctions (SOT-MTJs) with high tunneling magnetoresistance (TMR) ratio and energy-efficiency are crucial for the development of SOT-magnetic random-access memory other SOT devices. Here, SOT-MTJs doped an ultrathin layer 0.2 nm CoFeB in W writing line fabricated, TMR updated MTJs is up to 179%. Meanwhile, efficiency atoms (∼0.149) weakly dependent on doping, manifesting intrinsic mechanism generating spin Hall effect. This study shows promise magnetic-atom...
Abstract. In order to monitor ice avalanches efficiently under disaster emergency conditions, a snow cover mapping method based on the satellite data of Sentinels is proposed, in which coherence and backscattering coefficient image Synthetic Aperture Radar (SAR) (Sentinel-1) combined with atmospheric correction result multispectral (Sentinel-2). The Sentinel-1 could be segmented by certain threshold map cover, water bodies extracted from removed segment result. A confidence Sentinel-2 was...
The diagram of phase equilibria in the BaB 2 O 4 –NaF system has been used to deduce relationship between cooling speed (Δ T ), pulling ( v crystal radius R s slope liquidus m solution component x ) and total quantity melt, namely Δ = 0.00159 / G . theoretical curves thickness dependence on rate have also drawn. Under guidance deduced formulas, controlled growth β-BaB (BBO) crystals a desired size achieved. A typical as-grown BBO with dimensions Ø76 × 33 mm (525.25 g) grown successfully by...
This paper presents a process, voltage, and temperature (PVT)-independent constant-gm bias circuit, designed in 0.18μm CMOS technology. In this paper, the conventional precise off-chip resistor is replaced by MOSFET operating triode region with novel which behaves like PVT-independent resistor. Simulations show that maximum gm variation across process corners ±5.2%, worst coefficient range of -40°C to 85°C ±570ppm/°C. The 1.1%/V supply voltage 1.5V 2.5V at 27°C. whole circuit consumes 83μW 1.8V.
Two heterometallic Cu( ii )–Cd( ) polymers (1 and 2) with a 2D layer or 1D chain structure were obtained their magneto-structural correlations discussed, 1 displayed antiferromagnetic ordering at lower temperature.
The T-type CoFeB/spacer/CoFeB structure is a promising candidate for the development of perpendicular spin–orbit torque (SOT) magnetic random-access memory and other SOT devices. It consists an in-plane magnetized layer, perpendicularly non-magnetic metal spacer that induces interlayer exchange coupling. By engineering W spacer, this system achieves field-free switching with nearly 100% ratio. Furthermore, it realizes high coupling field 255 Oe using relatively thinner thickness, enhancing...
Biomimetic synthesis represents a cutting-edge topic in chemical and materials sciences. Herein, we present an approach to bioinspired polymerization autocatalysis using single amino acid monomer water. Similar biomolecular condensates, this undergoes entropically driven liquid–liquid phase separation (LLPS)-mode self-assembly involving densely charged molecular clusters formation, LLPS of leading submicron-scale droplets, crystallization within droplet crowding environments resulting...
Magnetic tunnel junction (MTJ)-based true random number generators (TRNG), which are promisingly utilized as hardware accelerators for probabilistic computing, may suffer intrinsic performance drifting and fluctuation in the probability space variations device arrays. In order to preventively avoid these concerns, it is necessary develop strategies that can help MTJ-based TRNG be self-stabilized calibration-free. Here, we derived a simple easily handleable strategy only depends on current...
Laser crystals, serving as the laser gain medium, are key materials in all-solid-state lasers. Due to considerable thermal expansion and low conductivity, performance of conventional crystals strongly depends on management systems improve quality power, which inevitably restricts development technology. In this work, a new potential crystal Mn2+-doped Zn4B6O13 (ZBO) with high conductivity was grown characterized. The strong luminescence emission at 539 nm ZBO:Mn2+ observed, long lifetime...
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in N\'eel vector antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with perpendicular anisotropy (PMA), as negligible stray fields and terahertz dynamics can enable memory devices higher integration density ultrafast speed. Here we demonstrate that a prototypical AFM insulator PMA, Cr2O3, be reliably readout...
Lead anode slime is produced in large quantities during lead electrolysis, which has a high Sb content of 10-50 wt% and can be easily recycled. However, general alkaline pressure leaching process for pre-removal As, was partially converted to Na3SbO4 with stability. This limited the reduction recovery subsequent Na2CO3 smelting reduction. Considering this fact, ZnS creatively used as an additive study destroy stable structure increase reduction, meanwhile reduced volatile Zn (g) In certain...