A5009187149- Ga2O3 and related materials
- ZnO doping and properties
- Perovskite Materials and Applications
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- Electrochemical Analysis and Applications
- Electrochemical sensors and biosensors
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Electrocatalysts for Energy Conversion
- Solid-state spectroscopy and crystallography
- Natural product bioactivities and synthesis
- Advanced biosensing and bioanalysis techniques
- Advanced Semiconductor Detectors and Materials
- Fuel Cells and Related Materials
- Semiconductor materials and interfaces
- Phytochemistry and Biological Activities
- Copper-based nanomaterials and applications
- Essential Oils and Antimicrobial Activity
- Advanced battery technologies research
- Postharvest Quality and Shelf Life Management
- Gold and Silver Nanoparticles Synthesis and Applications
- Atmospheric chemistry and aerosols
- Advanced Condensed Matter Physics
Vietnam Academy of Science and Technology
2021-2024
University of Science and Technology
2021-2024
Hanyang University
2018-2021
Chungnam National University
2012
Rural Development Administration
2012
Developing highly efficient and durable hydrogen evolution reaction (HER) electrocatalysts is crucial for addressing the energy environmental challenges. Among 2D-layered chalcogenides, MoSe2 possesses superior features HER catalysis. The van der Waals attractions high surface energy, however, stack layers, resulting in a loss of edge active catalytic sites. In addition, suffers from low intrinsic conductivity weak electrical contact with To overcome issues, this work presents novel...
The recent advancement in designing novel spinel nanostructures has opened virtually infinite possibilities for the development of high-performance electrochemical sensors to detect target species. electrocatalytic activity structures can be enhanced by tuning cation distribution; however, role distribution at tetrahedral ions on sensing responses rarely been considered. Herein, effect sites (Td) nanostructure ZnCo2O4 performance toward carbaryl (CBR) was first investigated. nanoflake...
Abstract The pulse laser deposition method is recognized for its ability to minimize defects in semiconductors by carefully controlling gas pressure and temperature during deposition. This research discusses the presence of defect states β-Ga2O3/p-Si heterojunction created using pulsed at different oxygen pressures through Deep Level Transient Spectroscopy (DLTS). When rose from 0 25 mTorr, electron trap EC – 1.21 eV associated with an vacancy vanished, resulting a 1.6-fold decrease total...
We have optimized the responsivity and response speed of a β-Ga2O3-based photodetector. The β-Ga2O3 thin films were deposited on glass substrate under various oxygen partial pressures from 0 to 50 mTorr using pulsed laser deposition. Time-response measurements show that as-grown at an pressure has fastest decay times 33 100 ms, which are better than those prepared lower pressures. This sample also showed high photoresponsivity 5 A W-1 detectivity 1012 cmHz1/2/W. performance detector grown...
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ nanodot formation. Although diodes present excellent rectifying characteristics, their barrier height and ideality factor are highly dependent upon temperature variation. The relationship between height, factor, conventional Richardson plot reveals that exhibit inhomogeneous attributed to interface states metal film point defects within layers...
Because the power conversion efficiency (PCE) of hybrid halide perovskite solar cells (PSCs) could exceed 24%, extensive research has been focused on improving their long-term stability for commercialization in near future. In a previous study, we reported that addition number ionized iodide (triiodide: I3-) ions during film formation significantly improved PSCs by reducing deep-level defects layer. Understanding relationship between concentration these and chemical aging is important not...
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that I-V characteristics show a good rectifying behavior with large ratio 103–105 at forward to reverse current ±1 V. The interface states and non-interacting point defect complex between Pd metal crystals induced inhomogeneity barrier height ideality factors. Furthermore, we electronic conduction devices prefers thermionic field...
The electronic deep level states of defects embedded in freestanding GaN crystals exfoliated from Si substrates by hydride vapour phase epitaxy (HVPE) is investigated for the first time, using transient spectroscopy (DLTS). electron traps are positioned 0.24 eV (E1) and 1.06 (E2) below conduction band edge, respectively. capture cross sections E1 E2 evaluated to be 1.65 × 10-17 cm2 1.76 10-14 corresponding trap densities 1.07 1014 cm-3 2.19 1015 cm-3, DLTS signal concentration levels...
본 실험에서는 국내에서 육성한 조생종 '한아름'과 중생종 '만풍배'를 '신고' 품종과 대조하여 과실생장 기간 중의 과실 품질요인의 변화 및 세포벽 구성물질의 변화를 조사하였다. 세 품종 모두 생육기간 중 과육의 경도는 지속적으로 감소하여 과실성숙기의 '한아름', '만풍배' '신고'에서 각각 29.4, 33.5 27.4N으로 나타났다. 성숙기에 에틸렌발생량이 매우 낮았는데 '한아름'에서만 성숙일에 <TEX>$0.39{\mu}L{\cdot}L^{-1}$</TEX>를 보였고 '만풍배'와 '신고'는 에틸렌이 측정되지 않았다. 품종의 가용성당은 과당이 우점하고 있었고, 과실의 성숙과 더불어 공통적으로 자당의 비율이 증가하였다. 품종에서 조사한 알코올불용성 물질(EIS)의 함량은 조생종인 '한아름'의 경우, <TEX>$10.79mg{\cdot}g^{-1}$</TEX> FW로 '만풍배'의 12.72 '신고'의 <TEX>$12.75mg{\cdot}g^{-1}$</TEX> FW에 비해...
We report on the defect states incorporated in a-plane GaN crystals grown r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two were observed at 0.2 eV and 0.55 below conduction band minimum with densities of 5 × 1012/cm3 4.7 1013/cm3, respectively. The size capture cross section, non-linear relation trap from depth profile, filling pulse width, PL measurements indicated that electronic levels HVPE originated non-interacting...
We investigated the defect states of organic lead halide (CH3NH3PbX3: CH3NH3+) methylammonium (MA; X = Br− and I−) by using optical pulse-induced conductance transient spectroscopy. Organic single crystals having a bandgap ranging from 2.16 to 1.45 eV were grown inverse temperature crystallization. The shallow trap energy level MAPbBr2.5I0.5 was Ev + 0.06 eV. deep traps MAPbBr3 MAPbI3 1.24 0.84 eV, respectively. may have decreased reactivity between iodide bromide ions in crystal lattice....
We investigated the defect states and optoelectrical properties of methylammonium lead iodide (MAPbI3) perovskite films synthesized via a two-step dry process. To synthesize MAPbI3 thin films, PbI2 were deposited rf magnetron sputtering subsequently exposed to (MAI) vapor films. By using deep level transient spectroscopy space-charge-limited current methods, density was proven be reduced by about 6 times as reaction temperature increased from 90 110 °C. At high 130 °C, deformation process...
We have studied the defect states and electronic transport mechanisms in mismatched p-InP/i-InGaAs/n-InP photodiode grown by molecular beam epitaxy (MBE) using deep-level transient spectroscopy (DLTS) current–voltage (I–V) measurements. Two were observed p-InP layer, which could originated from Zn diffusion, another one detected i-InGaAs acted as a dislocation defect. The total density of device estimated DLTS space-charge limited current (SCLC) was about 4 × 1013, much lower than other...
This report focuses on evaluating the influence of structural and physical properties MoS 2 material electrochemical behaviors as well sensing performance toward detection targeted chloramphenicol (CAP) molecules. The various samples were fabricated via a simple ultrasonication route at different experimental times. Through using X-ray diffraction (XRD), Raman, scanning electron microscopy (SEM), chemophysical characterizations analyzed discussed. Furthermore, from measurements such CV, EIS,...