A5088209365- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Magnetic properties of thin films
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Magnetic and transport properties of perovskites and related materials
- 2D Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Magnetic Properties and Applications
- Theoretical and Computational Physics
- Microwave Dielectric Ceramics Synthesis
- Copper-based nanomaterials and applications
- Anodic Oxide Films and Nanostructures
- Dielectric materials and actuators
- Magnetic Properties and Synthesis of Ferrites
- Advanced Condensed Matter Physics
- Heusler alloys: electronic and magnetic properties
- Topological Materials and Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
Southwest University
2013-2024
Ministry of Agriculture and Rural Affairs
2020-2024
Case Western Reserve University
2024
Tongji University
2024
Songshan Lake Materials Laboratory
2021-2023
Guangzhou Institute of Energy Conversion
2023
State Key Laboratory of Silkworm Genomic Biology
2020-2022
Zhoushan Hospital
2022
University of Science and Technology Beijing
2022
Lanzhou University
2011-2021
The resistive switching effect of devices with metal-oxide–metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on Ti substrate were synthesized by hydrothermal process. Moreover, device Ag/NiWO4/Ti demonstrated. shows an enhanced bipolar under white-light illumination. This study useful exploring multifunctional materials and their applications in light-controlled
The DNA strand assisted conductive filament mechanism is suggested to explain the resistive switching behaviors of Au/CuO-DNA-Al/Au/Si device.
We report resistive switching behavior in a Ag/[BiFeO<sub>3</sub>/γ-Fe<sub>2</sub>O<sub>3</sub>]/FTO device, which can be controlled simultaneously by voltage pulses, magnetic-field and white-light.
Multiferroic materials exhibiting magnetism and ferroelectricity are promising multifunctional materials, especially for spin electronic applications. The magnetoelectric effect was observed in many multiferroic which couples ferroelecticity. However, until now, the coupling of light with has not been reported yet. Herein we report on observation remarkable white-light-controlled ferromagnetism BiFeO3 nanosheets at room temperature (300 K). relative white-light-induced reduction...
High quality WO3/CoWO4 core–shell nanowires have been successfully prepared by a hydrothermal process. Bipolar resistive switching behavior in Ag/[WO3/CoWO4]/Ag device is demonstrated. The can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 333 at room temperature. physical model conducting filament formation due to the diffusion Ag ions along high electric field has suggested explain bipolar behavior.
In this work, BaWO4 nanospheres were successfully prepared by hydrothermal process. The bipolar resistive switching behavior of Ag/BaWO4/FTO device is observed. Moreover, can be modulated white light. maintain superior stability in the dark and under white-light illumination. This study useful for developing light-controlled nonvolatile memory devices.
Multiferroic materials, which synchronously exhibit magnetism and ferroelectricity, are promising multifunctional especially for spin electronic applications. The magnetoelectric effect has been observed in many multiferroic materials couples ferroelectricity. However, until now, the coupling of light with ferroelectricity not reported. Herein, we report observation remarkable white-light-controlled ferromagnetism single-crystalline BiFeO3 nanoflowers at room temperature. relative...
The electric-pulse-driven resistance change of metal/oxides/metal structure, which is called resistive switching effect, a fascinating phenomenon for the development next generation non-volatile memory. In this work, an outstanding bipolar behavior Ag / MoS 2 /fluorine-doped tin oxide (FTO) device demonstrated. can maintain superior reversible stability over 100 cycles with OFF/ON-state ratio about 10 3 at room temperature.
Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto wafers coated with thermal oxide. In this work, we studied feasibility using plasma hydrogenation replace high dose H for layer transfer. Boron was introduce H-trapping centers into illustrate idea. Instead widely recognized interactions between boron and hydrogen atoms, study showed that lattice damage, i.e., dangling bonds, traps atoms can lead surface blistering during or upon postannealing at...