A5084835246- 2D Materials and Applications
- Magnetic properties of thin films
- Perovskite Materials and Applications
- Magnetic Properties and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Thermal Expansion and Ionic Conductivity
- Rare-earth and actinide compounds
- Magnetic and transport properties of perovskites and related materials
- Metal and Thin Film Mechanics
- Heusler alloys: electronic and magnetic properties
- Theoretical and Computational Physics
- Advanced Memory and Neural Computing
- Copper Interconnects and Reliability
- Organic and Molecular Conductors Research
- Metallic Glasses and Amorphous Alloys
- ZnO doping and properties
Sun Yat-sen University
2018-2019
State Council of the People's Republic of China
2018
Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained rapid rise of interest for its physical nature and potential applications oscillators memory devices. Here, we report var der Waals epitaxial growth centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 showed sudden resistance change at temperatures 240 135 K, corresponding to two CDW phase transitions driven temperature. Moreover, the can be an...
Current-induced magnetization switching was investigated in Au/Fe4N bilayer films grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Depending on lattice distortion and interfacial coupling induced substrates, the Fe4N layer could be divided into two sublayers having different magnetic anisotropies. The bottom sublayer shows perpendicular anisotropy (PMA), while top one has in-plane (IMA). Coupling between provides an extra effective field enables field-free films. By...
Charge density wave phase comprises a periodic modulation of the electronic charge with distortion atomic lattice, and transition-metal dichalcogenides are very important subjects for study this distortion. In work, large-area 1T′-vanadium telluride (VTe2) films grown by molecular beam epitaxy show order down to few-layer limit. The film thickness was found be strongly correlated out-of-plane vibration mode shifting from Raman scattering, increasing leads an insulating-metallic transition....
Au/Fe4N bilayer films have been grown by the plasma-assisted molecular beam epitaxy system. After an extraordinarily small charge current is applied to samples, magnetization of Fe4N layer was reversed spin-orbit torque. Analyses indicate that reversal realized via domain wall motion and it confirmed magnetic force microscopy measurements. By comparing transport properties film with those control samples before after using a pulse stimulate films, contributions thermal effect spin transfer...
Mn4-xGdxN films with x ranging from 0 to 0.48 have been grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Analyses show that there is competition between Kondo coupling and the Ruderman–Kittel–Kasuya–Yosida interaction in these films. The anomalous Hall effect (AHE) was investigated, multiple competing scattering mechanism used differentiate different contributions AHE. Fitting results using multivariable scaling relation contribution of skew-scattering AHE suppressed...
The detection of broad wavelengths from the near-ultraviolet to near-infrared regime using functional semiconductor nanostructures is great importance in either fundamental research or technological application. In this work, we report high-performance optoelectronic nanodevices based on a single Te nanobelt grown by molecular beam epitaxy. photodetector demonstrates fast photoresponse time (a rise 510 μs and decay 300 μs), high photoresponsivity 254.2 A W-1, an external quantum efficiency...