A5100325322- Advanced Memory and Neural Computing
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Transition Metal Oxide Nanomaterials
- Magnetic and transport properties of perovskites and related materials
- Heusler alloys: electronic and magnetic properties
- Shape Memory Alloy Transformations
- 2D Materials and Applications
- Magnetic properties of thin films
- Integrated Energy Systems Optimization
- Astro and Planetary Science
- Ferroelectric and Negative Capacitance Devices
- Ga2O3 and related materials
- Quantum Dots Synthesis And Properties
- Gamma-ray bursts and supernovae
- Building Energy and Comfort Optimization
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Atomic and Subatomic Physics Research
- Geothermal Energy Systems and Applications
- Rare-earth and actinide compounds
- Phase-change materials and chalcogenides
- Nanowire Synthesis and Applications
- Astronomy and Astrophysical Research
- Hybrid Renewable Energy Systems
Zunyi Normal College
2022-2024
Sun Yat-sen University
2017-2019
State Council of the People's Republic of China
2018
Shanghai University
2015-2016
Southwest University
2014-2016
Technical University of Denmark
2016
Grinm Advanced Materials (China)
2015
General Research Institute for Nonferrous Metals (China)
2015
Chongqing University
2015
Jilin University
2014
The resistive switching effect of devices with metal-oxide–metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on Ti substrate were synthesized by hydrothermal process. Moreover, device Ag/NiWO4/Ti demonstrated. shows an enhanced bipolar under white-light illumination. This study useful exploring multifunctional materials and their applications in light-controlled
The DNA strand assisted conductive filament mechanism is suggested to explain the resistive switching behaviors of Au/CuO-DNA-Al/Au/Si device.
High quality WO3/CoWO4 core–shell nanowires have been successfully prepared by a hydrothermal process. Bipolar resistive switching behavior in Ag/[WO3/CoWO4]/Ag device is demonstrated. The can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 333 at room temperature. physical model conducting filament formation due to the diffusion Ag ions along high electric field has suggested explain bipolar behavior.
Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained rapid rise of interest for its physical nature and potential applications oscillators memory devices. Here, we report var der Waals epitaxial growth centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 showed sudden resistance change at temperatures 240 135 K, corresponding to two CDW phase transitions driven temperature. Moreover, the can be an...
view Abstract Citations (58) References (29) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS The CA II Emission Lines of SN 1987A Li, Hongwei ; McCray, Richard We study the evolution [Ca II] λλ7300 and Ca λλ8600 emission lines in spectrum 1987A. can explain observations with a model which (1) come from ~1.7 x 10^-4^ M_sun_ calcium distributed filling factor f_Ca_~0.1 sphere expanding velocity 2500 km s^-1^; (2) electron number density is given by N_e_~ 4...
Current-induced magnetization switching was investigated in Au/Fe4N bilayer films grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Depending on lattice distortion and interfacial coupling induced substrates, the Fe4N layer could be divided into two sublayers having different magnetic anisotropies. The bottom sublayer shows perpendicular anisotropy (PMA), while top one has in-plane (IMA). Coupling between provides an extra effective field enables field-free films. By...
Charge density wave phase comprises a periodic modulation of the electronic charge with distortion atomic lattice, and transition-metal dichalcogenides are very important subjects for study this distortion. In work, large-area 1T′-vanadium telluride (VTe2) films grown by molecular beam epitaxy show order down to few-layer limit. The film thickness was found be strongly correlated out-of-plane vibration mode shifting from Raman scattering, increasing leads an insulating-metallic transition....
Au/Fe4N bilayer films have been grown by the plasma-assisted molecular beam epitaxy system. After an extraordinarily small charge current is applied to samples, magnetization of Fe4N layer was reversed spin-orbit torque. Analyses indicate that reversal realized via domain wall motion and it confirmed magnetic force microscopy measurements. By comparing transport properties film with those control samples before after using a pulse stimulate films, contributions thermal effect spin transfer...
Mn4-xGdxN films with x ranging from 0 to 0.48 have been grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Analyses show that there is competition between Kondo coupling and the Ruderman–Kittel–Kasuya–Yosida interaction in these films. The anomalous Hall effect (AHE) was investigated, multiple competing scattering mechanism used differentiate different contributions AHE. Fitting results using multivariable scaling relation contribution of skew-scattering AHE suppressed...
The detection of broad wavelengths from the near-ultraviolet to near-infrared regime using functional semiconductor nanostructures is great importance in either fundamental research or technological application. In this work, we report high-performance optoelectronic nanodevices based on a single Te nanobelt grown by molecular beam epitaxy. photodetector demonstrates fast photoresponse time (a rise 510 μs and decay 300 μs), high photoresponsivity 254.2 A W-1, an external quantum efficiency...
High spin states of the odd-odd nucleus 92Nb are investigated using 82Se (14N, 4n)92Nb reaction at a beam energy 54 MeV. The level scheme was extended up to Jπ =(16+) about 7.3 MeV and Jπ=(21−) 9.7 According systematic analyses comparison with neighboring nucleus, higher could be interpreted by multi-particle excitations in π(f5/2,p3/2,p1/2,g9/2)⊗ν(p1/2,g9/2,d5/2, g7/2) configuration space.
view Abstract Citations (20) References (31) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS The He i Emission Lines of SN 1987A Li, Hongwei ; McCray, Richard We model the evolution I lines, especially 1.083 micron and 2.058 micron, from envelope during first 3 yr after explosion. metastable 2^3^S 2 ^1^S states are populated by fast electrons resulting energy deposition gamma rays depopulated electron collisions two-photon decay. line is excited mainly...
Obvious resistive switching is observed under light irradiation in BaTiO 3 /CoFeB/BaTiO trilayer prepared by magnetron sputtering system while the same sample shows extremely small effect dark. Under of 31.4[Formula: see text]mW/cm 2 , ratio high resistance to low (OFF/ON ratio) annealed at 600[Formula: text]C can keep about 80 more than 70 test cycles without obvious decay. The current conduction mechanism PF emission LRS and space charge limited (SCLC) HRS. origin behavior be explained...