A5071729948- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Graphene research and applications
- Integrated Circuits and Semiconductor Failure Analysis
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Radio Frequency Integrated Circuit Design
- 3D IC and TSV technologies
- Molecular Junctions and Nanostructures
- Plasmonic and Surface Plasmon Research
- Perovskite Materials and Applications
- Semiconductor Lasers and Optical Devices
- Magnetic properties of thin films
- Silicon and Solar Cell Technologies
- Ferroelectric and Piezoelectric Materials
- Analytical Chemistry and Sensors
- Gas Sensing Nanomaterials and Sensors
University of Minnesota
2016-2025
Twin Cities Orthopedics
2011-2025
Eindhoven University of Technology
2024
Agnitron Technology (United States)
2022
University of Minnesota System
2013-2020
University of California, Santa Barbara
1993-2014
IBM Research - Thomas J. Watson Research Center
2002-2014
University of Udine
2014
The University of Texas at Dallas
2014
Argonne National Laboratory
2014
We present a comprehensive study of the band alignments two-dimensional (2D) semiconducting materials and highlight possibilities forming momentum-matched type I, II, III heterostructures, an enticing possibility being atomic heterostructures where constituent monolayers have edges at zone center, i.e., $\mathrm{\ensuremath{\Gamma}}$ valley. Our study, which includes group IV III-V compound monolayer materials, V elemental transition-metal dichalcogenides, trichalcogenides, reveals that...
Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration new physical phenomena. However, theoretical investigations photoemission spectroscopy experiments indicate that in few-layer form, an exceedingly large electric field order several volts per nanometre required to effectively tune bandgap, making direct electrical unfeasible. Here we reveal unique thickness-dependent...
Graphene's unique optoelectronic properties have been exploited for many photonic applications. Here, we demonstrate a single graphene-based device that simultaneously provides efficient optical modulation and photodetection. The graphene is integrated on silicon waveguide tunable with gate to achieve near-infrared photodetection responsivity of 57 mA/W depth 64% GHz bandwidth. Simultaneous photocurrent transmission has achieved, which may lead unprecedented
Background. The authors evaluated the effects of taxol, a microtubular inhibitor, as possible radiation sensitizer on human leukemic cell line (HL-60). Taxol acts mitotic blocking cells in G2M-phase cycle. differential sensitivity various phases cycle has been well recognized. This study was focused interaction between and regard to its ability synchronize at and, thereby, enhance cells. Methods. HL-60 were exposed 3 × 10−8 M concentrations taxol for 1 hour 37°CCfollowed by reculturing 24...
To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon circuits and precise measurement the absorption coefficient a graphene/waveguide hybrid structure. A method based Mach-Zehnder interferometry is employed achieve high precision consistency, yielding maximal value 0.2 dB/μm when located directly top waveguide. The averaged results obtained from...
After decades of continuous scaling, further advancement silicon microelectronics across the entire spectrum computing applications is today limited by power dissipation. While trade-off between and performance well-recognized, most recent studies focus on extreme ends this balance. By concentrating instead an intermediate range, ~ 8× improvement in efficiency can be attained without system loss parallelizable applications-those which such critical. It argued that power-efficient hardware...
An overview of wafer-level three-dimensional (3D) integration technology is provided. The basic reasoning for pursuing 3D presented, followed by a description the possible process variations and schemes, as well elements needed to implement integrated circuits. Detailed descriptions two schemes implemented at IBM are given, challenges bringing into production environment discussed.
Tunneling field-effect transistors (TFETs) have gained a great deal of interest recently due to their potential reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieve high drive currents, which is prerequisite high-performance operation. In this paper, we explore the performance 1-D TFET with broken-gap heterojunction source injector using dissipative quantum transport simulations based on nonequilibrium Green's function formalism, as well...
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of silicon-on-insulator waveguide which two graphene layers reside, separated by thin insulating region. lower acts as tunable absorber, while the upper functions transparent gate electrode. Calculations realistic material properties show that 3-dB bandwidths over 100 GHz (30 GHz) are possible at near- (\lambda=1.55 \mu m) and mid- (\lambda=3.5\mu infrared bands. effect...
