A5055879462- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Microwave Engineering and Waveguides
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Superconducting and THz Device Technology
- Innovation and Knowledge Management
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Public Procurement and Policy
- Digital Economy and Work Transformation
- Analog and Mixed-Signal Circuit Design
- demographic modeling and climate adaptation
- Innovation, Technology, and Society
- 3D IC and TSV technologies
- Regional Development and Policy
- Financial Literacy, Pension, Retirement Analysis
- Laser-Matter Interactions and Applications
- Digital Marketing and Social Media
- Innovation Policy and R&D
- Millimeter-Wave Propagation and Modeling
- Public-Private Partnership Projects
- Housing Market and Economics
- Optical Network Technologies
- Monetary Policy and Economic Impact
Stockholm School of Economics
2024
Ericsson (Sweden)
2019-2023
Stockholm University
2018-2022
Ratio
2020
RUAG (Sweden)
2017
Chalmers University of Technology
2002-2015
Digital entrepreneurship may result in institutional turbulence and new initiatives are frequently blocked by vested interest groups who posit superior financial relational resources. In this paper, we explore the role of cities facilitating digital overcoming resistance to innovation. Drawing upon two historical case studies city Stockholm along with an extensive material on sharing economy Sweden, our results suggest that offer environment is critical for entrepreneurship. The economic...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB 192-GHz bandwidth a two-cascaded an average 16 dB with 235 GHz. third circuit is conventional more than 10-dB from 70 kHz up to 180 To the authors' best knowledge, are widest band any reported date. Furthermore, has record for circuits...
Design and characterization of InP DHBT amplifiers in common-emitter common-base topologies are presented. Both one-stage multistage circuits demonstrated. For one the amplifiers, a peak gain 24 dB at 255 GHz is measured, which among highest reported gains for HBT above 200 GHz, more than 10 210-315 GHz. The noise figure this amplifier measured on-wafer 240-295 it demonstrates minimum 10.4 265 lowest
Earlier research describes the development of real housing prices as a ‘hockey stick’, i.e. long stagnation followed by sharp upturn in recent decades. A problem is that there are very few indices residential property covering longer periods. Using database around 10,900 sales, this study presents historical price index for Stockholm 1818–1875, which extend previous 57 years, one longest any city. so-called repeated sales compared to appraisals ratio index. We show terms have been two...
Previous research in business and management history has identified the Icarus paradox, which describes how organisations may fall due to overconfidence hubris. We build upon previous on paradoxes introduce notion of an inverted paradox. Using rich archival sources coded a relational database, we show entrant firm, Comvik, outmanoeuvred established government monopoly non-market domain from 1980 1990, despite inferior resources weak market position. The Televerket faced paradox; it could not...
How are historical, practice-oriented, and critical research perspectives in management affected by digitalization? In this article, we describe discuss how two digital approaches can be applied they may influence the future directions of scholarship education: Social Media Analytics archives. Our empirical illustrations suggest that digitalization generates productivity improvements for scholars, making it possible to undertake was previously too laborious. It also enables researchers pay...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers using cascode cells, in a distributed topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain 192 GHz bandwidth 2-cascaded excess of 16 exceeding 235 GHz, thus being the widest band reported to date.
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its on-chip measurements are reported. The multi-cell distributed uses four gain cells where each consists of a common collector input stage followed by cascode stage. chip includes bias, decoupling terminating circuits for the dc RF interconnects; it measures 0.72 mm 0.4 mm. It consumes 210 mW power can deliver up to 5.5 dBm output at 195 GHz. achieves an average 13.5 dB with overall...
What is the role of innovation policy for accomplishing renewal mature industries in Western economies? Drawing upon an unusually rich dataset spanning 9752 digitized archival documents, we categorize and code decisions taken by policymakers on several levels while also mapping quantifying strategic activities both entrant firms incumbent monopolists over a decade. Our data concerns two empirical cases from Sweden during time period 1980–1990: financial sector telecommunications sector. In...
In this paper, we present WR05 (140-220 GHz) and WR03 (220-325 five-stage amplifier modules with novel membrane microstrip-to-waveguide transitions. The use a 250-nm InP double heterojunction bipolar transistor (DHBT) technology multilayer thin-film microstrip transmission lines. waveguide transitions E-plane probes on 3- μm-thin GaAs substrate. Beam lead connectors integrated the transition eliminate need of highly reactive bond wires. addition, process steps such as backside metallization,...
Integrated circuits (ICs) with multilayer backend process and a large front-side ground plane support the propagation of parasitic substrate modes. These modes resonate at frequencies that typically are within bandwidth operating close to in submillimeter-wave range, i.e, beyond 300 GHz. The resonances cause unwanted coupling feedback, which result circuit instability degraded performance for range these resonances. A common method suppress from propagating is use numerous through-wafer vias...
This paper presents a pre-amplified detector receiver based on 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of slot antenna followed by five stage low noise amplifier and detector, all integrated onto same circuit. Results measured responsivity are presented. is characterized through measuring its response to hot (293) cold (78) K terminations. Measurements voltage spectrum at video output...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback common-emitter, operating at up to 290 GHz are presented demonstrated. The use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. common-emitter amplifier demonstrates a gain above 10 dB from 220 280 peak 15 while the 16 265 GHz.
This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and package is non-galvanic realized silicon micromachining technique. After successful fabrication assembly, individual Tx Rx as well combined Tx-Rx link were tested using CW signals. Then realtime data transport over carried out different modulation formats bandwidths. With 16QAM 750 MHz channel 2.66 Gbit/s rate...
A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated exhibits up to 231GHz, this being the highest known frequency at which has been measured for transistor configuration. design methodology based on simple equation accurately predicts value of feedback reactance required generate transistor. described potential application reflection amplifier...
Antenna and low-noise amplifier (LNA) co-design is a promising method for increasing the sensitivity of millimeter-wave (mmWave) receiver systems. Co-design involves several individual steps which usually do not intersect with each other in one design flow, but this combines all them together allows to obtain mutual benefits components. This paper gives an overview different mmWave engineering tasks like antennas monolithic microwave integrated circuit (MMIC) RF interconnection solutions...
A chip-to-waveguide transition for E-band that is entirely integrated in a two-layer printed circuit board (PCB) presented and demonstrated this paper. No separate waveguide back-short utilized. Its simple structure with the use of standard etching process makes it suitable as low-cost solution volume production. Transition variants 71 to 76 GHz 81 86 GHz, which are designated frequency bands fixed telecommunication services, have been fabricated characterized. The targeting demonstrates an...