A5100600103- Transition Metal Oxide Nanomaterials
- Conducting polymers and applications
- Graphene research and applications
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Advanced Sensor and Energy Harvesting Materials
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Thermal Radiation and Cooling Technologies
- Organic Electronics and Photovoltaics
- Photonic and Optical Devices
- Ga2O3 and related materials
- Metamaterials and Metasurfaces Applications
- Supercapacitor Materials and Fabrication
- Neuroscience and Neural Engineering
- MXene and MAX Phase Materials
- Advanced Optical Sensing Technologies
- Quantum and electron transport phenomena
- CCD and CMOS Imaging Sensors
- Ferroelectric and Negative Capacitance Devices
- Gas Sensing Nanomaterials and Sensors
- Advancements in Battery Materials
- Photonic Crystals and Applications
- Fluid Dynamics and Turbulent Flows
National University of Singapore
2022-2025
Nanyang Technological University
2024-2025
University of Jinan
2024-2025
Civil Aviation Flight University of China
2022-2025
Chongqing Institute of Green and Intelligent Technology
2017-2024
Affiliated Hospital of Southwest Medical University
2024
San Francisco State University
2023
Xihua University
2023
University of Electronic Science and Technology of China
2018-2022
Hong Kong Polytechnic University
2015-2022
Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for photonic applications due to its moderate bandgap, high carrier mobility, and compatibility with diverse range of substrates. Photodetectors are probably most explored BP devices, however, their unique potential compared other layered materials in mid-infrared wavelength not been revealed. Here, we demonstrate detectors at 3.39 μm internal gain, resulting an external responsivity 82...
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics infrared optoelectronics. Layered BP offers moderate bandgap around 0.3 eV carrier mobility, leading to transistors with decent on-off ratio on-state current density. Here, we demonstrate the gigahertz frequency operation field-effect first time. The demonstrated here show excellent saturation an exceeding 2000. We achieved density...
Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration new physical phenomena. However, theoretical investigations photoemission spectroscopy experiments indicate that in few-layer form, an exceedingly large electric field order several volts per nanometre required to effectively tune bandgap, making direct electrical unfeasible. Here we reveal unique thickness-dependent...
The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the is built-in potential at interface, which controls separation harvesting photogenerated carriers. So far, primary efforts designing rely on discovering different materials developing multilayer structures, may raise problems compatibility standard semiconductor production line. Here, we report an enhanced monolayer...
Abstract High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high have consistently encountered challenges in integration operational complexity. Meanwhile, two-dimensional (2D) semimetal unique zero-bandgap structures constrained by bottleneck intrinsic efficiency. Here, we report a near-mid ultra-miniaturized graphene photodetector configurable 2D potential well. The well constructed dielectric can...
Nonvolatile charge-trap memory plays an important role in many modern electronics technologies, from portable electronic systems to large-scale data centers. Conventional devices typically work with fixed channel carrier polarity and device characteristics. However, emerging applications reconfigurable neuromorphic computing require dynamically tunable properties their components that can lead enhanced circuit versatility system functionalities. Here, we demonstrate ambipolar black...
Electronic bipolar resistance switching (eBRS) in an Al/TiOx/Al structure, where the TiOx layer was reactively sputter-deposited, examined conjunction with a structural analysis using transmission electron microscopy. A thin (3–5 nm) insulating Al(Ti)Ox formed at bottom Al electrode interface, which provided necessary asymmetric potential barrier for eBRS to emerge, whereas top interface appeared have fluent carrier (electron) injection. The set and reset were related trapping detrapping of...
High-performance transparent and flexible triboelectric nanogenerators (TENGs) based on graphene composite electrodes via surface engineering are proposed demonstrated. Through modifying the CVD-grown with conductive polymer poly(3,4-ethylenedioxy-thiophene):polystyrenesulfonate (PEDOT:PSS), excellent optoelectronic performances were fabricated, which exhibited a high transmittance up to 83.5% sheet resistance of 85 Ω/□, decreasing from initial value 725 Ω/□. As consequence, output current...
Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as key enabling components in miniaturized system for weak signal detection. To date, high photogain devices greatly limited by a large bias voltage, low-temperature refrigeration, narrow response band, and complex fabrication processes. Here, we demonstrate detectors working SWIR region at room temperature, which use graphene charge...
Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to inherently either unipolar or ambipolar in its response. However, conventionally, once a has been fabricated, polarity cannot changed. Herein, polarity-tunable based on graphene/ultrathin Al2O3/Si structure is demonstrated. Light modulate the gating effect of device change transfer characteristic curve from...
In a normal electrochemical metallization (ECM) switch, electrochemically active metals, such as Ag and Cu are used to provide mobile ions for the conducting filament. both ECM valence change memory (VCM) devices, platinum group Pt Pd, typically counter electrode assumed be chemically physically inert. this study, we explore whether so-called inert metal itself can form filament result in repeatable resistance switching. Pd different oxide host matrices purpose. We have observed that...
Abstract SiO 2 is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where defective played an active role as (RS) layer. In this report, bias-polarity-dependent RS behaviours top electrode W-sputtered -bottom Pt (W/SiO /Pt) structure were examined based on current-voltage (I-V) sweep. When memory cell electroformed with a negative bias applied W electrode, showed typical electronic...
Abstract The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, responsivity (or gain) was increased at expense response time. In this paper, we devise a mechanism which can obtain an enhanced and fast time simultaneously by manipulating (MPE). This concept is demonstrated using graphene/silicon-on-insulator (GSOI) structure. An more than 10 7 A/W 90 µs were...
The detrimental effects of burnout on the mental well-being and professional efficacy college counselors underscore importance exploring factors mitigating this phenomenon. We conducted a cross-sectional survey 406 Chinese to investigate relationships between calling, role identity, burnout, seeking elucidate underlying mechanisms in population. Structural equation modeling analysis revealed negative association calling with identity serving as pivotal mediator relationship. By integrating...
We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The exhibited repeatable resistive switching behavior with low programming voltages (as as 0.5 V) and high ON/OFF conductance ratio. Devices active metals top electrodes were bipolar switches, while those inert metal unipolar. also studied the mechanisms for both types of filament formation rupture, proposed conduction models Pt/SiOx/Si devices.
Low specific capacitances and/or limited working potential (≤4.5 V). of the prevalent carbon‐based positive electrodes as inborn bottleneck seriously hinder practical advancement lithium‐ion capacitors. Thus, breakthroughs in enhancement both and upper cutoff potentials are enormously significant for high‐energy density Herein, we first meticulously design scalably fabricate a commercializable fluorine‐doped porous carbon material with competitive tap density, large active surface,...
Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The (RS) in this material is induced by repeated formation and rupture of conducting filaments (CFs) oxide layer, which are accompanied almost inevitable randomness parameters. In work, a 1 to 2 nm-thick Ti layer was deposited on 10 RS greatly improved performances, including much-improved uniformity. metal naturally oxidized TiOx (x < 2) played role series resistor, whose value comparable...
Flexible electrochromic devices (FECDs) have been regarded as an ideal stratagem for wearable displays. However, it remains a great challenge to achieve long-term stability high-performance FECDs due their severe electrolyte deformation/leakage under repeated bending. Herein, inspired by the rough and fluffy microstructure of cobwebs, we prepared porous polylactic acid (PLA) network through electrospinning nonsolvent-induced phase separation. This loosely interlaced PLA can be well...