As the end draws near for Moore's law, search low-power alternatives to complementary metal-oxide-semiconductor (CMOS) technology is intensifying. Among various post-CMOS candidates, spintronic devices have gained special attention their potential overcome power and performance limitations of CMOS. In particular, all spin logic (ASL) technology, which performs Boolean operations transfers output in domain, has been proposed enabling new capabilities-such as high density, low device count,...
The fabrication of in-plane 2H-1T' MoTe2 homojunctions by the flux-controlled, phase-engineering few-layer from Mo nanoislands is reported. phase controlled simply changing Te atomic flux temperature reaction vessel. Few-layer 2H formed with high flux, while 1T' obtained low flux. With medium are synthesized. As-synthesized characterized Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy mapping confirm that have abrupt interfaces between domains,...
SnSe2 field-effect transistors fabricated using mechanical exfoliation are reported. Substrate-gated devices with source-to-drain spacing of 0.5 μm have been drive current 160 μA/μm at T = 300 K. The transconductance a drain-to-source voltage Vds 2 V increases from 0.94 μS/μm K to 4.0 4.4 K, while the mobility 8.6 cm2/Vs 28 77 conductance 50 mV shows an activation energy only 5.5 meV, indicating absence significant Schottky barrier source and drain contacts.
Microfluidic devices fabricated via soft lithography have demonstrated compelling applications such as lab-on-a-chip diagnostics, DNA microarrays, and cell-based assays. These technologies could be further developed by directly integrating microfluidics with electronic sensors curvilinear substrates well improved automation for higher throughput. Current additive manufacturing methods, stereolithography multi-jet printing, tend to contaminate uncured resins or supporting materials during...
The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue TMDC-based field effect transistors (FETs). A hexagonal (2H) molybdenum ditelluride (MoTe2) phase, monoclinic (1T') MoTe2 their lateral homojunctions selectively synthesized situ by chemical vapor deposition due small free energy difference between two phases. Here, we have investigated, detail, structural electrical properties...
Rapid detection of volatile organic compounds (VOCs) is growing in importance many sectors. Noninvasive medical diagnoses may be based upon particular combinations VOCs human breath; detecting emitted from environmental hazards such as fungal growth could prevent illness; and waste reduced through monitoring gases produced during food storage. Electronic noses have been applied to problems, however, a common limitation improving selectivity. Graphene an adaptable material that can...
The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities creating artificially assembled heterostructures with structurally and chemically incompatible materials. sacrificial layer method is a promising approach exfoliate as-grown films from compatible material system, allowing their integration dissimilar Nonetheless, the conventional layers often possess an intricate stoichiometry, thereby constraining practicality adaptability, particularly when...
We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength 850 nm, 10 ×10-μm detectors with finger spacing S 0.4 μm (0.6 μm) produced a -3-dB bandwidth 29 GHz (27 GHz) at bias voltage -1 V. The S=0.6 had external quantum efficiency 34% nm 46% 900 dark current 0.02 μA -1-V bias.
A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron hole mobility enhancements demonstrated structures with no SiGe present under channel.
An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented. The properties Ge SiGe alloys described a review previous research SOI detectors is provided as motivation the Ge-on-SOI detector approach. photodetector design described, which consists lateral alternating p- n-type surface contacts an epitaxial absorbing layer grown ultrathin-SOI substrate. When operated...
Performance enhancements in strained Si NMOSFETs were demonstrated at L/sub eff/<70 nm. A 70% increase electron mobility was observed vertical fields as high 1.5 MV/cm for the first time, suggesting a new enhancement mechanism addition to reduced phonon scattering. Current drive by /spl ges/35% These results indicate that strain can be used improve CMOS device performance sub-100 nm technology nodes.
Current drive enhancements were demonstrated in the strained-Si PMOSFETs with sub-100 nm physical gate lengths for first time, as well NMOSFETs well-controlled threshold voltage V/sub T/ and overlap capacitance C/sub OV/ characteristics L/sub poly/ eff/ below 80 60 nm. A 110% enhancement electron mobility was observed strained Si devices 1.2% tensile strain (28% Ge content relaxed SiGe buffer), along a 45% increase peak hole mobility.