A new integration concept for terahertz (THz) systems is presented in this article, wherein patterned silicon-oninsulator wafers form all DC, IF, and RF networks a homogeneous medium, contrast to existing solutions. Using concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) monolithic microwave integrated circuits (MMICs) the first time. All features of platform lie waveguide's H-plane. Heterogeneous SiGe chips achieved using novel in-line H-plane transition....

Ahstract- This manuscript presents results of wireless realtime data transmission at 143 GHz. The transmitter/receiver (TxlRx) front-end circuitry is integrated on a single monolithic microwave circuits (MMICs), realized in 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Tx module shows gain 12 dB GHz with output power -2.3 dBm 1 compression. Rx has 15 noise figure (NF) 13 minimum NF 10 measured 132 TxlRx modules were two radio units to demonstrate...

This letter presents a novel interconnect for coupling millimeter-wave (mmW) signals from integrated circuits to air-filled waveguides. The proposed solution is realized through slot antenna implemented in embedded wafer level ball grid array (eWLB) process. radiates into high-resistivity (HR) silicon taper perpendicular its plane, which turn an waveguide. achieves measured average insertion loss of 3.4 dB over the frequency range 116-151 GHz. generic and does not require any galvanic...

This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to quarter-wavelength cavity, which in turn either waveguide (WG) or another chip. solution also uses periodic electromagnetic bandgap (EBG) controls wave prevents field leakage undesired directions. is fabricated demonstrated at D-band (110-170 GHz), measurement results show it achieves minimum...

This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in fully receiver (Rx) module at the D-band (110-170 GHz). The solution consists of an MMIC-to-waveguide transition realized using on-chip probe mounted E-plane split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from probe. transition's performance experimentally verified back-to-back test chip,...

This paper presents a novel D-band interconnect implemented in low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through slot antenna directly radiating to standard air filled waveguide. achieves low insertion loss and relatively wide bandwidth. measured average 3 dB across bandwidth of 22% covering the frequency range 110138 GHz. return -10 same range. Adopting eWLB process waveguides makes an attractive solution for...

This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The operate at D-band (110-170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. rely on implementing radiating structures technology's redistribution layers instead using conventional arrays for transmission RF signal to/from package. interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic...

This paper presents a 140 GHz transmitter chipset realized in 130 nm SiGe BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> values of 250 GHzI 370 GHz. design comprises frequency sixtupler, balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The multiplier operates wide band from 110-147 GHz, while the between 115-155 total DC power...

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and package is non-galvanic realized silicon micromachining technique. After successful fabrication assembly, individual Tx Rx as well combined Tx-Rx link were tested using CW signals. Then realtime data transport over carried out different modulation formats bandwidths. With 16QAM 750 MHz channel 2.66 Gbit/s rate...

This work presents a waveguide transition based on slot radiator implemented liquid crystal polymer (LCP) substrate. The couples the RF signal to D-band (110-170 GHz) perpendicular its plane. is fed using microstrip line and can be bonded any monolithic microwave integrated circuit (MMIC). A split-block that utilizes bed of nails structure also presented. used stop undesired radiation at interface between opening allowing better coupling by reducing loss. shows minimum insertion loss 2.1 dB...

This paper presents a D-band interconnect realized using unilateral finline structure. The consists of microstrip line implemented on 75μm-thick SiC substrate. then couples to taper that is mounted in the E-plane standard WR-6.5 waveguide. achieves low insertion loss and covers very wide frequency range. measured minimum 0.67 dB maximum 2 per transition across entire covering range 110-170 GHz. does not require any galvanic contacts nor special processing can be commercially available...

In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The implemented a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of air-filled D-band waveguide. shows maximum insertion loss 1 dB across frequency range 110-170 GHz. average return -15 minimum -9 dB. structure occupies area 0.82×0.6 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized Linearly Tapered Slot (LTS) implemented in commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. LTS mounted the E-plane of split-block module and fed through microstrip line. experimentally verified back-to-back test structure it exhibits an average insertion loss 1.7 dB over frequency range extending from 100 to 135 GHz....

This Letter presents a non‐galvanic D‐band (110–170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The consists of patch‐radiator‐based waveguide transition implemented using one the technology's redistribution layers. patch radiates to WR‐6.5 standard perpendicular its plane. An electromagnetic band‐gap structure by metal patches is used suppress undesired modes and improve performance transition. proposed solution experimentally verified,...

This work presents an on-chip packaging concept suitable for monolithic microwave integrated circuits (MMIC) operating above 100 GHz. The relies on using transition that couples the signal to a standard air-filled waveguide. proposed solution utilizes electromagnetic band-gap (EBG) structure realized bed of nails prevent propagation parallel plate modes and improve coupling between MMIC technique shows average insertion loss only 0.6 dB across frequency range 110 - 155 Moreover, is...

This paper presents the design and characterisation of a two G-band (140 - 220 GHz) fundamental mixers. The mixers are implemented in 130-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. First, passive balanced topology was investigated using diode ring with RF LO ports. mixer operates both upconversion downconversion modes. In order to reduce power requirement on local oscillator (LO) at G-band, diodes were dc biased. Measurement results show that has an...

An electromagnetic bandgap (EBG) structure is implemented on a printed-circuit board (PCB) as gasket between waveguide flanges. The proposed can reduce leakage flanges due to misalignment. A WR-6.5 proof-of-concept demonstration presented in this paper covering 110 - 170 GHz with return loss lower than 12 dB and over 75 um of air gap the

Abstract In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The implemented a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of air-filled D-band waveguide. shows maximum insertion loss 1 dB across frequency range 110–170 GHz. average return −15 minimum −9 dB. structure occupies area 0.82×0.6 mm2. provides low-loss wide-band connectivity for...

Abstract This paper reports on a record-low-phase noise D -band signal source with 5 dBm output power, and 1.3 GHz tuning range. The is based the unconventional combination of fundamental frequency 23 oscillator in 150 nm AlGaN/GaN HEMT technology followed by 130 SiGe BiCMOS MMIC including sixtupler an amplifier. amplifier operates compression mode as power-limiting amplifier, to equalize power so that it nearly independent oscillator's gate drain bias voltages used for source. choice using...

A D-band (110 similar to 170 GHz) transmitter module, based on a novel self-aligned microstrip-to-waveguide transition, was demonstrated. The simulated average insertion loss of the transition is about 0.6 dB and return better than 10 during working band. module developed using such with resistive mixer multiplier chips. operates between 110 153 GHz provides peak saturated output power -4.6 dBm at 150 13.5 3 bandwidth from 145.8 159.3 GHz. Gb/s wireless communication this 145 demonstrated...