A5059593019- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Electron and X-Ray Spectroscopy Techniques
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Optical Coatings and Gratings
- Metal and Thin Film Mechanics
- Surface and Thin Film Phenomena
- Semiconductor materials and interfaces
- Photovoltaic System Optimization Techniques
- Silicon and Solar Cell Technologies
- solar cell performance optimization
- Ion-surface interactions and analysis
- ZnO doping and properties
- Magnetic properties of thin films
- Transition Metal Oxide Nanomaterials
- Phase-change materials and chalcogenides
- TiO2 Photocatalysis and Solar Cells
- Surface Roughness and Optical Measurements
- Perovskite Materials and Applications
- Nuclear Materials and Properties
- Catalytic Processes in Materials Science
- Organic Electronics and Photovoltaics
- X-ray Spectroscopy and Fluorescence Analysis
Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas
2013-2023
Universidad Complutense de Madrid
2006-2018
Instituto Tecnológico y de Energías Renovables
2005
Universidad Autónoma de Madrid
1992-2002
Advancing in the photocatalyst scale-up is crucial for development of highly efficient solar fuels production at industrial scale. Here, we report DC-magnetron sputtering as a suitable technique to produce photocatalytic TiO2 coatings CO2 reduction with view on process scalability. The crystallinity obtained varies surface density, amorphous or quasi-amorphous very low densities, while UV light absorption coefficients show opposite trend, which has been related proportionally higher abundace...
Advanced constructive materials, such as electrochromic smart windows (ECSWs) and building integrated photovoltaics modules (BIPV), can improve the energy efficiency in buildings. A good optical thermal characterization of these elements is necessary to assess compare their performance. The existing testing procedures for glass buildings are applied both types elements, it considered that while suitable allow comparison two technologies, indoor not valid BIPV nor ECSWs, because temperature...
Abstract The dielectric loss function of ZrO 2 over 0–80 eV has been determined from a quantitative analysis reflection electron energy spectra (REELS) at different primary energies. From this, the inelastic mean free path for 200–2000 electrons in calculated. (IMPF) is found to depend on depth which backscattered. For great depths, IMFP approaches constant value same as that would be obtained within model ignores effects surface. derived values have compared formulae presented literature...
The electronic structure of $\mathrm{NiO}$ nanometric planar islands on highly oriented pyrolitic graphite has been studied by means the $\mathrm{Ni}\phantom{\rule{0.3em}{0ex}}2p$ and $\mathrm{O}\phantom{\rule{0.3em}{0ex}}1s$ x-ray absorption spectra. spectrum early stages growth shows a double peak at threshold which is attributed to splitting unoccupied $\mathrm{Ni}\phantom{\rule{0.3em}{0ex}}{e}_{g}$ states. This compared previous results for $3\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$...
The electronic structure of the TiO2−SiO2 interface has been investigated using X-ray absorption spectroscopy (XAS). TiO2 overlayers have grown on two substrates, amorphous SiO2 and highly oriented pyrolytic graphite (for comparison), by evaporation Ti in an oxygen atmosphere at room temperature. rate was low enough to allow a detailed study early stages growth, i.e., submonolayer regime (θ < 1). 2p XAS spectra measured for different coverages. corresponding show unusual shape not reported...
We present a critical study of the known reflectance (R) and transmittance (T) method to extract optical constants thin film–substrate systems. In order effect usual assumptions (homogeneous layers, semi-infinite substrate, normal incidence angle for measurement, etc.) in loss solution during numerical inversion process, we have developed theoretical model that overcomes these approximations. Simulated systems as well RT measurements from ZnSe film onto CaF2 substrate been used show how...
This work has been focused on the synthesis by co-evaporation bare and Mo-coated glass substrates of tin sulfide films with thicknesses in 700-1200 nm range for use as absorber layers, a substrate temperature at 350 °C sulfur partial pressure 1-2*10-3 Pa. After evaporation, samples were heated 500 under Ar atmosphere. The evolution morphological, structural, chemical optical properties deposited or analyzed function thickness, before after annealing. For grown glass, some phase mixing...
The dielectric properties of metallic Ti and thin films TiO2 TiN in the energy range from 1.5 to 60 eV have been determined by quantitative analysis respective electron loss spectra reflection mode (REELS). function (ELF) every material, that is proportional Im {1/ε}, obtained trial error until a good agreement between simulated experimental inelastic scattering cross-sections at three different primary energies (i.e. 0.5, 1 keV) achieved. Kramers-Kronig transformation then used obtain real...
Electron delocalisation times are significantly faster for SnS than 2 . Ultrafast times, as low 30 attoseconds, were measured thanks to the application of core hole clock method.
Structural, compositional, electrical and morphological properties of CuIn1−xGaxSe2 (x = 0.15, 0.30) ordered defect compounds (ODC) CuGa3Se5, CuGa5Se8, CuIn3Se5 thin films grown by flash evaporation onto soda lime glass substrates (SLG) ITO/SLG have been studied. Polycrystalline with accentuated preferential orientation in the (1 1 2) plane tetragonal structure obtained. Annealing Se atmosphere improves structural, morphological, optical evaporated films, but provokes formation a CuInxSey...